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5961-01-326-9983
20 Products
A3012739-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013269983
NSN
5961-01-326-9983
A3012739-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013269983
NSN
5961-01-326-9983
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
MA4P297-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013269983
NSN
5961-01-326-9983
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
353-3781-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013271103
NSN
5961-01-327-1103
353-3781-012
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013271103
NSN
5961-01-327-1103
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 MINIMUM AND 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.045 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 40.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
A61066P237
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013271103
NSN
5961-01-327-1103
A61066P237
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013271103
NSN
5961-01-327-1103
MFG
SKYWORKS SOLUTIONS INC.
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 MINIMUM AND 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.045 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 40.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4P093
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013271103
NSN
5961-01-327-1103
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.2 MINIMUM AND 0.4 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 150.00 NANOAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: BURN IN AND ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.075 INCHES MINIMUM AND 0.086 INCHES MAXIMUM
OVERALL LENGTH: 0.045 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 FLANGE AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM REVERSE VOLTAGE, PEAK AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 40.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, DC
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30CTQ30
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013271486
NSN
5961-01-327-1486
30CTQ30
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013271486
NSN
5961-01-327-1486
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 30.0 MAX
Related Searches:
44-1639-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013271486
NSN
5961-01-327-1486
44-1639-0
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013271486
NSN
5961-01-327-1486
MFG
VARITYPER INC
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.546 INCHES NOMINAL
OVERALL LENGTH: 0.705 INCHES NOMINAL
OVERALL WIDTH: 0.400 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 0.381 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 36.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE AND 30.0 MAX
Related Searches:
13084207-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
13084207-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
MFG
PROGRAM MANAGER ADVANCED ATTACK HELICOPTER BARCOM AMCPM-AAH
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES ON-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 1270-01-142-2855 TARGET DESIGNATOR SET,ELECTRO-OPTICAL
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SA10589
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
SA10589
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES ON-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 1270-01-142-2855 TARGET DESIGNATOR SET,ELECTRO-OPTICAL
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
SEN-B-408-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
SEN-B-408-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013271493
NSN
5961-01-327-1493
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES ON-STATE CURRENT, DC
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 380.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
III END ITEM IDENTIFICATION: 1270-01-142-2855 TARGET DESIGNATOR SET,ELECTRO-OPTICAL
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 0.485 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 TURRET
Related Searches:
7138M20G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013271494
NSN
5961-01-327-1494
7138M20G01
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013271494
NSN
5961-01-327-1494
MFG
GENERAL ELECTRIC COMPANY DBA GE DIV GE - AVIATION
Description
MAJOR COMPONENTS: DIODE 2; TERMINAL BRACKET 1
SPECIAL FEATURES: DIODE P/N JANTX1N3323B AND P/N JANTX1N3323RB
Related Searches:
BC184PC
TRANSISTOR
NSN, MFG P/N
5961013271864
NSN
5961-01-327-1864
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
Related Searches:
VC05-04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272210
NSN
5961-01-327-2210
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR115-01
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272211
NSN
5961-01-327-2211
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CR107-01A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272212
NSN
5961-01-327-2212
MFG
ELDEC CORPORATION DBA CRANE AEROSPACE & ELECTRONIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
0045900675
TRANSISTOR
NSN, MFG P/N
5961013272341
NSN
5961-01-327-2341
MFG
ASCOM DEUTSCHLAND GMBH
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
BD675A
TRANSISTOR
NSN, MFG P/N
5961013272341
NSN
5961-01-327-2341
MFG
FREESCALE SEMICONDUCTOR INC.
Description
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
71010663-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272342
NSN
5961-01-327-2342
71010663-002
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272342
NSN
5961-01-327-2342
MFG
KOLLSMAN INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N6621
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272852
NSN
5961-01-327-2852
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
H8000047-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272852
NSN
5961-01-327-2852
H8000047-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013272852
NSN
5961-01-327-2852
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
