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5961-01-248-9571
20 Products
P16201-4
TRANSISTOR
NSN, MFG P/N
5961012489571
NSN
5961-01-248-9571
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
P16201-2
TRANSISTOR
NSN, MFG P/N
5961012489572
NSN
5961-01-248-9572
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
P16201-1
TRANSISTOR
NSN, MFG P/N
5961012489573
NSN
5961-01-248-9573
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
TRANSISTOR
Related Searches:
P16072-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012489574
NSN
5961-01-248-9574
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
5924752-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012489586
NSN
5961-01-248-9586
5924752-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012489586
NSN
5961-01-248-9586
MFG
NAVAL SEA SYSTEMS COMMAND
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
VJ248X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012489586
NSN
5961-01-248-9586
VJ248X
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012489586
NSN
5961-01-248-9586
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
Related Searches:
KS3542
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012489623
NSN
5961-01-248-9623
MFG
MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-34
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 1.2 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
BC307C
TRANSISTOR
NSN, MFG P/N
5961012491023
NSN
5961-01-249-1023
MFG
MICRO ELECTRONICS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, RMS VALUE OF ALTERNATION COMPONENT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92A
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
IRF341
TRANSISTOR
NSN, MFG P/N
5961012491024
NSN
5961-01-249-1024
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 350.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
D29E9
TRANSISTOR
NSN, MFG P/N
5961012491025
NSN
5961-01-249-1025
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT
Description
CURRENT RATING PER CHARACTERISTIC: 750.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-98
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.205 INCHES MAXIMUM
OVERALL LENGTH: 0.265 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.105 INCHES MAXIMUM
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 60.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM CO
Related Searches:
3366408
TRANSISTOR
NSN, MFG P/N
5961012491026
NSN
5961-01-249-1026
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/ASB-19
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COLOR DOT INDICATES SUPPLY VOLTAGE SETTING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-3366408 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200
Related Searches:
JANTX2N3019
TRANSISTOR
NSN, MFG P/N
5961012491026
NSN
5961-01-249-1026
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 NANOAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AN/ASB-19
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: COLOR DOT INDICATES SUPPLY VOLTAGE SETTING; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 82577-3366408 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200
Related Searches:
104X125AB039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491027
NSN
5961-01-249-1027
104X125AB039
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491027
NSN
5961-01-249-1027
MFG
GENERAL ELECTRIC CO SPEED VARIATOR PRODUCTS OPERATION
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ14316
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491027
NSN
5961-01-249-1027
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
44-050649-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012491028
NSN
5961-01-249-1028
44-050649-02
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012491028
NSN
5961-01-249-1028
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
B-15000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012491028
NSN
5961-01-249-1028
B-15000
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012491028
NSN
5961-01-249-1028
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES PEAK FORWARD SURGE CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 REPETITIVE PEAK REVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: 8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.450 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
80-6794
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491029
NSN
5961-01-249-1029
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
548057
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491030
NSN
5961-01-249-1030
MFG
LITTON SYSTEMS INC. DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PRD3025
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491030
NSN
5961-01-249-1030
MFG
OPTEK TECHNOLOGY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
28701-5510-0006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491031
NSN
5961-01-249-1031
28701-5510-0006
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012491031
NSN
5961-01-249-1031
MFG
THALES OPTRONICS STAINES LTD
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-46
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.080 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
