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5961-01-357-7494
20 Products
KD7212A2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013577494
NSN
5961-01-357-7494
KD7212A2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013577494
NSN
5961-01-357-7494
MFG
POWEREX INC
Description
SPECIFICATION/STANDARD DATA: 66844-KD7212A2 MANUFACTURERS STANDARD
Related Searches:
10670333
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013577890
NSN
5961-01-357-7890
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 10670333
III END ITEM IDENTIFICATION: 4935-01-286-5599
MANUFACTURERS CODE: 18876
THE MANUFACTURERS DATA:
Related Searches:
7555309P0611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
7555309P0611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
DZ880826A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
G309-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
M309-611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
MFG
MICROSEMI CORPORATION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
NH7555309P611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
NH7555309P611
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013578135
NSN
5961-01-357-8135
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIMUM BREAKDOWN VOLTAGE, DC AND 5.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
099-00133-07
FAILURE DETECTOR
NSN, MFG P/N
5961013578211
NSN
5961-01-357-8211
MFG
KATO ENGINEERING INC.
Description
FAILURE DETECTOR
Related Searches:
099-0133-08
POWER CONTROL MODUL
NSN, MFG P/N
5961013578212
NSN
5961-01-357-8212
MFG
KATO ENGINEERING INC.
Description
POWER CONTROL MODUL
Related Searches:
0191A0110
TRANSISTOR
NSN, MFG P/N
5961013579635
NSN
5961-01-357-9635
MFG
MARTIN MARIETTA TECHNOLOGIES INC SUB OF MARTIN MARIETTA CORP AERO AND NAVAL SYSTEMS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
CM1013
TRANSISTOR
NSN, MFG P/N
5961013579635
NSN
5961-01-357-9635
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM GATE CURRENT
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
ZC804A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013579636
NSN
5961-01-357-9636
MFG
API ELECTRONICS INC.
Description
SPECIFICATION/STANDARD DATA: 18518-ZC804A MANUFACTURERS STANDARD
Related Searches:
1713D3113
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013579640
NSN
5961-01-357-9640
1713D3113
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013579640
NSN
5961-01-357-9640
MFG
MARTIN MARIETTA TECHNOLOGIES INC SUB OF MARTIN MARIETTA CORP AERO AND NAVAL SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 6 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 0.50 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT ALL SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 1.000 INCHES NOMINAL
OVERALL WIDTH: 0.750 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 MAXIMUM BREAKDOWN VOLTAGE, INSTANTANEOUS AND 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
SA4840
TRANSISTOR
NSN, MFG P/N
5961013580218
NSN
5961-01-358-0218
MFG
TECHNICAL SERVICES LABORATORY INC DBA TSL-REICO
Description
TRANSISTOR
Related Searches:
IRFD220
TRANSISTOR
NSN, MFG P/N
5961013580219
NSN
5961-01-358-0219
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.80 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES NOMINAL
OVERALL LENGTH: 0.3125 INCHES NOMINAL
OVERALL WIDTH: 0.196 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
F5B3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013580391
NSN
5961-01-358-0391
MFG
EDAL INDUSTRIES INC.
Description
SPECIAL FEATURES: MAX TEMP 190C
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM FORWARD VOLTAGE, DC
Related Searches:
CV7045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013580392
NSN
5961-01-358-0392
MFG
CHAND L.L.C.
Description
DESIGN CONTROL REFERENCE: CV7045
III END ITEM IDENTIFICATION: CONTROL PANEL ENGINE ROOM PART NUMBER FS700394V ABOARD 110 FT WPB COAST GUARD VESSELS
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 0D5X4
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 225.0 NOMINAL PEAK-POINT VOLTAGE
Related Searches:
4100807-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581003
NSN
5961-01-358-1003
MFG
HAMILTON SUNDSTRAND CORPORATION USE CAGE CODE 55820 FOR CATALOGING.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JAN1N3295
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581115
NSN
5961-01-358-1115
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3295
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERI
Related Searches:
JANTX1N3295A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581115
NSN
5961-01-358-1115
JANTX1N3295A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013581115
NSN
5961-01-358-1115
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
CURRENT RATING PER CHARACTERISTIC: 100.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 1600.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N3295
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/246
OVERALL LENGTH: 4.905 INCHES MINIMUM AND 5.710 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.063 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/246 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 UNINSULATED WIRE LEAD W/TERMINAL LUG
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
THREAD SERI
