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5961-01-408-1062
20 Products
1189-0042
TRANSISTOR
NSN, MFG P/N
5961014081062
NSN
5961-01-408-1062
MFG
PACE INC ORPORATED
Description
TRANSISTOR
Related Searches:
BTA08-400C
TRANSISTOR
NSN, MFG P/N
5961014081062
NSN
5961-01-408-1062
MFG
STMICROELECTRONICS INC
Description
TRANSISTOR
Related Searches:
Q1157
TRANSISTOR
NSN, MFG P/N
5961014081062
NSN
5961-01-408-1062
MFG
TECCOR ELECTRONICS INC SEMICONDUCTOR DIV SUB OF RANCO
Description
TRANSISTOR
Related Searches:
T0810DJ
TRANSISTOR
NSN, MFG P/N
5961014081062
NSN
5961-01-408-1062
MFG
ST MICROELECTRONICS LTD
Description
TRANSISTOR
Related Searches:
5905708
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014081064
NSN
5961-01-408-1064
5905708
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014081064
NSN
5961-01-408-1064
MFG
NAVAL SEA SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
JANTX1N6167A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014081086
NSN
5961-01-408-1086
JANTX1N6167A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014081086
NSN
5961-01-408-1086
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6167A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
III END ITEM IDENTIFICATION: EEA MK16 MOD0
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL LENGTH: 0.195 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 99.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
JANTXV2N3420
TRANSISTOR
NSN, MFG P/N
5961014081091
NSN
5961-01-408-1091
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV2N3420
III END ITEM IDENTIFICATION: EEA MK16 MOD0
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/393
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/393 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED
Related Searches:
141455-1
TRANSISTOR
NSN, MFG P/N
5961014081366
NSN
5961-01-408-1366
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
TRANSISTOR
Related Searches:
5KP7.0A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014081368
NSN
5961-01-408-1368
MFG
GENERAL SEMICONDUCTOR INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.375 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7.5 MAXIMUM REVERSE VOLTAGE, DC
Related Searches:
CCL5750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014081884
NSN
5961-01-408-1884
MFG
CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
CDD10810
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014081887
NSN
5961-01-408-1887
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX1N4445B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014082446
NSN
5961-01-408-2446
JANTX1N4445B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014082446
NSN
5961-01-408-2446
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N4445B
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500-406
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
Related Searches:
105SEB295
TRANSISTOR
NSN, MFG P/N
5961014084187
NSN
5961-01-408-4187
MFG
SOLITRON DEVICES INC.
Description
III END ITEM IDENTIFICATION: PATRIOT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED,COLLECTOR-EMITTER BREAKDOWN VOLTAGE=750V
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 18876-11467880 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
11467880-1
TRANSISTOR
NSN, MFG P/N
5961014084187
NSN
5961-01-408-4187
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
III END ITEM IDENTIFICATION: PATRIOT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED,COLLECTOR-EMITTER BREAKDOWN VOLTAGE=750V
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 18876-11467880 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
PP8954
TRANSISTOR
NSN, MFG P/N
5961014084187
NSN
5961-01-408-4187
MFG
MICROSEMI PPC INC
Description
III END ITEM IDENTIFICATION: PATRIOT
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.177 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: SELECTED,COLLECTOR-EMITTER BREAKDOWN VOLTAGE=750V
TERMINAL TYPE AND QUANTITY: 2 PIN
TEST DATA DOCUMENT: 18876-11467880 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 850.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH SPECIFIED CIRCUIT BETWEEN BASE AND EMITTER
Related Searches:
JANTX2N3421SA
TRANSISTOR
NSN, MFG P/N
5961014084532
NSN
5961-01-408-4532
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3421SA
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500-393
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
JTX1N4125
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014084533
NSN
5961-01-408-4533
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-S-19500-435
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 47.0 NOMINAL REGULATOR VOLTAGE
Related Searches:
PAT-7278-10857
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014084617
NSN
5961-01-408-4617
PAT-7278-10857
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961014084617
NSN
5961-01-408-4617
MFG
MITEQ INC.
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
1N6129A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085034
NSN
5961-01-408-5034
1N6129A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085034
NSN
5961-01-408-5034
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 IN. BODY LG
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL BREAKDOWN VOLTAGE, DC
Related Searches:
IN6129A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085034
NSN
5961-01-408-5034
IN6129A-JANTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014085034
NSN
5961-01-408-5034
MFG
SEMTECH CORPORATION
Description
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 5 IN. BODY LG
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 91.0 NOMINAL BREAKDOWN VOLTAGE, DC
