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5961-01-340-6278
20 Products
142351-0003
TRANSISTOR
NSN, MFG P/N
5961013406278
NSN
5961-01-340-6278
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NUCLEAR HARDNESS CRITICAL FEATURE: HARDENED
OVERALL HEIGHT: 0.252 INCHES MAXIMUM
OVERALL LENGTH: 0.945 INCHES MAXIMUM
OVERALL WIDTH: 0.413 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 535.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SP3439
TRANSISTOR
NSN, MFG P/N
5961013402553
NSN
5961-01-340-2553
MFG
SOLITRON DEVICES INC.
Description
TRANSISTOR
Related Searches:
31217
TRANSISTOR
NSN, MFG P/N
5961013402554
NSN
5961-01-340-2554
MFG
TRIO LABORATORIES INC
Description
TRANSISTOR
Related Searches:
PS19118
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013402556
NSN
5961-01-340-2556
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1009969/1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013402862
NSN
5961-01-340-2862
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - FRENCH NATIONAL MARINES
III END ITEM IDENTIFICATION: TARTAR SYSTEMS AN/SPG51C RADAR,RAYTHEON CO
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3FF40
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013402863
NSN
5961-01-340-2863
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 3.40 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 NOMINAL WORKING PEAK REVERSE VOLTAGE AND 400.0 NOMINAL REPETITIVE PEAK REVERSE VOLTAGE
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13-93719-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013403091
NSN
5961-01-340-3091
13-93719-1
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013403091
NSN
5961-01-340-3091
MFG
ELSTON ELECTRONICS CORP
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
4810-5060
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013403285
NSN
5961-01-340-3285
MFG
ROGERSON KRATOS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RGP15G
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013403589
NSN
5961-01-340-3589
MFG
GENERAL SEMICONDUCTOR INC
Description
SPECIAL FEATURES: HIGH TEMPERATURES METALLURGICALLY BONDED
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 5.0 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
1856868P1
TRANSISTOR
NSN, MFG P/N
5961013404545
NSN
5961-01-340-4545
MFG
GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT POWER COMPONENTS OPN
Description
TRANSISTOR
Related Searches:
9031-382J
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
9031-382J
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
MFG
EATON CORPORATION
Description
DESIGN CONTROL REFERENCE: N0676YS120
III END ITEM IDENTIFICATION: AC CONTROLLER P/N 1308D0001-450 VAC
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 64481
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.929 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
N0676YS120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
N0676YS120
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
MFG
IXYS LONG BEACH INC.
Description
DESIGN CONTROL REFERENCE: N0676YS120
III END ITEM IDENTIFICATION: AC CONTROLLER P/N 1308D0001-450 VAC
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 64481
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.929 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
T7S0127504DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
T7S0127504DN
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013404744
NSN
5961-01-340-4744
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
DESIGN CONTROL REFERENCE: N0676YS120
III END ITEM IDENTIFICATION: AC CONTROLLER P/N 1308D0001-450 VAC
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 64481
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.929 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL GATE TRIGGER VOLTAGE, INSTANTANEOUS
Related Searches:
4880106
TRANSISTOR
NSN, MFG P/N
5961013405424
NSN
5961-01-340-5424
MFG
BLACKSTONENEY ULTRASONICS INC
Description
III END ITEM IDENTIFICATION: 6530-01-333-3171
III PURCHASE DESCRIPTION IDENTIFICATION: 22723-4880106
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.000 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: FOR USE ON CLEANER,ULTRASONIC; MODEL CT-18
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MINIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE OPEN-CIRCUITED
Related Searches:
94-1468
TRANSISTOR
NSN, MFG P/N
5961013406275
NSN
5961-01-340-6275
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -28.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6806
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/562
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
Related Searches:
JANTX2N6806
TRANSISTOR
NSN, MFG P/N
5961013406275
NSN
5961-01-340-6275
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -28.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6806
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: SWITCHING
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/562
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
Related Searches:
JANTXV2N6299
TRANSISTOR
NSN, MFG P/N
5961013406276
NSN
5961-01-340-6276
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 120.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N6299
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT-DARLINGTON CONNECTED
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/540
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 75.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPEC
Related Searches:
142351-0001
TRANSISTOR
NSN, MFG P/N
5961013406277
NSN
5961-01-340-6277
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.252 INCHES MAXIMUM
OVERALL LENGTH: 0.945 INCHES MAXIMUM
OVERALL WIDTH: 0.413 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 107.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER R
Related Searches:
NH142351-0001
TRANSISTOR
NSN, MFG P/N
5961013406277
NSN
5961-01-340-6277
MFG
DLA LAND AND MARITIME
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.252 INCHES MAXIMUM
OVERALL LENGTH: 0.945 INCHES MAXIMUM
OVERALL WIDTH: 0.413 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 107.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER R
Related Searches:
RZB12050YM
TRANSISTOR
NSN, MFG P/N
5961013406277
NSN
5961-01-340-6277
MFG
PHILIPS COMPONENTS
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND ELECTROSTATIC SENSITIVE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.252 INCHES MAXIMUM
OVERALL LENGTH: 0.945 INCHES MAXIMUM
OVERALL WIDTH: 0.413 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 107.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 CASE
TRANSFER RATIO: 30.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 65.0 MAXIMUM COLLECTOR TO EMITTER R
