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5961-01-032-2054
20 Products
0PB125
TRANSISTOR
NSN, MFG P/N
5961010322054
NSN
5961-01-032-2054
MFG
PARIS PLAYGROUND EQUIPMENT INC
Description
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
Related Searches:
E309
TRANSISTOR
NSN, MFG P/N
5961010320462
NSN
5961-01-032-0462
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: AN/URC-87 FSCM 17856
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.222 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 350.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM FORWARD GATE TO SOURCE VOLTAGE
Related Searches:
33801A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320465
NSN
5961-01-032-0465
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
DESIGN CONTROL REFERENCE: 33801A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 50434
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
87-021B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320465
NSN
5961-01-032-0465
MFG
DLA LAND AND MARITIME
Description
DESIGN CONTROL REFERENCE: 33801A
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 50434
TERMINAL TYPE AND QUANTITY: 2 PIN
THE MANUFACTURERS DATA:
Related Searches:
MPN3402
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320466
NSN
5961-01-032-0466
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: RCVR FACSP ANFSQ-91
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.152 INCHES MINIMUM AND 0.162 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 35.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
4803401-01405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
4803401-01405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
MFG
OCEAN APPLIED RESEARCH CORP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 0-1701/GR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
99136966
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
MFG
THALES
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 0-1701/GR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
CD0009-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
CD0009-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 0-1701/GR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
G134692-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 0-1701/GR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
MV1405
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320468
NSN
5961-01-032-0468
MFG
FREESCALE SEMICONDUCTOR INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 0-1701/GR
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 12.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N823
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320471
NSN
5961-01-032-0471
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98095-B65525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
B65525-6B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320471
NSN
5961-01-032-0471
MFG
POWER DESIGNS INC
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98095-B65525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
TS823FB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320471
NSN
5961-01-032-0471
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 7.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 98095-B65525 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.3 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
30-251-3BC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320474
NSN
5961-01-032-0474
30-251-3BC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320474
NSN
5961-01-032-0474
MFG
BELL HELICOPTER TEXTRON INC.
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5557
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 49.0 MAXIMUM REVERSE
Related Searches:
353-9016-880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320474
NSN
5961-01-032-0474
353-9016-880
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320474
NSN
5961-01-032-0474
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5557
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 49.0 MAXIMUM REVERSE
Related Searches:
JAN1N5557
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320474
NSN
5961-01-032-0474
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N5557
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/500
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1500.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/434 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 49.0 MAXIMUM REVERSE
Related Searches:
2435418-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320939
NSN
5961-01-032-0939
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
MANUFACTURERS CODE: 55972
MFR SOURCE CONTROLLING REFERENCE: 2435418-3
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
C4467-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010320939
NSN
5961-01-032-0939
MFG
C O D I CORP DBA CODI SEMICONDUCTOR INC
Description
MANUFACTURERS CODE: 55972
MFR SOURCE CONTROLLING REFERENCE: 2435418-3
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
C9133-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010322006
NSN
5961-01-032-2006
C9133-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010322006
NSN
5961-01-032-2006
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
DESIGN CONTROL REFERENCE: C9133-2
MANUFACTURERS CODE: 81755
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.850 INCHES NOMINAL
OVERALL WIDTH: 0.705 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
THE MANUFACTURERS DATA:
Related Searches:
MAN601A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010322006
NSN
5961-01-032-2006
MAN601A
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010322006
NSN
5961-01-032-2006
MFG
GENERAL INSTRUMENT CORP OPTOELECTRONICS DIV
Description
DESIGN CONTROL REFERENCE: C9133-2
MANUFACTURERS CODE: 81755
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.850 INCHES NOMINAL
OVERALL WIDTH: 0.705 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 PIN
THE MANUFACTURERS DATA:
