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5961-01-353-9187
20 Products
12302643-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539187
NSN
5961-01-353-9187
12302643-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539187
NSN
5961-01-353-9187
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC
Related Searches:
D33167-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013537112
NSN
5961-01-353-7112
D33167-1
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013537112
NSN
5961-01-353-7112
MFG
RICHARDS IMAGERY INTERPRETATION SYSTEMS L.L.C.
Description
III END ITEM IDENTIFICATION: HF04 LIGHT TABLE
Related Searches:
HLMP1120RED
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013537848
NSN
5961-01-353-7848
HLMP1120RED
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013537848
NSN
5961-01-353-7848
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
900-3647
RECTIFIER MOD
NSN, MFG P/N
5961013538387
NSN
5961-01-353-8387
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
III END ITEM IDENTIFICATION: L1011 AIRCRAFT,GENERAL INSTRUMENT CORP
Related Searches:
85260011-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013538651
NSN
5961-01-353-8651
85260011-1
RETAINER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013538651
NSN
5961-01-353-8651
MFG
RTRONICS INC
Description
ACCOMMODATED ITEM SECURING DEVICE TYPE: HOLES
MATERIAL: ALUMINUM ALLOY
MOUNTING FACILITY TYPE AND QUANTITY: 2 UNTHREADED HOLE SINGLE MOUNTING FACILITY
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 4.117 INCHES NOMINAL
OVERALL WIDTH: 0.650 INCHES NOMINAL
STYLE DESIGNATOR: 1C RECTANGULAR PRISM
UNTHREADED MOUNTING HOLE DIAMETER: 0.168 INCHES NOMINAL SINGLE MOUNTING FACILITY
Related Searches:
4100807-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013538692
NSN
5961-01-353-8692
MFG
ONTIC ENGINEERING & MANUFACTURING INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
68-7076-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013538695
NSN
5961-01-353-8695
68-7076-02
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013538695
NSN
5961-01-353-8695
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 50-HZ CYCLE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JAN2N2025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013538695
NSN
5961-01-353-8695
JAN2N2025
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013538695
NSN
5961-01-353-8695
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 50-HZ CYCLE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.500 INCHES
OVERALL LENGTH: 1.750 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.031 INCHES MINIMUM AND 1.620 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPNP
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 2 TAB, SOLDER LUG
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
150-028959-003
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013538704
NSN
5961-01-353-8704
150-028959-003
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961013538704
NSN
5961-01-353-8704
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
SEMICONDUCTOR DEVICE ASSEMBLY
Related Searches:
151-0719-00
TRANSISTOR
NSN, MFG P/N
5961013539107
NSN
5961-01-353-9107
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
151-5000-00
TRANSISTOR
NSN, MFG P/N
5961013539182
NSN
5961-01-353-9182
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
MMBT3906T1/T2
TRANSISTOR
NSN, MFG P/N
5961013539182
NSN
5961-01-353-9182
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
151-5001-00
TRANSISTOR
NSN, MFG P/N
5961013539183
NSN
5961-01-353-9183
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
TRANSISTOR
Related Searches:
MMBT3904T1/T2
TRANSISTOR
NSN, MFG P/N
5961013539183
NSN
5961-01-353-9183
MFG
FREESCALE SEMICONDUCTOR INC.
Description
TRANSISTOR
Related Searches:
JANTX2N6898
TRANSISTOR
NSN, MFG P/N
5961013539184
NSN
5961-01-353-9184
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N6898
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: DRAIN
FEATURES PROVIDED: QUALITY ASSURANCE LEVEL TX AND HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/565
OVERALL HEIGHT: 0.250 INCHES MINIMUM AND 0.360 INCHES MAXIMUM
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/565 GOVERNMENT SPECIFI
Related Searches:
152-0589-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539185
NSN
5961-01-353-9185
152-0589-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539185
NSN
5961-01-353-9185
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N942
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539185
NSN
5961-01-353-9185
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N4002RL
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539186
NSN
5961-01-353-9186
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 5.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
698555
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539186
NSN
5961-01-353-9186
MFG
FLUKE CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: REVERSE POLARITY
FUNCTION FOR WHICH DESIGNED: RECTIFIER
INCLOSURE MATERIAL: PLASTIC OR CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 5.0 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
BP15999
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013539187
NSN
5961-01-353-9187
MFG
BURKE PRODUCTS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS OR CERAMIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 31.4 MINIMUM BREAKDOWN VOLTAGE, DC
