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5961-01-280-1181
20 Products
1N5990B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012801181
NSN
5961-01-280-1181
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
685-0120-300
TRANSISTOR
NSN, MFG P/N
5961012800570
NSN
5961-01-280-0570
MFG
DATEX-OHMEDA INC DBA GE HEALTHCARE BIOSCIENCE BIOPROCESS
Description
DESIGN CONTROL REFERENCE: 685-0120-300
III END ITEM IDENTIFICATION: 6515-01-185-8446
MANUFACTURERS CODE: 44503
SPECIAL FEATURES: MOSFET P-CHANNEL; 3 PIN PLASTIC CASE; STATIC SENSITIVE; FOR USE W/ANESTHESIA APPARATUS-OXYGEN MONITOR,MDL 5120
THE MANUFACTURERS DATA:
Related Searches:
5034
TRANSISTOR
NSN, MFG P/N
5961012800571
NSN
5961-01-280-0571
MFG
ALLIED HEALTHCARE PRODUCTS INC GOMCO DIV
Description
DESIGN CONTROL REFERENCE: 5034
III END ITEM IDENTIFICATION: 6515-01-246-1938
MANUFACTURERS CODE: 25415
SPECIAL FEATURES: USED ON SUCTION,APPARATUS,SURGICAL,MODEL 6003,GONCO CAGE 25415,PART NO. SCRE106D
THE MANUFACTURERS DATA:
Related Searches:
6004-0000-057
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800572
NSN
5961-01-280-0572
6004-0000-057
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800572
NSN
5961-01-280-0572
MFG
DATEX-OHMEDA INC DBA GE HEALTHCARE BIOSCIENCE BIOPROCESS
Description
DESIGN CONTROL REFERENCE: 6004-0000-057
III END ITEM IDENTIFICATION: 6515-01-185-8446
MANUFACTURERS CODE: 44503
SPECIAL FEATURES: 100 VOLT,100 MA IF; FOR USE W/ANESTHESIA APPARATUS-OXYGEN MONITOR,MDL 5120
THE MANUFACTURERS DATA:
Related Searches:
683-0100-304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800573
NSN
5961-01-280-0573
683-0100-304
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800573
NSN
5961-01-280-0573
MFG
DATEX-OHMEDA INC DBA GE HEALTHCARE BIOSCIENCE BIOPROCESS
Description
DESIGN CONTROL REFERENCE: 683-0100-304
III END ITEM IDENTIFICATION: 6515-01-185-8446
MANUFACTURERS CODE: 44503
SPECIAL FEATURES: REV. BREAKDOWN VOLTAGE 1.2 TO 1.25V,REV. CURRENT 0.050 TO 5MA; FOR USE W/ANESTHESIA APPARATUS-OXYGEN MONITOR,MDL 5120
THE MANUFACTURERS DATA:
Related Searches:
683-0100-310
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800574
NSN
5961-01-280-0574
683-0100-310
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800574
NSN
5961-01-280-0574
MFG
DATEX-OHMEDA INC DBA GE HEALTHCARE BIOSCIENCE BIOPROCESS
Description
DESIGN CONTROL REFERENCE: 683-0100-310
III END ITEM IDENTIFICATION: 6515-1-185-8446
MANUFACTURERS CODE: 44503
SPECIAL FEATURES: 0.017 INCH MAX BODY LENGTH; FOR USE W/ANESTHESIA APPARATUS-OXYGEN MONITOR,MDL 5120
THE MANUFACTURERS DATA:
Related Searches:
923627
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012800585
NSN
5961-01-280-0585
923627
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012800585
NSN
5961-01-280-0585
MFG
DU PONT E I DE NEMOURS AND CO INC BIOMEDICAL PRODUCTS DEPT BIORESEARCH SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: 923627
III END ITEM IDENTIFICATION: 6640-01-247-4992
MANUFACTURERS CODE: 6S268
SPECIAL FEATURES: FOR CENTRIFUGE LABORATORY
THE MANUFACTURERS DATA:
Related Searches:
925069-2B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800812
NSN
5961-01-280-0812
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SBD5021H-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800812
NSN
5961-01-280-0812
SBD5021H-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800812
NSN
5961-01-280-0812
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL LENGTH: 1.253 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N6012B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012800815
NSN
5961-01-280-0815
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: ZENER DIODE
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-204AH
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.075 INCHES NOMINAL
OVERALL LENGTH: 0.160 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 33.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -0.5 TO 0.5
Related Searches:
27033100430
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
SAPA OPERACIONES S.L.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
2N6756
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
49126
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
GDI SIMULATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
723041-2
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
V10078
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
V22916-X2-A169
TRANSISTOR
NSN, MFG P/N
5961012801055
NSN
5961-01-280-1055
MFG
NOKIA SIEMENS NETWORKS GMBH & CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 14.00 AMPERES NOMINAL DRAIN CURRENT
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
POWER RATING PER CHARACTERISTIC: 75.0 WATTS NOMINAL AVERAGE OFF-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
12325193
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012801083
NSN
5961-01-280-1083
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325193
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SA10430
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012801083
NSN
5961-01-280-1083
MFG
SEMTECH CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325193
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
SEN-B-961
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012801083
NSN
5961-01-280-1083
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 19200
MFR SOURCE CONTROLLING REFERENCE: 12325193
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 4 BINDING POST
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
0N404056-1
TRANSISTOR
NSN, MFG P/N
5961012801130
NSN
5961-01-280-1130
MFG
NATIONAL SECURITY AGENCY
Description
TRANSISTOR
