My Quote Request
No products added yet
5961-01-381-7855
20 Products
782508
TRANSISTOR
NSN, MFG P/N
5961013817855
NSN
5961-01-381-7855
MFG
FLUKE CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -250.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
VP0550N3
TRANSISTOR
NSN, MFG P/N
5961013817855
NSN
5961-01-381-7855
MFG
SUPERTEX INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: -250.00 MILLIAMPERES MAXIMUM PEAK REPETITIVE OFF-STATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.670 INCHES MINIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
OVERALL WIDTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -500.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
1877AS328-1
TRANSISTOR
NSN, MFG P/N
5961013817869
NSN
5961-01-381-7869
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
IRF543R
TRANSISTOR
NSN, MFG P/N
5961013817869
NSN
5961-01-381-7869
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 25.00 AMPERES MAXIMUM DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 3.56 MILLIMETERS MINIMUM AND 4.82 MILLIMETERS MAXIMUM
OVERALL LENGTH: 14.23 MILLIMETERS MINIMUM AND 16.51 MILLIMETERS MAXIMUM
OVERALL WIDTH: 9.66 MILLIMETERS MINIMUM AND 10.66 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 12.70 MILLIMETERS MINIMUM AND 14.73 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
Related Searches:
353-0407-052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817935
NSN
5961-01-381-7935
353-0407-052
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817935
NSN
5961-01-381-7935
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A10 INVERTED CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.680 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS AND BASE SILVER
SPECIAL FEATURES: RESCREENED FOR CGAD PROGRAMS; CONTAINS BERYLLIUM OXIDE
TERMINAL TYPE AND QUANTITY: 4 TAB
Related Searches:
837146
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817939
NSN
5961-01-381-7939
MFG
FLUKE CORPORATION
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 NOMINAL REACH THROUGH VOLTAGE AND 8.2 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
TMPZ5237
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817939
NSN
5961-01-381-7939
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
INCLOSURE MATERIAL: PLASTIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.1197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.5 NOMINAL REACH THROUGH VOLTAGE AND 8.2 NOMINAL REGULATOR VOLTAGE, DC
Related Searches:
PS-100738
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817953
NSN
5961-01-381-7953
MFG
MARCONI COMMUNICATIONS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A531A134-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817954
NSN
5961-01-381-7954
A531A134-102
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817954
NSN
5961-01-381-7954
MFG
KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
DKV6515-76
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817954
NSN
5961-01-381-7954
DKV6515-76
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817954
NSN
5961-01-381-7954
MFG
SKYWORKS SOLUTIONS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
SMV1690H
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013817954
NSN
5961-01-381-7954
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
353-0407-042
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817959
NSN
5961-01-381-7959
353-0407-042
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961013817959
NSN
5961-01-381-7959
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 BREAKDOWN VOLTAGE, DC
CIRCUIT CONNECTION STYLE DESIGNATOR: A2 CENTER TAP 1 PHASE
MATERIAL: SILICON
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
OVERALL HEIGHT: 0.420 INCHES MAXIMUM
OVERALL LENGTH: 0.680 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MAXIMUM
PRECIOUS MATERIAL AND LOCATION: PLATED TERMINALS AND BASE SILVER
SPECIAL FEATURES: RESCREENED FOR CGAD PROGRAMS; CONTAINS BERYLLIUM OXIDE
TERMINAL TYPE AND QUANTITY: 4 TAB
Related Searches:
601110-024
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013817966
NSN
5961-01-381-7966
601110-024
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961013817966
NSN
5961-01-381-7966
MFG
POWCON INC
Description
RECTIFIER,SEMICONDUCTOR DEVICE
Related Searches:
12268459-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818109
NSN
5961-01-381-8109
12268459-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818109
NSN
5961-01-381-8109
MFG
U S ARMY TANK AUTOMOTIVE COMMAND AMSTA-IM-MM
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 195.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.238 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 280.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
MR5040R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818109
NSN
5961-01-381-8109
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 195.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.625 INCHES NOMINAL
OVERALL LENGTH: 0.238 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 450.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 280.0 MAXIMUM REVERSE VOLTAGE, TOTAL RMS
Related Searches:
FBM-Z-204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818133
NSN
5961-01-381-8133
MFG
VEECO INSTRUMENTS INC LAMBDA DIV
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
RZ359
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818175
NSN
5961-01-381-8175
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
SC5961-0164-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818175
NSN
5961-01-381-8175
SC5961-0164-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013818175
NSN
5961-01-381-8175
MFG
DRS ICAS, LLC
Description
CURRENT RATING PER CHARACTERISTIC: 1.50 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MINIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 2500.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
0M6004SAT
TRANSISTOR
NSN, MFG P/N
5961013818184
NSN
5961-01-381-8184
MFG
MALLINCKRODT SPECIALTY CHEMICALS CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT AND 15.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.665 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: ENVIRONMENTAL STRESS SCREENING
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-TR162 DRAWING AND 08748-TR169 DRAWING
VOLTAGE RATING I
Related Searches:
HM1001
TRANSISTOR
NSN, MFG P/N
5961013818184
NSN
5961-01-381-8184
MFG
MICROSEMI CORP. - POWER PRODUCTS GROUP DBA ADVANCED POWER TECHNOLOGY INC DIV MICROSEMI CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 4.50 AMPERES MAXIMUM DRAIN CURRENT AND 15.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-257
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
OVERALL LENGTH: 0.645 INCHES MINIMUM AND 0.665 INCHES MAXIMUM
OVERALL WIDTH: 0.410 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: ENVIRONMENTAL STRESS SCREENING
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 08748-TR162 DRAWING AND 08748-TR169 DRAWING
VOLTAGE RATING I
