My Quote Request
No products added yet
5961-01-249-5675
20 Products
1827894-1
TRANSISTOR
NSN, MFG P/N
5961012495675
NSN
5961-01-249-5675
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
TRANSISTOR
Related Searches:
T700103504BY
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492656
NSN
5961-01-249-2656
T700103504BY
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012492656
NSN
5961-01-249-2656
MFG
POWEREX INC
Description
CURRENT RATING PER CHARACTERISTIC: 350.00 AMPERES MAXIMUM ON-STATE CURRENT, AVERAGE AND 4.00 AMPERES MAXIMUM GATE TRIGGER CURRENT, PEAK AND 10000.00 AMPERES MAXIMUM PEAK NONREPETITIVE SURGE CURRENT
FEATURES PROVIDED: BURN IN
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 3B150
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: G161267-1
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 10.751 INCHES MINIMUM AND 11.323 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.631 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION AND 3.0 WATTS MAXIMUM AVERAGE GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 INSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMI
Related Searches:
016293
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012492669
NSN
5961-01-249-2669
MFG
BELL AND HOWELL PHILLIPSBURG CO CORPORATE OFFICES
Description
RETAINER,SEMICONDUCTOR DEVICE
Related Searches:
1D51436-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012492790
NSN
5961-01-249-2790
1D51436-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012492790
NSN
5961-01-249-2790
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
852415-0002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012493044
NSN
5961-01-249-3044
852415-0002
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012493044
NSN
5961-01-249-3044
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
1N5753B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012493147
NSN
5961-01-249-3147
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
31DQ05
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012493148
NSN
5961-01-249-3148
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CAPACITANCE RATING IN PICOFARADS: 240.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 1.50 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC AND 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.390 INCHES MAXIMUM
TERMINAL CIRCLE DIAMETER: 0.051 INCHES MINIMUM AND 0.059 INCHES MAXIMUM
TERMINAL LENGTH: 0.830 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 55.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 50.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SC141E
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012493149
NSN
5961-01-249-3149
SC141E
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012493149
NSN
5961-01-249-3149
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
DESIGN CONTROL REFERENCE: SC141E
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 04713
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
27002A
TRANSISTOR
NSN, MFG P/N
5961012494466
NSN
5961-01-249-4466
MFG
BIOTEK INSTRUMENTS INC. DBA BIOTEK
Description
DESIGN CONTROL REFERENCE: 27002A
III PURCHASE DESCRIPTION IDENTIFICATION: 56198-27002A
MANUFACTURERS CODE: 56198
SPECIAL FEATURES: FET 176 FOR TESTER,DEFIBRILLATOR NSN 6625-00-433-9063,BIO-TEK MODEL QED-III
THE MANUFACTURERS DATA:
Related Searches:
239-046-000
TRANSISTOR
NSN, MFG P/N
5961012494467
NSN
5961-01-249-4467
MFG
TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB
Description
DESIGN CONTROL REFERENCE: 239-046-000
III END ITEM IDENTIFICATION: 6515-00-000-0069
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: MARKED 4506 GE; THREE WIRE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
129-300-006
TRANSISTOR
NSN, MFG P/N
5961012494468
NSN
5961-01-249-4468
MFG
TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB
Description
DESIGN CONTROL REFERENCE: 129-300-006
III END ITEM IDENTIFICATION: 6515-00-000-0069
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: FOR POWER CIRCUIT; TWO WIRE TERMINALS; FLANGE MOUNTING W/TWO SCREW HOLES
THE MANUFACTURERS DATA:
Related Searches:
21003
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494469
NSN
5961-01-249-4469
MFG
BIOTEK INSTRUMENTS INC. DBA BIOTEK
Description
DESIGN CONTROL REFERENCE: 21003
III PURCHASE DESCRIPTION IDENTIFICATION: 56198-21003
MANUFACTURERS CODE: 56198
SPECIAL FEATURES: 1-AMP; 200-CAPACITANCE FOR TESTER,DEFIBRILLATOR NSN 6625-00-433-9063; BIO-TEK MODEL QED-III
THE MANUFACTURERS DATA:
Related Searches:
239-600-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494470
NSN
5961-01-249-4470
239-600-010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494470
NSN
5961-01-249-4470
MFG
TYCO HEALTHCARE GROUP LP DBA VALLEY LAB DIV VALLEYLAB
Description
DESIGN CONTROL REFERENCE: 239-600-010
III END ITEM IDENTIFICATION: 6515-00-000-0069
MANUFACTURERS CODE: 52385
SPECIAL FEATURES: MARKED NUMBER 758
THE MANUFACTURERS DATA:
Related Searches:
1902-0951
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494852
NSN
5961-01-249-4852
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
SZ30035-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494852
NSN
5961-01-249-4852
SZ30035-009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012494852
NSN
5961-01-249-4852
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.4 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.1 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
MB5745
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012494915
NSN
5961-01-249-4915
MB5745
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012494915
NSN
5961-01-249-4915
MFG
MICROSEMI CORPORATION
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A7 BRIDGE 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 1.130 INCHES NOMINAL
OVERALL WIDTH: 1.130 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 WIRE HOOK
Related Searches:
280-21054-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012495346
NSN
5961-01-249-5346
280-21054-101
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012495346
NSN
5961-01-249-5346
MFG
THE BOEING COMPANY DBA BOEING
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21054-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
Related Searches:
2N6768
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012495346
NSN
5961-01-249-5346
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21054-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
Related Searches:
94-1192
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012495346
NSN
5961-01-249-5346
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: MISSILE GRD PWR SUP
MANUFACTURERS CODE: 81205
MFR SOURCE CONTROLLING REFERENCE: 280-21054-101
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL AND ELECTROSTATIC DISCHARGE SENSITIVE ITEM
Related Searches:
1636463
BRACKET,COMPONENT M
NSN, MFG P/N
5961012495361
NSN
5961-01-249-5361
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
GENERAL CHARACTERISTICS ITEM DESCRIPTION: 20 TURRET TERMINALS FOR SEMICONDUCTOR DEVICE DIODES; MAIN PLATE 2.500 IN. X 3.000 IN.; MOUNTING FLANGE 3.000 IN. LG,0.750 IN. W,TWO MTG HOLES 0.163 IN. DIA
