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5961-01-181-9787
20 Products
1090391P1
TRANSISTOR
NSN, MFG P/N
5961011819787
NSN
5961-01-181-9787
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 94117
MFR SOURCE CONTROLLING REFERENCE: 1090391P1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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648Z1257-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820038
NSN
5961-01-182-0038
648Z1257-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820038
NSN
5961-01-182-0038
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
MAJOR COMPONENTS: PRINTED WIRING BD 1,DIODES 6
Related Searches:
648Z1257-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820039
NSN
5961-01-182-0039
648Z1257-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820039
NSN
5961-01-182-0039
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
MAJOR COMPONENTS: PRINTED WIRING BD 1; DIODES 4
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734585
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820040
NSN
5961-01-182-0040
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
MAJOR COMPONENTS: PRINTED WIRING BD 1; TRANSISTORS 4; HEATSINK 1; BRACKET 1
Related Searches:
458-54714-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820041
NSN
5961-01-182-0041
458-54714-2
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820041
NSN
5961-01-182-0041
MFG
THE BOEING COMPANY DBA BOEING
Description
III END ITEM IDENTIFICATION: KC-135 AIRCRAFT
MAJOR COMPONENTS: DIODE 2; CIRCUIT BOARD 1; TERMINALS 6
Related Searches:
741C5040-37-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820197
NSN
5961-01-182-0197
741C5040-37-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820197
NSN
5961-01-182-0197
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION DIV INFORMATION SYSTEMS - GERMANTOWN
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 215.0 GRAMS
III END ITEM IDENTIFICATION: MODEL F-14 ACFT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C5040-37-020
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON CARBIDE
SPEC/STD CONTROLLING DATA:
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VZ1626
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820197
NSN
5961-01-182-0197
MFG
MICRO USPD INC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 215.0 GRAMS
III END ITEM IDENTIFICATION: MODEL F-14 ACFT
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 86360
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 741C5040-37-020
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON CARBIDE
SPEC/STD CONTROLLING DATA:
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MJ12010
TRANSISTOR
NSN, MFG P/N
5961011820704
NSN
5961-01-182-0704
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
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03-02878-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820707
NSN
5961-01-182-0707
03-02878-001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961011820707
NSN
5961-01-182-0707
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MAJOR COMPONENTS: DIODE 2,MOUNTING BLOCK 1
Related Searches:
3005829-03
TRANSISTOR
NSN, MFG P/N
5961011820811
NSN
5961-01-182-0811
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.425 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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67753
TRANSISTOR
NSN, MFG P/N
5961011820811
NSN
5961-01-182-0811
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.425 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SJ437
TRANSISTOR
NSN, MFG P/N
5961011820811
NSN
5961-01-182-0811
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.425 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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STC9094
TRANSISTOR
NSN, MFG P/N
5961011820811
NSN
5961-01-182-0811
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
OVERALL HEIGHT: 0.425 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 115.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.440 INCHES NOMINAL
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 70.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 100.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 7.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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2N5337
TRANSISTOR
NSN, MFG P/N
5961011820813
NSN
5961-01-182-0813
MFG
SEMITRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5806 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 240.0 MAXIMU
Related Searches:
RELEASE5806
TRANSISTOR
NSN, MFG P/N
5961011820813
NSN
5961-01-182-0813
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 1.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-39
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 6.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE5806 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.210 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 240.0 MAXIMU
Related Searches:
JAN2N3019S
TRANSISTOR
NSN, MFG P/N
5961011820814
NSN
5961-01-182-0814
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN2N3019S
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/391
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/391 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-PRF-19500
Related Searches:
0N275264
TRANSISTOR
NSN, MFG P/N
5961011820816
NSN
5961-01-182-0816
MFG
NATIONAL SECURITY AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
2N4014
TRANSISTOR
NSN, MFG P/N
5961011820816
NSN
5961-01-182-0816
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STA
Related Searches:
1N3293A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820818
NSN
5961-01-182-0818
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.270 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4796 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
R5100610XXWA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820818
NSN
5961-01-182-0818
R5100610XXWA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011820818
NSN
5961-01-182-0818
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL LENGTH: 5.270 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.227 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE4796 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
