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5961-01-198-1907
20 Products
12272495
TRANSISTOR
NSN, MFG P/N
5961011981907
NSN
5961-01-198-1907
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272495
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.095 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.408 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.273 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 KNIFE BLADE
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPE
Related Searches:
935A927-1
TRANSISTOR
NSN, MFG P/N
5961011979478
NSN
5961-01-197-9478
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM SOURCE CURRENT AND 15.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6770
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/543
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/ST
Related Searches:
JANTXV2N6770
TRANSISTOR
NSN, MFG P/N
5961011979478
NSN
5961-01-197-9478
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM SOURCE CURRENT AND 15.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6770
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: DISCRIMINATOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/543
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/ST
Related Searches:
17605
TRANSISTOR
NSN, MFG P/N
5961011979479
NSN
5961-01-197-9479
MFG
SHUGART ASSOCIATES SUB OF XEROX CORP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNTHREADED HOLE AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO,
Related Searches:
2N4231A
TRANSISTOR
NSN, MFG P/N
5961011979479
NSN
5961-01-197-9479
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, RMS VALUE OF ALTERNATION COMPONENT AND 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 UNTHREADED HOLE AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO,
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353-9016-900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979481
NSN
5961-01-197-9481
353-9016-900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979481
NSN
5961-01-197-9481
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6047A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S
Related Searches:
JANTX1N6047A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979481
NSN
5961-01-197-9481
JANTX1N6047A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979481
NSN
5961-01-197-9481
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6047A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S
Related Searches:
JANTXV1N6304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979482
NSN
5961-01-197-9482
JANTXV1N6304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979482
NSN
5961-01-197-9482
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6304
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/550
OVERALL LENGTH: 1.000 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.688 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/550 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 81349-MIL-S-1
Related Searches:
JANTXV1N5623
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979483
NSN
5961-01-197-9483
JANTXV1N5623
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979483
NSN
5961-01-197-9483
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N5623
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/429
OVERALL DIAMETER: 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/429 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM
Related Searches:
84001005-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979658
NSN
5961-01-197-9658
84001005-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979658
NSN
5961-01-197-9658
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX2N5012
TRANSISTOR
NSN, MFG P/N
5961011979725
NSN
5961-01-197-9725
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-TR24 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 700.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
STA6215
TRANSISTOR
NSN, MFG P/N
5961011979725
NSN
5961-01-197-9725
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-TR24 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 700.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
TR24-03A
TRANSISTOR
NSN, MFG P/N
5961011979725
NSN
5961-01-197-9725
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-TR24 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 700.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS
Related Searches:
1N849
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979726
NSN
5961-01-197-9726
MFG
L-3 COMMUNICATIONS AVIONICS SYSTEMS INC
Description
OVERALL HEIGHT: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 1.265 INCHES MAXIMUM
OVERALL WIDTH: 0.105 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
JANIN849
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979726
NSN
5961-01-197-9726
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
OVERALL HEIGHT: 0.265 INCHES MAXIMUM
OVERALL LENGTH: 1.265 INCHES MAXIMUM
OVERALL WIDTH: 0.105 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
5942993
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011979888
NSN
5961-01-197-9888
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1035029-1
TRANSISTOR
NSN, MFG P/N
5961011980089
NSN
5961-01-198-0089
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 1035029-1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.095 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEE
Related Searches:
1036810-1
TRANSISTOR
NSN, MFG P/N
5961011980089
NSN
5961-01-198-0089
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 1035029-1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.095 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEE
Related Searches:
MJE8501
TRANSISTOR
NSN, MFG P/N
5961011980089
NSN
5961-01-198-0089
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 2.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 2.00 AMPERES MAXIMUM BASE CURRENT, DC
DESIGN CONTROL REFERENCE: 1035029-1
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
OVERALL LENGTH: 1.095 INCHES MINIMUM AND 1.182 INCHES MAXIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 65.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED AND 1400.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEE
Related Searches:
SCA14922
TRANSISTOR
NSN, MFG P/N
5961011981907
NSN
5961-01-198-1907
MFG
SEMICOA DBA SEMICOA SEMI CONDUCTORS
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: RADIATION HARDENED
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12272495
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.095 INCHES NOMINAL
OVERALL WIDTH ACROSS FLATS: 0.408 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.273 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 KNIFE BLADE
THREAD QUANTITY PER INCH: 32
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE, WITH BASE SHORT-CIRCUITED TO EMITTER AND 80.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPE
