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5961-01-305-5270

20 Products

1081H30H18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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1081H30H18

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ES POWER CONTROL SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

JANTX1N5816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054848

NSN

5961-01-305-4848

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JANTX1N5816

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054848

NSN

5961-01-305-4848

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 400.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: CATHODE
III END ITEM IDENTIFICATION: PACER SPECIAL
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL LENGTH: 1.253 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/478 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
TEST DATA DOCUMENT: 88818-A531A152 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

A531A152-104

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054853

NSN

5961-01-305-4853

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A531A152-104

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054853

NSN

5961-01-305-4853

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 6.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 19.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: PACER SPECIAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A531A152 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

JANTX1N968B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054853

NSN

5961-01-305-4853

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JANTX1N968B-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054853

NSN

5961-01-305-4853

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 6.20 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 19.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: PACER SPECIAL
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/117 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 88818-A531A152 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

A531A152-121

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013054854

NSN

5961-01-305-4854

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A531A152-121

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013054854

NSN

5961-01-305-4854

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: PACER SPECIAL
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 88818-A531A152 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

JANTX1N6100

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013054854

NSN

5961-01-305-4854

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JANTX1N6100

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961013054854

NSN

5961-01-305-4854

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

COMPONENT NAME AND QUANTITY: 7 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III END ITEM IDENTIFICATION: PACER SPECIAL
INCLOSURE MATERIAL: CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/474 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 88818-A531A152 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE

A531A152-117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054859

NSN

5961-01-305-4859

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A531A152-117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013054859

NSN

5961-01-305-4859

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

EM1117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055148

NSN

5961-01-305-5148

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EM1117

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055148

NSN

5961-01-305-5148

MFG

POWER DESIGNS INC

A532A210-131

TRANSISTOR

NSN, MFG P/N

5961013055261

NSN

5961-01-305-5261

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A532A210-131

TRANSISTOR

NSN, MFG P/N

5961013055261

NSN

5961-01-305-5261

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER SPECIAL
SPECIAL FEATURES: HARDNESS CRITICAL ITEM

A532A210-133

TRANSISTOR

NSN, MFG P/N

5961013055262

NSN

5961-01-305-5262

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A532A210-133

TRANSISTOR

NSN, MFG P/N

5961013055262

NSN

5961-01-305-5262

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER SPECIAL
SPECIAL FEATURES: HARDNESS CRITICAL ITEM

A532A210-112

TRANSISTOR

NSN, MFG P/N

5961013055263

NSN

5961-01-305-5263

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A532A210-112

TRANSISTOR

NSN, MFG P/N

5961013055263

NSN

5961-01-305-5263

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: PACER SPECIAL
SPECIAL FEATURES: HARDNESS CRITICAL ITEM

A532A210-125

TRANSISTOR

NSN, MFG P/N

5961013055264

NSN

5961-01-305-5264

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A532A210-125

TRANSISTOR

NSN, MFG P/N

5961013055264

NSN

5961-01-305-5264

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

A532A210-118

TRANSISTOR

NSN, MFG P/N

5961013055265

NSN

5961-01-305-5265

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A532A210-118

TRANSISTOR

NSN, MFG P/N

5961013055265

NSN

5961-01-305-5265

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

A531A152-126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055267

NSN

5961-01-305-5267

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A531A152-126

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055267

NSN

5961-01-305-5267

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

1902-0791

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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1902-0791

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

1N942

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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1N942

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

1N943B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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1N943B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

48P06463B001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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48P06463B001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

947060-9432

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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947060-9432

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL

DT780822T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

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DT780822T

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961013055270

NSN

5961-01-305-5270

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

CURRENT RATING PER CHARACTERISTIC: 45.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N943B-1
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND BURN IN
FUNCTION FOR WHICH DESIGNED: VOLTAGE REFERENCE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/157
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/157 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL