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5961-01-330-4317
20 Products
TIPL755QB
TRANSISTOR
NSN, MFG P/N
5961013304317
NSN
5961-01-330-4317
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
23004
TRANSISTOR
NSN, MFG P/N
5961013304318
NSN
5961-01-330-4318
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
TRANSISTOR
Related Searches:
1002577900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304319
NSN
5961-01-330-4319
1002577900
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304319
NSN
5961-01-330-4319
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
19-015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304320
NSN
5961-01-330-4320
MFG
PALOMAR PRODUCTS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VB40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304320
NSN
5961-01-330-4320
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CLA3132-02-247-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304322
NSN
5961-01-330-4322
CLA3132-02-247-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304322
NSN
5961-01-330-4322
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CLA3131-02-247-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304323
NSN
5961-01-330-4323
CLA3131-02-247-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304323
NSN
5961-01-330-4323
MFG
SKYWORKS SOLUTIONS INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A2S202
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304324
NSN
5961-01-330-4324
MFG
FEI MICROWAVE INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
TI1132
TRANSISTOR
NSN, MFG P/N
5961013304563
NSN
5961-01-330-4563
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
1216185
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304564
NSN
5961-01-330-4564
MFG
FARNELL IN ONE
Description
III END ITEM IDENTIFICATION: WESSEX MK2 FLT SIMULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.285 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
UF5402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304564
NSN
5961-01-330-4564
MFG
GENERAL SEMICONDUCTOR INC
Description
III END ITEM IDENTIFICATION: WESSEX MK2 FLT SIMULATOR
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.285 INCHES MINIMUM AND 0.375 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.048 INCHES MINIMUM AND 0.052 INCHES MAXIMUM
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
003544078 ITEM 183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
003544078 ITEM 183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
MFG
MINISTRY OF DEFENCE NAVY SHIPS SUPP ORT AGENCY
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
C0571504C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
MFG
ROLLS ROYCE MARINE ELECTRICAL SYSTEM LTD
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
FC701012V ITEM 183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
FC701012V ITEM 183
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
MFG
VOSPER THORNYCROFT CONTROLS LTD
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
TVS348
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013304565
NSN
5961-01-330-4565
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 54.0 NOMINAL BREAKDOWN VOLTAGE, INSTANTANEOUS
Related Searches:
8256289-491
TRANSISTOR
NSN, MFG P/N
5961013305435
NSN
5961-01-330-5435
MFG
OPTICAL STORAGE SYSTEMS DEFENSE AVIONICS SYSTEMS DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM DRAIN CURRENT AND 100.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
FN5288
TRANSISTOR
NSN, MFG P/N
5961013305435
NSN
5961-01-330-5435
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM DRAIN CURRENT AND 100.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -30.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
JANTX1N6155A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013305436
NSN
5961-01-330-5436
JANTX1N6155A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013305436
NSN
5961-01-330-5436
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6155A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.185 INCHES MAXIMUM
OVERALL LENGTH: 0.195 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERIST
Related Searches:
8503868-415
TRANSISTOR
NSN, MFG P/N
5961013306511
NSN
5961-01-330-6511
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM G
Related Searches:
DM1080
TRANSISTOR
NSN, MFG P/N
5961013306511
NSN
5961-01-330-6511
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 30.0 MAXIMUM G
