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5961-01-453-4331
20 Products
IRLZ44N-013
TRANSISTOR
NSN, MFG P/N
5961014534331
NSN
5961-01-453-4331
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-220
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.584 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
OVERALL WIDTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 NOMINAL DRAIN TO SOURCE VOLTAGE
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1N4686
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534459
NSN
5961-01-453-4459
MFG
MICROSEMI CORPORATION
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 0.200 GRAMS
CURRENT RATING PER CHARACTERISTIC: 70.00 MICROAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS NOMINAL POWER OUTPUT
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.9 NOMINAL NOMINAL REGULATOR VOLTAGE
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ICL8069DCZR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534497
NSN
5961-01-453-4497
ICL8069DCZR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534497
NSN
5961-01-453-4497
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) DUMMY TERMINAL QUANTITY: 1
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
OVERALL WIDTH: 0.016 INCHES MINIMUM AND 0.022 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.250 INCHES MINIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 MINIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 1.25 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
381449-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534535
NSN
5961-01-453-4535
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MANUFACTURERS CODE: 37695
MFR SOURCE CONTROLLING REFERENCE: 381449-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC
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MA4P7104F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534535
NSN
5961-01-453-4535
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MANUFACTURERS CODE: 37695
MFR SOURCE CONTROLLING REFERENCE: 381449-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC
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UM7104F
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534535
NSN
5961-01-453-4535
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
MANUFACTURERS CODE: 37695
MFR SOURCE CONTROLLING REFERENCE: 381449-1
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, DC
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381479-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534544
NSN
5961-01-453-4544
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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BB419
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534544
NSN
5961-01-453-4544
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES NOMINAL FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.037 INCHES MINIMUM AND 0.053 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.152 INCHES MAXIMUM
OVERALL WIDTH: 0.055 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 28.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS
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649023-2
TRANSISTOR
NSN, MFG P/N
5961014534564
NSN
5961-01-453-4564
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.157 INCHES NOMINAL
OVERALL LENGTH: 0.642 INCHES NOMINAL
OVERALL WIDTH: 0.820 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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RF2342
TRANSISTOR
NSN, MFG P/N
5961014534564
NSN
5961-01-453-4564
MFG
M/A-COM TECHNOLOGY SOLUTIONS INC. DBA COMMERCIAL ELECTRONICS PHO DIV POWER HYBRIDS OPERATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: CERAMIC
INTERNAL CONFIGURATION: FIELD EFFECT
MOUNTING METHOD: BRACKET
OVERALL HEIGHT: 0.157 INCHES NOMINAL
OVERALL LENGTH: 0.642 INCHES NOMINAL
OVERALL WIDTH: 0.820 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 BEAM LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 65.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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SMBG16A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014534571
NSN
5961-01-453-4571
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: D0-215AA
OVERALL LENGTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
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8002096P1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014535662
NSN
5961-01-453-5662
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 320.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: ESU 10KVA INV E/I E/I FSCM 94117
MANUFACTURERS CODE: 94117
MFR SOURCE CONTROLLING REFERENCE: 8002096P1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.780 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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APT30D60B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014535662
NSN
5961-01-453-5662
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 320.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: ESU 10KVA INV E/I E/I FSCM 94117
MANUFACTURERS CODE: 94117
MFR SOURCE CONTROLLING REFERENCE: 8002096P1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.780 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
HFA25PB60
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014535662
NSN
5961-01-453-5662
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE AND 70.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS AND 320.00 AMPERES MAXIMUM FORWARD CURRENT, NONREPETITIVE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: ESU 10KVA INV E/I E/I FSCM 94117
MANUFACTURERS CODE: 94117
MFR SOURCE CONTROLLING REFERENCE: 8002096P1
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.185 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 0.819 INCHES MINIMUM AND 0.845 INCHES MAXIMUM
OVERALL WIDTH: 0.610 INCHES MINIMUM AND 0.640 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL LENGTH: 0.780 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, DC AND 600.0 MAXIMUM REVERSE VOLTAGE, PEAK AND 600.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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JANTX2N4854U
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014536818
NSN
5961-01-453-6818
JANTX2N4854U
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961014536818
NSN
5961-01-453-6818
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N4854U
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/421
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/421 GOVERNMENT SPECIFICATION
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
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381551-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014536957
NSN
5961-01-453-6957
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
III END ITEM IDENTIFICATION: RADIO CONT SE E/I FSCM 04713
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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MBRS330
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014536957
NSN
5961-01-453-6957
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: RADIO CONT SE E/I FSCM 04713
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.305 INCHES MINIMUM AND 0.320 INCHES MAXIMUM
OVERALL WIDTH: 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 30.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
Related Searches:
8002095P1
TRANSISTOR
NSN, MFG P/N
5961014536991
NSN
5961-01-453-6991
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: ESU 10KVA INV E/I FSCM 94117
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
MTY30N50E
TRANSISTOR
NSN, MFG P/N
5961014536991
NSN
5961-01-453-6991
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 21.00 AMPERES MAXIMUM BASE CURRENT, DC
III END ITEM IDENTIFICATION: ESU 10KVA INV E/I FSCM 94117
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NP
TERMINAL TYPE AND QUANTITY: 3 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 500.0 MINIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
1SMB5924B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961014537013
NSN
5961-01-453-7013
MFG
FREESCALE SEMICONDUCTOR INC.
Description
III END ITEM IDENTIFICATION: RADIO CONT SE E/I FSCM 04713, GRC-206(V)5
INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SPECIAL FEATURES: SURFACE MOUNTED
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.10 NOMINAL REGULATOR VOLTAGE, DC
