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5961-01-374-9397
20 Products
710939-2
TRANSISTOR
NSN, MFG P/N
5961013749397
NSN
5961-01-374-9397
MFG
GE AVIATION SYSTEMS LLC DBA GE AVIATION
Description
III END ITEM IDENTIFICATION: B-1B AIRCRAFT
INCLOSURE MATERIAL: METAL
TERMINAL LENGTH: 0.234 INCHES NOMINAL
Related Searches:
JANTXV2N7225
TRANSISTOR
NSN, MFG P/N
5961013749398
NSN
5961-01-374-9398
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 27.40 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N7225
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TXV AND W/HEAT SINK
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
OVERALL HEIGHT: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL LENGTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
OVERALL WIDTH: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.810 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM
Related Searches:
BCX38C
TRANSISTOR
NSN, MFG P/N
5961013749399
NSN
5961-01-374-9399
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 10000.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.
Related Searches:
SS-32572
TRANSISTOR
NSN, MFG P/N
5961013749399
NSN
5961-01-374-9399
MFG
THALES SOLUTIONS AUSTRALIA PTY LTD
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 10000.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.
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125185D
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013749400
NSN
5961-01-374-9400
MFG
ITT CORPORATION DBA ITT AREOSPACE CONTROLS
Description
III END ITEM IDENTIFICATION: PACER DAWN
Related Searches:
JANTXV1N6628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013749401
NSN
5961-01-374-9401
JANTXV1N6628
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013749401
NSN
5961-01-374-9401
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM FORWARD CURRENT, DC AND 75.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6628
INCLOSURE MATERIAL: CERAMIC OR PLASTIC
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/590
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.137 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/590 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 0.900 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC
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4902-00-3100
TRANSISTOR
NSN, MFG P/N
5961013750476
NSN
5961-01-375-0476
MFG
WAVETEK RF PRODUCTS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-286-3566
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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SST310
TRANSISTOR
NSN, MFG P/N
5961013750476
NSN
5961-01-375-0476
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-286-3566
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
VA-75-0331-003
TRANSISTOR
NSN, MFG P/N
5961013750476
NSN
5961-01-375-0476
MFG
SELEX GALILEO LTD
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-286-3566
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
VUJNP0310
TRANSISTOR
NSN, MFG P/N
5961013750476
NSN
5961-01-375-0476
MFG
WAYNE KERR ELECTRONICS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM GATE CURRENT
III END ITEM IDENTIFICATION: 6625-01-286-3566
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 135.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.2 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.9 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.4 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM GATE TO SOURCE VOLTAGE
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4805-02-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013750477
NSN
5961-01-375-0477
4805-02-0009
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013750477
NSN
5961-01-375-0477
MFG
WAVETEK RF PRODUCTS INC
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
MA4P671
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013750477
NSN
5961-01-375-0477
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CAPACITANCE RATING IN PICOFARADS: 0.3 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: METAL OR PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MINIMUM BREAKDOWN VOLTAGE, DC
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12418342
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013750478
NSN
5961-01-375-0478
12418342
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013750478
NSN
5961-01-375-0478
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.000 INCHES NOMINAL
OVERALL LENGTH: 1.250 INCHES NOMINAL
OVERALL WIDTH: 1.250 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
0N445327-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013750536
NSN
5961-01-375-0536
0N445327-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013750536
NSN
5961-01-375-0536
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
0000-6817-69
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013750540
NSN
5961-01-375-0540
0000-6817-69
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013750540
NSN
5961-01-375-0540
MFG
HILL ROSS CONTROLS CORP
Description
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 FORWARD VOLTAGE, PEAK
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
Related Searches:
0N445069-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013750565
NSN
5961-01-375-0565
0N445069-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013750565
NSN
5961-01-375-0565
MFG
NATIONAL SECURITY AGENCY
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
4902-00-0800
TRANSISTOR
NSN, MFG P/N
5961013750800
NSN
5961-01-375-0800
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
BSR18A
TRANSISTOR
NSN, MFG P/N
5961013750800
NSN
5961-01-375-0800
MFG
PHILIPS COMPONENTS
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: SOT-23
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 1.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 2.8 MILLIMETERS MINIMUM AND 3.0 MILLIMETERS MAXIMUM
OVERALL WIDTH: 1.2 MILLIMETERS MINIMUM AND 1.4 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 300.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
Related Searches:
4902-68-1350
TRANSISTOR
NSN, MFG P/N
5961013750801
NSN
5961-01-375-0801
MFG
WAVETEK RF PRODUCTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 290.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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NE68135
TRANSISTOR
NSN, MFG P/N
5961013750801
NSN
5961-01-375-0801
MFG
PHILIPS SEMICONDUCTORS INC
Description
CURRENT RATING PER CHARACTERISTIC: 65.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
POWER RATING PER CHARACTERISTIC: 290.0 WATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TRANSFER RATIO: 250.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 10.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 1.5 NOMINAL EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
