My Quote Request
No products added yet
5961-01-210-9920
20 Products
10176149-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
10176149-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2982RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.505 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB,
Related Searches:
1N2982RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2982RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.505 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB,
Related Searches:
JAN1N2982RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
JAN1N2982RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2982RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.505 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB,
Related Searches:
JANTX1N2982RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
JANTX1N2982RB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109920
NSN
5961-01-210-9920
MFG
JOINT ARMY-NAVY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N2982RB
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/124
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.505 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/124 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB,
Related Searches:
JANTXV1N974B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109921
NSN
5961-01-210-9921
JANTXV1N974B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012109921
NSN
5961-01-210-9921
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.40 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N974B
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: VOLTAGE REGULATOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/117
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3
Related Searches:
655-1004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
655-1004
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
MFG
MICRO USPD INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, CARRIER BASED ASW, SH-60F; AIRCRAFT, PROWLER EA-6B; HELICOPTER, LAMPS MARK III, SH-60B
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
900556-052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
900556-052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
MFG
KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, CARRIER BASED ASW, SH-60F; AIRCRAFT, PROWLER EA-6B; HELICOPTER, LAMPS MARK III, SH-60B
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
SDA803B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
SDA803B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012109961
NSN
5961-01-210-9961
MFG
SOLID STATE DEVICES INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: HELICOPTER, CARRIER BASED ASW, SH-60F; AIRCRAFT, PROWLER EA-6B; HELICOPTER, LAMPS MARK III, SH-60B
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
Related Searches:
15903 PIECE 11
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012109984
NSN
5961-01-210-9984
15903 PIECE 11
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012109984
NSN
5961-01-210-9984
MFG
MCNAB INCORPORATED
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
JAN1N4246
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012109984
NSN
5961-01-210-9984
JAN1N4246
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012109984
NSN
5961-01-210-9984
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
352-1192-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012110007
NSN
5961-01-211-0007
352-1192-010
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012110007
NSN
5961-01-211-0007
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
CD4519-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012110007
NSN
5961-01-211-0007
MFG
VARIAN ASSOCIATES INC COMMUNICATIONS TRANSISTOR DIV
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
SRF3023P
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961012110007
NSN
5961-01-211-0007
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE SET
Related Searches:
11436751-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012110048
NSN
5961-01-211-0048
11436751-1
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012110048
NSN
5961-01-211-0048
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 11436751-1
MANUFACTURERS CODE: 18876
SPECIAL FEATURES: SINGLE PHASE,FULL WAVE BRIDGE;SILICON;INDIVIDUAL DIODES SHALL BE HERMETICALLY SEALSED;OPERATING TEMP M65 TO P175 DEG CELSIUS;4 LEAD TERMINALS 1.250 IN. LG;0.032 IN. DIA;0.688 IN. LG BODY
THE MANUFACTURERS DATA:
Related Searches:
676-18
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012110048
NSN
5961-01-211-0048
676-18
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012110048
NSN
5961-01-211-0048
MFG
AMOCO CONTAINER CO
Description
DESIGN CONTROL REFERENCE: 11436751-1
MANUFACTURERS CODE: 18876
SPECIAL FEATURES: SINGLE PHASE,FULL WAVE BRIDGE;SILICON;INDIVIDUAL DIODES SHALL BE HERMETICALLY SEALSED;OPERATING TEMP M65 TO P175 DEG CELSIUS;4 LEAD TERMINALS 1.250 IN. LG;0.032 IN. DIA;0.688 IN. LG BODY
THE MANUFACTURERS DATA:
Related Searches:
619906-910
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012110155
NSN
5961-01-211-0155
619906-910
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012110155
NSN
5961-01-211-0155
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: AN/VRC-83
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2VRC83-3; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 37695-619906 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4P515
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012110155
NSN
5961-01-211-0155
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
III END ITEM IDENTIFICATION: AN/VRC-83
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.119 INCHES MINIMUM AND 0.127 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: T.O. 31R2-2VRC83-3; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 37695-619906 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
033469-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112004
NSN
5961-01-211-2004
MFG
SIMMONDS PRECISION PRODUCTS INC. DBA GOODRICH SENSORS AND INTERGRATED SYSTMES
Description
III END ITEM IDENTIFICATION: B1B AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 033469-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
UDZ709
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012112004
NSN
5961-01-211-2004
MFG
MICRO USPD INC
Description
III END ITEM IDENTIFICATION: B1B AIRCRAFT
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 89305
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 033469-1
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.450 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
655-497
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
655-497
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012112307
NSN
5961-01-211-2307
MFG
MICRO USPD INC
Description
(NON-CORE DATA) TEST DATA DOCUMENT: 08748-DA01 DRAWING
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES FORWARD CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MANUFACTURERS CODE: 08748
MATERIAL: SILICON
MFR SOURCE CONTROLLING REFERENCE: DA01-03
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.800 INCHES MAXIMUM
OVERALL LENGTH: 2.250 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 5 QUICK DISCONNECT, MALE
