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5961-01-417-5026
20 Products
3140191-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014175026
NSN
5961-01-417-5026
MFG
RAYTHEON COMPANY
Description
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 3140191-1
SPEC/STD CONTROLLING DATA:
Related Searches:
SEN-2073-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014175026
NSN
5961-01-417-5026
SEN-2073-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014175026
NSN
5961-01-417-5026
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 3140191-1
SPEC/STD CONTROLLING DATA:
Related Searches:
CR122-29
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176263
NSN
5961-01-417-6263
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11DQ10
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176571
NSN
5961-01-417-6571
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.060 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 15.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
JANTX1N754AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176572
NSN
5961-01-417-6572
JANTX1N754AUR-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176572
NSN
5961-01-417-6572
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N754AUR-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/127
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/127 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE
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U406
TRANSISTOR
NSN, MFG P/N
5961014176596
NSN
5961-01-417-6596
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT-DUAL GATE
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM OFF-STATE VOLTAGE, PEAK
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1.59.30.26854
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014176851
NSN
5961-01-417-6851
1.59.30.26854
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014176851
NSN
5961-01-417-6851
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE ASSEMBLY
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26619
TRANSISTOR
NSN, MFG P/N
5961014176917
NSN
5961-01-417-6917
MFG
FLUKE CORPORATION
Description
TRANSISTOR
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MA4P274-287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176936
NSN
5961-01-417-6936
MA4P274-287
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014176936
NSN
5961-01-417-6936
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
6024.3643.00
TRANSISTOR
NSN, MFG P/N
5961014176937
NSN
5961-01-417-6937
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
TRANSISTOR
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TPM4131RS
TRANSISTOR
NSN, MFG P/N
5961014176937
NSN
5961-01-417-6937
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
683-00016
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014177553
NSN
5961-01-417-7553
683-00016
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961014177553
NSN
5961-01-417-7553
MFG
GENERAL POWER SYSTEMS
Description
DESIGN CONTROL REFERENCE: 683-00016
III END ITEM IDENTIFICATION: UNINTERRUPTABLE POWER SYSTEM
MANUFACTURERS CODE: 62175
THE MANUFACTURERS DATA:
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014-00136
TRANSISTOR
NSN, MFG P/N
5961014177554
NSN
5961-01-417-7554
MFG
GENERAL POWER SYSTEMS
Description
DESIGN CONTROL REFERENCE: 014-00136
III END ITEM IDENTIFICATION: UNINTERRUPTABLE POWER SYSTEM
MANUFACTURERS CODE: 62175
THE MANUFACTURERS DATA:
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2N5487-1
TRANSISTOR
NSN, MFG P/N
5961014177640
NSN
5961-01-417-7640
MFG
GENERAL DYNAMICS ARMAMENT AND TECHNICAL PRODUCTS INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
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590019
TRANSISTOR
NSN, MFG P/N
5961014177685
NSN
5961-01-417-7685
MFG
WESTINGHOUSE ELECTRIC CORP POWER GENERATION-GENERATOR DIV
Description
TRANSISTOR
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AE5207528
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178183
NSN
5961-01-417-8183
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
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HSMS2812
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178183
NSN
5961-01-417-8183
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 1.2 MAXIMUM
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.033 INCHES MINIMUM AND 0.041 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MINIMUM BREAKDOWN VOLTAGE, DC
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AE7206869
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178184
NSN
5961-01-417-8184
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
HSMP3824T31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178184
NSN
5961-01-417-8184
HSMP3824T31
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014178184
NSN
5961-01-417-8184
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CAPACITANCE RATING IN PICOFARADS: 1.0 MAXIMUM
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 25.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.035 INCHES MINIMUM AND 0.047 INCHES MAXIMUM
OVERALL LENGTH: 0.110 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
OVERALL WIDTH: 0.083 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 NOMINAL BREAKDOWN VOLTAGE, DC
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SST404
TRANSISTOR
NSN, MFG P/N
5961014178186
NSN
5961-01-417-8186
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: S0-8
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MINIMUM AND 0.196 INCHES MAXIMUM
OVERALL WIDTH: 0.053 INCHES MINIMUM AND 0.069 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 8 PIN
