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5961-01-415-2468
20 Products
925079-506B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
925079-506B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961014152468
NSN
5961-01-415-2468
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 REVERSE VOLTAGE, INSTANTANEOUS
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY: 5 TAB, SOLDER LUG
Related Searches:
145-40001-177
TRANSISTOR
NSN, MFG P/N
5961014149644
NSN
5961-01-414-9644
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.14 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.57 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
IRFF230
TRANSISTOR
NSN, MFG P/N
5961014149644
NSN
5961-01-414-9644
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 5.50 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-205AF
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 9.14 MILLIMETERS MAXIMUM
OVERALL LENGTH: 4.57 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 25.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
3140249-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149728
NSN
5961-01-414-9728
MFG
RAYTHEON COMPANY
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.155 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
RZ407
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014149728
NSN
5961-01-414-9728
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.155 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
3140184-1
TRANSISTOR
NSN, MFG P/N
5961014149729
NSN
5961-01-414-9729
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
III END ITEM IDENTIFICATION: F-16
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.540 INCHES NOMINAL
OVERALL LENGTH: 0.795 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 NOMINAL DRAIN TO SOURCE VOLTAGE
Related Searches:
HOA 0880 L51
SENSOR,TRANSMISSIVE
NSN, MFG P/N
5961014150055
NSN
5961-01-415-0055
MFG
HONEYWELL INTERNATIONAL INC . DBA HONEYWELL
Description
COLOR: BLACK
GENERAL CHARACTERISTICS ITEM DESCRIPTION: PHOTOTRANSISTOR OUTPUT; FOUR MOUNTING CONFIGURATIONS; 0.125 IN SLOT WIDTH; 24.0 INCH MINIMUM 26 AWG UL 1429 WIRE LEADS
MATERIAL: PLASTIC
OVERALL LENGTH: 0.717 INCHES NOMINAL
OVERALL WIDTH: 0.415 INCHES NOMINAL
Related Searches:
1N4574A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014150152
NSN
5961-01-415-0152
MFG
COMPENSATED DEVICES INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N6163
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151116
NSN
5961-01-415-1116
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 13.90 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM FORWARD POWER DISSIPATION, MAXIMUM PEAK, TOTAL VALUE
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 67.5 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
JANTX1N5622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151117
NSN
5961-01-415-1117
JANTX1N5622
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151117
NSN
5961-01-415-1117
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES NOMINAL FORWARD CURRENT, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 NOMINAL WORKING PEAK REVERSE VOLTAGE
Related Searches:
CM200DY-12H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151496
NSN
5961-01-415-1496
CM200DY-12H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151496
NSN
5961-01-415-1496
MFG
POWEREX INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
PL803-217-003 ITEM 32
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151496
NSN
5961-01-415-1496
PL803-217-003 ITEM 32
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151496
NSN
5961-01-415-1496
MFG
PIVOTAL POWER INC
Description
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
Related Searches:
122135
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151497
NSN
5961-01-415-1497
122135
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151497
NSN
5961-01-415-1497
MFG
TECHNOLOGY DYNAMICS INC. DBA NOVA ELECTRIC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
CM300DY-12E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151497
NSN
5961-01-415-1497
CM300DY-12E
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014151497
NSN
5961-01-415-1497
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
PL803-217-003 ITEM 13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151499
NSN
5961-01-415-1499
PL803-217-003 ITEM 13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151499
NSN
5961-01-415-1499
MFG
PIVOTAL POWER INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SUES808R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151499
NSN
5961-01-415-1499
MFG
SEMICON COMPONENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
PL803-217-003 ITEM 14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151500
NSN
5961-01-415-1500
PL803-217-003 ITEM 14
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151500
NSN
5961-01-415-1500
MFG
PIVOTAL POWER INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SUES708R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151500
NSN
5961-01-415-1500
MFG
SEMICON COMPONENTS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N5651A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014151600
NSN
5961-01-415-1600
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 19.50 AMPERES MAXIMUM REVERSE CURRENT, DC
III END ITEM IDENTIFICATION: RADAR SET, AN/APG65 GY, TELEFUNKEN SYSTEMTECHNIK GMBH
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 48.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
A197P
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961014151734
NSN
5961-01-415-1734
MFG
GENERAL ELECTRIC CO
Description
SEMICONDUCTOR DEVICE,THYRISTOR
