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5961-01-295-8533
20 Products
MTM35N05
TRANSISTOR
NSN, MFG P/N
5961012958533
NSN
5961-01-295-8533
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: 4920-01-187-4068 TEST SYSTEM,AUTOMATIC,RADAR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-204AE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.563 INCHES MAXIMUM
OVERALL WIDTH: 0.820 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SO
Related Searches:
472-1357-001
TRANSISTOR
NSN, MFG P/N
5961012958534
NSN
5961-01-295-8534
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: AN/USQ82(V) MULTIPLEX SYSTEM
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
SRF2839H
TRANSISTOR
NSN, MFG P/N
5961012958534
NSN
5961-01-295-8534
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.40 AMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS
III END ITEM IDENTIFICATION: AN/USQ82(V) MULTIPLEX SYSTEM
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC
Related Searches:
24820
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
MFG
GENERAL SEMICONDUCTOR INDUSTRIES INC
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 12.00 AMPERES NOMINAL PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE PHOTO
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIM
Related Searches:
2804468-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
2804468-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 12.00 AMPERES NOMINAL PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE PHOTO
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIM
Related Searches:
GZ24820C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
GZ24820C
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
MFG
PROTEK DEVICES LP DBA PROTEK DEVICES
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 12.00 AMPERES NOMINAL PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE PHOTO
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIM
Related Searches:
NH2804468-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
NH2804468-2
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012958538
NSN
5961-01-295-8538
MFG
DLA LAND AND MARITIME
Description
COMPONENT NAME AND QUANTITY: 15 SEMICONDUCTOR DEVICE DIODE
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 300.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS AND 12.00 AMPERES NOMINAL PEAK PULSE CURRENT ALL SEMICONDUCTOR DEVICE PHOTO
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR METAL OR CERAMIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.192 INCHES MAXIMUM
OVERALL LENGTH: 0.930 INCHES MAXIMUM
OVERALL WIDTH: 0.485 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.25 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: NUCLEAR HARDNESS CRITICAL ITEM
TERMINAL LENGTH: 0.165 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MINIM
Related Searches:
H980100-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
H980100-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
MFG
RAYTHEON COMPANY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MAXIMUM
OVERALL WIDTH: 0.890 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SA10281
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
SA10281
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
MFG
SEMTECH CORPORATION
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MAXIMUM
OVERALL WIDTH: 0.890 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
SEN-B-800-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
SEN-B-800-001B
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961012958556
NSN
5961-01-295-8556
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1000.0 REVERSE VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A8 BRIDGE 3 PHASE
MATERIAL: SILICON
MOUNTING METHOD: THREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.310 INCHES MAXIMUM
OVERALL LENGTH: 1.520 INCHES MAXIMUM
OVERALL WIDTH: 0.890 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 5 UNINSULATED WIRE LEAD
Related Searches:
005993
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012958585
NSN
5961-01-295-8585
MFG
BIG JOE MFG CO
Description
III END ITEM IDENTIFICATION: 3930-01-278-0170 TRUCK,PALLET,POWERED
MAJOR COMPONENTS: DIODE 3; BOARD 1
SPECIAL FEATURES: INSULATED WIRE LEAD WITH TERMINAL; CONNECTOR PLUG WITH 3 INSULATED WIRE
Related Searches:
10560502
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012958617
NSN
5961-01-295-8617
MFG
GENERAL MOTORS OVERSEAS DISTRIBUTION CORP DIV OF GENERAL MOTORS CORP
Description
DESIGN CONTROL REFERENCE: 10560502
III END ITEM IDENTIFICATION: 2320011231608
MANUFACTURERS CODE: 72712
THE MANUFACTURERS DATA:
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91300909
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012958996
NSN
5961-01-295-8996
MFG
THALES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
BDW32
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012958996
NSN
5961-01-295-8996
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
HV5254
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012958997
NSN
5961-01-295-8997
MFG
MONSANTO CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
C230-Z12-C17
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012958998
NSN
5961-01-295-8998
C230-Z12-C17
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012958998
NSN
5961-01-295-8998
MFG
SIEMENS SCHWEIZ AG
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
MP52S
HOLDER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961012958998
NSN
5961-01-295-8998
MFG
MONSANTO CO
Description
HOLDER,SEMICONDUCTOR DEVICE
Related Searches:
2382-101-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012959023
NSN
5961-01-295-9023
2382-101-5
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012959023
NSN
5961-01-295-9023
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
5557689-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012959146
NSN
5961-01-295-9146
5557689-1
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961012959146
NSN
5961-01-295-9146
MFG
NAVAL SEA SYSTEMS COMMAND
Description
DESIGN CONTROL REFERENCE: 5557689-1
III END ITEM IDENTIFICATION: MK 32 TORPEDO
MANUFACTURERS CODE: 53711
THE MANUFACTURERS DATA:
Related Searches:
10446
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012959223
NSN
5961-01-295-9223
MFG
INTEGRA TECHNOLOGIES CORP
Description
DESIGN CONTROL REFERENCE: 10446
III END ITEM IDENTIFICATION: 52058-2650,TAPE EVALUATOR
MAJOR COMPONENTS: BULB OR PHOTOCELLS 3
MANUFACTURERS CODE: 72181
OVERALL HEIGHT: 0.790 INCHES NOMINAL
OVERALL LENGTH: 1.380 INCHES NOMINAL
OVERALL WIDTH: 0.470 INCHES MINIMUM AND 0.530 INCHES MAXIMUM
THE MANUFACTURERS DATA:
