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5961-01-462-3354

20 Products

35-2257-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623354

NSN

5961-01-462-3354

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35-2257-2

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623354

NSN

5961-01-462-3354

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4944
THE MANUFACTURERS DATA:

LO4944

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623354

NSN

5961-01-462-3354

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LO4944

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623354

NSN

5961-01-462-3354

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257-2
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4944
THE MANUFACTURERS DATA:

35-2257-3

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623355

NSN

5961-01-462-3355

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35-2257-3

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623355

NSN

5961-01-462-3355

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257-3
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4945
THE MANUFACTURERS DATA:

LO4945

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623355

NSN

5961-01-462-3355

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LO4945

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014623355

NSN

5961-01-462-3355

MFG

DLA LAND AND MARITIME

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2257-3
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: REFERENCE NUMBER DIFFERENTIATING MATERIAL WILL BE IN ACCORDANCE WITH NAVAL INVENTORY CONTROL POINT ACTIVITY HX QUALITY CONTROL. MANUFACTURING AND TESTING SPECIFICATIONS AVAILABLE AT THE DLA ICP
SPECIAL FEATURES: ITEM MUST COMPLY WITH REQUIREMENTS OF DEFENSE SUPPLY CENTER COLUMBUS PRODUCTION STANDARD NO. LO4945
THE MANUFACTURERS DATA:

1N5806US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623435

NSN

5961-01-462-3435

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1N5806US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623435

NSN

5961-01-462-3435

MFG

MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5806US
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL HEIGHT: 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

JAN1N5806US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623435

NSN

5961-01-462-3435

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JAN1N5806US

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623435

NSN

5961-01-462-3435

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N5806US
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: PRESS FIT
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/477
OVERALL HEIGHT: 0.103 INCHES MAXIMUM
OVERALL LENGTH: 0.200 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/477 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

4150-1SM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623451

NSN

5961-01-462-3451

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4150-1SM

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623451

NSN

5961-01-462-3451

MFG

MICROSEMI CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4150UR-1
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-195000/231
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7

JAN1N4150UR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623451

NSN

5961-01-462-3451

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JAN1N4150UR-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623451

NSN

5961-01-462-3451

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N4150UR-1
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-213AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: COMPRESSION
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-195000/231
OVERALL DIAMETER: 0.063 INCHES MINIMUM AND 0.067 INCHES MAXIMUM
OVERALL LENGTH: 0.130 INCHES MINIMUM AND 0.146 INCHES MAXIMUM
OVERALL WIDTH: 0.103 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/231 GOVERNMENT SPECIFICATION
TERMINAL TYPE AND QUANTITY: 2 CASE
TEST DATA DOCUMENT: 81349-MIL-PRF-19500 SPECIFICATION
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 7

312A1982P1

TRANSISTOR

NSN, MFG P/N

5961014623469

NSN

5961-01-462-3469

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312A1982P1

TRANSISTOR

NSN, MFG P/N

5961014623469

NSN

5961-01-462-3469

MFG

BAE SYSTEMS CONTROLS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
III END ITEM IDENTIFICATION: F110-100-129
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL LENGTH: 1.177 INCHES MINIMUM AND 1.197 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 3 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN

MBRB2545CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623471

NSN

5961-01-462-3471

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MBRB2545CT

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623471

NSN

5961-01-462-3471

MFG

FREESCALE SEMICONDUCTOR INC.

Description

INCLOSURE MATERIAL: PLASTIC
OVERALL HEIGHT: 0.070 INCHES MAXIMUM
OVERALL LENGTH: 0.470 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 45.0 MAXIMUM REVERSE VOLTAGE, PEAK

007-00245-0000

TRANSISTOR

NSN, MFG P/N

5961014623492

NSN

5961-01-462-3492

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007-00245-0000

TRANSISTOR

NSN, MFG P/N

5961014623492

NSN

5961-01-462-3492

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-05039-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623503

NSN

5961-01-462-3503

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007-05039-0001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623503

NSN

5961-01-462-3503

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

019-08083-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623504

NSN

5961-01-462-3504

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019-08083-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623504

NSN

5961-01-462-3504

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-06085-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623505

NSN

5961-01-462-3505

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007-06085-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623505

NSN

5961-01-462-3505

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-06092-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623506

NSN

5961-01-462-3506

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007-06092-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014623506

NSN

5961-01-462-3506

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00161-0000

TRANSISTOR

NSN, MFG P/N

5961014623521

NSN

5961-01-462-3521

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007-00161-0000

TRANSISTOR

NSN, MFG P/N

5961014623521

NSN

5961-01-462-3521

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00187-0000

TRANSISTOR

NSN, MFG P/N

5961014623523

NSN

5961-01-462-3523

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007-00187-0000

TRANSISTOR

NSN, MFG P/N

5961014623523

NSN

5961-01-462-3523

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00257-0000

TRANSISTOR

NSN, MFG P/N

5961014623524

NSN

5961-01-462-3524

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007-00257-0000

TRANSISTOR

NSN, MFG P/N

5961014623524

NSN

5961-01-462-3524

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00313-0002

TRANSISTOR

NSN, MFG P/N

5961014623525

NSN

5961-01-462-3525

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007-00313-0002

TRANSISTOR

NSN, MFG P/N

5961014623525

NSN

5961-01-462-3525

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

007-00323-0000

TRANSISTOR

NSN, MFG P/N

5961014623528

NSN

5961-01-462-3528

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007-00323-0000

TRANSISTOR

NSN, MFG P/N

5961014623528

NSN

5961-01-462-3528

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE