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5961-01-109-8523
20 Products
1884-0269
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098523
NSN
5961-01-109-8523
1884-0269
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098523
NSN
5961-01-109-8523
MFG
HEWLETT PACKARD CO
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
Related Searches:
800983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098324
NSN
5961-01-109-8324
800983-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098324
NSN
5961-01-109-8324
MFG
DATA PRODUCTS CORP
Description
INCLOSURE MATERIAL: GLASS OR METAL
MOUNTING METHOD: TERMINAL
Related Searches:
800592-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098325
NSN
5961-01-109-8325
800592-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098325
NSN
5961-01-109-8325
MFG
DATA PRODUCTS CORP
Description
INCLOSURE MATERIAL: GLASS OR METAL
MOUNTING METHOD: TERMINAL
Related Searches:
508C509H18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098326
NSN
5961-01-109-8326
508C509H18
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098326
NSN
5961-01-109-8326
MFG
HUGHES CORPORATION DBA WESCHLER INSTRUMENTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
GB12A76V60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098326
NSN
5961-01-109-8326
GB12A76V60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098326
NSN
5961-01-109-8326
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
H-1060-B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098326
NSN
5961-01-109-8326
MFG
THE WHITMOR COMPANY INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SCR1-2-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098327
NSN
5961-01-109-8327
MFG
EFCOR INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
8TRY-10-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098328
NSN
5961-01-109-8328
8TRY-10-16
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098328
NSN
5961-01-109-8328
MFG
HOBART CORPORATION DBA HOBART
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BN815
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098329
NSN
5961-01-109-8329
MFG
UDYLITE PLATING SYSTEMS OCCIDENTAL CHEMICAL CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
69742-AC
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098330
NSN
5961-01-109-8330
MFG
RELIANCE ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
600686-2C
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098331
NSN
5961-01-109-8331
MFG
RELIANCE ELECTRIC
Description
SEMICONDUCTOR DEVICE,DIODE
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600826-1RD
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098386
NSN
5961-01-109-8386
600826-1RD
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098386
NSN
5961-01-109-8386
MFG
RELIANCE ELECTRIC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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263500301-0009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011098409
NSN
5961-01-109-8409
263500301-0009
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011098409
NSN
5961-01-109-8409
MFG
ELECTRIC BOAT CORPORATION
Description
SEMICONDUCTOR DEVICES,UNITIZED
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704-4685423-1-21
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011098409
NSN
5961-01-109-8409
704-4685423-1-21
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011098409
NSN
5961-01-109-8409
MFG
NAVAL SHIP SYSTEMS COMMAND
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
105SEB114
TRANSISTOR
NSN, MFG P/N
5961011098521
NSN
5961-01-109-8521
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1854-0673
TRANSISTOR
NSN, MFG P/N
5961011098521
NSN
5961-01-109-8521
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 117.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
1901-0841
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098522
NSN
5961-01-109-8522
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), FORRESTAL CLASS CV, KIDD CLASS DDG, VIRGINIA CLASS CGN (41), LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
600145-410-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098522
NSN
5961-01-109-8522
600145-410-001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098522
NSN
5961-01-109-8522
MFG
MACKAY COMMUNICATIONS INC DBA MACKAY MARINE
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), FORRESTAL CLASS CV, KIDD CLASS DDG, VIRGINIA CLASS CGN (41), LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
HSCH-1001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011098522
NSN
5961-01-109-8522
MFG
MICROWAVE SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: FEAT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: ARLEIGH BURKE CLASS DDG, SPRUANCE CLASS DD (963), FORRESTAL CLASS CV, KIDD CLASS DDG, VIRGINIA CLASS CGN (41), LOS ANGELES CLASS SSN (688), NIMITZ CLASS CVN, STURGEON CLASS SSN (637), TICONDEROGA CLASS CG (47)
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.090 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PIN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC
Related Searches:
5060-3204
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098523
NSN
5961-01-109-8523
5060-3204
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011098523
NSN
5961-01-109-8523
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE
