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5961-01-238-2344
20 Products
S18C10A1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012382344
NSN
5961-01-238-2344
MFG
CHARLES STARK DRAPER LABORATORY INC THE DBA DRAPER LABORATORY DIV HEADQUARTERS
Description
CURRENT RATING PER CHARACTERISTIC: 165.00 AMPERES NOMINAL ON-STATE CURRENT, PEAK AND 10.50 AMPERES NOMINAL REVERSE CURRENT, PEAK
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 7.677 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE AND 700.0 NOMINAL NONREPETITIVE PEAK REVERSE VOLTAGE AND 5.0 NOMINAL PEAK GATE VOLTAGE AND 1.3 NOMINAL ON-STATE VOLTAGE, PEAK
Related Searches:
6081-1032
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012382915
NSN
5961-01-238-2915
6081-1032
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012382915
NSN
5961-01-238-2915
MFG
GENRAD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES FORWARD CURRENT, AVERAGE AND 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
KBPC10-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012382915
NSN
5961-01-238-2915
KBPC10-02
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012382915
NSN
5961-01-238-2915
MFG
GENERAL SEMICONDUCTOR INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES FORWARD CURRENT, AVERAGE AND 200.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -50.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.130 INCHES MAXIMUM
OVERALL WIDTH: 1.130 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 4 QUICK DISCONNECT, MALE
Related Searches:
1854-0079
TRANSISTOR
NSN, MFG P/N
5961012384134
NSN
5961-01-238-4134
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 160.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
2N3439
TRANSISTOR
NSN, MFG P/N
5961012384134
NSN
5961-01-238-4134
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 160.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
480-009-3439
TRANSISTOR
NSN, MFG P/N
5961012384134
NSN
5961-01-238-4134
MFG
AYDIN DISPLAYS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 160.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
S44238
TRANSISTOR
NSN, MFG P/N
5961012384134
NSN
5961-01-238-4134
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 160.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
118475-017
TRANSISTOR
NSN, MFG P/N
5961012384725
NSN
5961-01-238-4725
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SPECIAL FEATURES: CONSISTS OF ONE CJ0114-004 SOCKETCMPNT,ONE CV0414-002 MOUNTING PAD ANDONE JANTXV2N30195 TRANSISTOR
Related Searches:
118485-010
TRANSISTOR
NSN, MFG P/N
5961012384726
NSN
5961-01-238-4726
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SPECIAL FEATURES: CONSISTS OF ONE CJ0114-002 SOCKETCMPNT,ONE CV0414-002 MOUNTING PAD ANDONE JANTXV2N2905A TRANSISTOR
Related Searches:
118485-017
TRANSISTOR
NSN, MFG P/N
5961012384727
NSN
5961-01-238-4727
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
III END ITEM IDENTIFICATION: PEACEKEEPER IMU
SPECIAL FEATURES: CONSISTS OF ONE CJ0114-002 SOCKETCMPNT,ONE CV0414-002 MOUNTING PAD ANDONE JANTXV2N30195 TRANSISTOR
Related Searches:
1N5633A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384728
NSN
5961-01-238-4728
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-101
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS/HARDNESS CRITICAL ITEM
Related Searches:
280-20045-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384728
NSN
5961-01-238-4728
280-20045-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384728
NSN
5961-01-238-4728
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-101
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS/HARDNESS CRITICAL ITEM
Related Searches:
GZ44710A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384728
NSN
5961-01-238-4728
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-101
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HARDNESS CRITICAL PROCESS/HARDNESS CRITICAL ITEM
Related Searches:
1N5647A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384729
NSN
5961-01-238-4729
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-103
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
280-20045-103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384729
NSN
5961-01-238-4729
280-20045-103
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384729
NSN
5961-01-238-4729
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-103
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GZ44605D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384729
NSN
5961-01-238-4729
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: ALCC PWR SUPPLY
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-20045-103
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.325 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: HCI
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 41.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
GCB-1301-AR-1
CONTROLLER,THYRISTO
NSN, MFG P/N
5961012384974
NSN
5961-01-238-4974
MFG
DE LA RUE GIORI S.A.
Description
CONTROLLER,THYRISTO
Related Searches:
1N4007
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012384989
NSN
5961-01-238-4989
MFG
DE LA RUE GIORI S.A.
Description
III END ITEM IDENTIFICATION: NSN 2320-01-318-9902 HET (HEAVY EQUIPMENT TRANSPORTER); FAMILY OF HEMTT VEHICLES (HEAVY EXPANDED MOBILITY TACTICAL TRUCKS)
SPECIAL FEATURES: TM 9-2320-360-24P FIG 86
Related Searches:
2N6679
TRANSISTOR
NSN, MFG P/N
5961012385178
NSN
5961-01-238-5178
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
TRANSISTOR
Related Searches:
0N515464
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012385179
NSN
5961-01-238-5179
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE,DIODE
