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5961-01-484-7169

20 Products

D22-0027-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847169

NSN

5961-01-484-7169

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D22-0027-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847169

NSN

5961-01-484-7169

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,15A, 45 VOLTAS SCHOTTKY

D22-0014-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847170

NSN

5961-01-484-7170

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D22-0014-002

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847170

NSN

5961-01-484-7170

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE 3A, 600 VOLTS RECT FR

5612917

TRANSISTOR

NSN, MFG P/N

5961014847340

NSN

5961-01-484-7340

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5612917

TRANSISTOR

NSN, MFG P/N

5961014847340

NSN

5961-01-484-7340

MFG

NAVAL SEA SYSTEMS COMMAND

Description

INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE

IRFM9140

TRANSISTOR

NSN, MFG P/N

5961014847340

NSN

5961-01-484-7340

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IRFM9140

TRANSISTOR

NSN, MFG P/N

5961014847340

NSN

5961-01-484-7340

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

INCLOSURE MATERIAL: PLASTIC AND METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -20.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -2.0 MINIMUM GATE TO SOURCE THRESHOLD VOLTAGE

85HFLR60S02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847410

NSN

5961-01-484-7410

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85HFLR60S02

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847410

NSN

5961-01-484-7410

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 25.0 GRAMS
FUNCTION FOR WHICH DESIGNED: CHOPPER
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL WIDTH ACROSS FLATS: 17.45 MILLIMETERS MAXIMUM
SPECIAL FEATURES: OPERATING TEMP M40.0/125.0 C; ANODE CASE; SHORT REVERSE RECOVERY TIME; LOW STORED CHARGE; WIDE CURRENT RANGE; EXCELLENT SURGE CAPABILITIES
THREAD QUANTITY PER INCH: 28
THREAD SERIES DESIGNATOR: UNF

11464513

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014847461

NSN

5961-01-484-7461

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11464513

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014847461

NSN

5961-01-484-7461

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

III END ITEM IDENTIFICATION: 5999-01-225-5713
MATERIAL: ALUMINUM ALLOY 5052
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-A-250/8 FED SPEC SINGLE MATERIAL RESPONSE
OVERALL LENGTH: 0.600 INCHES NOMINAL
SURFACE TREATMENT: CHROMATE
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-C-5541 CL 1A OR 3 MIL SPEC SINGLE TREATMENT RESPONSE

11464512

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014847463

NSN

5961-01-484-7463

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11464512

RETAINER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014847463

NSN

5961-01-484-7463

MFG

U S ARMY AVIATION AND MISSILE COMMAND

Description

III END ITEM IDENTIFICATION: PATRIOT CIRCUIT CARD ASSEMBLY 11464463
MATERIAL: COPPER ALLOY 102 OR COPPER ALLOY 104 OR COPPER ALLOY 105 OR COPPER ALLOY 107 OR COPPER ALLOY 110 OR COPPER ALLOY 113 OR COPPER ALLOY 114 OR COPPER ALLOY 116 OR COPPER ALLOY 120 OR COPPER ALLOY 122 OR COPPER ALLOY 123 OR COPPER ALLOY 125 OR COPPER ALLOY
MATERIAL DOCUMENT AND CLASSIFICATION: QQ-C-576 FED SPEC ALL MATERIAL RESPONSES
SURFACE TREATMENT: TIN
SURFACE TREATMENT DOCUMENT AND CLASSIFICATION: MIL-P-81728 MIL SPEC SINGLE TREATMENT RESPONSE
~1: 127 OR COPPER ALLOY 128 OR COPPER ALLOY 130

CR-0746

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847616

NSN

5961-01-484-7616

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CR-0746

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014847616

NSN

5961-01-484-7616

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: DIODE,TERMINAL TYPES PIN, SW

TRS-0061

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014848667

NSN

5961-01-484-8667

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TRS-0061

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961014848667

NSN

5961-01-484-8667

MFG

POWERWARE CORPORATION DBA BEST POWER

Description

III END ITEM IDENTIFICATION: POWER SUPPLY, OLIVER PERRY CLASS FFG

25-13866PC34

RETAINING DEVICE

NSN, MFG P/N

5961014848705

NSN

5961-01-484-8705

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25-13866PC34

RETAINING DEVICE

NSN, MFG P/N

5961014848705

NSN

5961-01-484-8705

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 55-3757
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

35-2030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014848981

NSN

5961-01-484-8981

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35-2030

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014848981

NSN

5961-01-484-8981

MFG

DRS POWER & CONTROL TECHNOLOGIES INC.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2030
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

99-5033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014848981

NSN

5961-01-484-8981

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99-5033

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014848981

NSN

5961-01-484-8981

MFG

INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.

Description

CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 35-2030
MANUFACTURERS CODE: 27192
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH NAVICP ACTIVITY HX QUALITY CONTROL, MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:

MURF1620CT

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014849273

NSN

5961-01-484-9273

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MURF1620CT

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961014849273

NSN

5961-01-484-9273

MFG

FREESCALE SEMICONDUCTOR INC.

Description

ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 16.00 AMPERES REPETITIVE PEAK FORWARD CURRENT
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
MATERIAL: PLASTIC EPOXY
MOUNTING METHOD: UNTHREADED HOLE
OPERATING TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG

SKN71/12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014849420

NSN

5961-01-484-9420

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SKN71/12

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014849420

NSN

5961-01-484-9420

MFG

SEMIKRON INTL INC

Description

CURRENT RATING PER CHARACTERISTIC: 150.00 AMPERES MAXIMUM FORWARD CURRENT, TOTAL RMS
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 34.5 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE

1SMB5929BT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850146

NSN

5961-01-485-0146

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1SMB5929BT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850146

NSN

5961-01-485-0146

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
INCLOSURE MATERIAL: PLASTIC
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL

1SMB5928B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850151

NSN

5961-01-485-0151

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1SMB5928B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850151

NSN

5961-01-485-0151

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 28.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 115.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

1SMB5928BT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850151

NSN

5961-01-485-0151

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1SMB5928BT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850151

NSN

5961-01-485-0151

MFG

USM CORP SUB OF EMHART INDUSTRIES INC MOLLY FASTENER DIV

Description

CURRENT RATING PER CHARACTERISTIC: 28.80 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT AND 115.00 MILLIAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 13.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0

P6SMB39A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850162

NSN

5961-01-485-0162

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P6SMB39A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850162

NSN

5961-01-485-0162

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR AND UNIDIRECTIONAL
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.05 NOMINAL BREAKDOWN VOLTAGE, DC AND 33.30 MAXIMUM WORKING PEAK REVERSE VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -

P6SMB39AT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850162

NSN

5961-01-485-0162

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P6SMB39AT3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961014850162

NSN

5961-01-485-0162

MFG

USM CORP SUB OF EMHART INDUSTRIES INC MOLLY FASTENER DIV

Description

CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES NOMINAL REVERSE CURRENT, DC AND 100.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR AND UNIDIRECTIONAL
III END ITEM IDENTIFICATION: AAU, AIR COMBAT MANEUVERING INSTRUMENTS
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-214AA
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.075 INCHES MINIMUM AND 0.095 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MINIMUM AND 0.220 INCHES MAXIMUM
OVERALL WIDTH: 0.130 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PRINTED CIRCUIT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 39.05 NOMINAL BREAKDOWN VOLTAGE, DC AND 33.30 MAXIMUM WORKING PEAK REVERSE VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -

2010867

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014850245

NSN

5961-01-485-0245

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2010867

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961014850245

NSN

5961-01-485-0245

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

III END ITEM IDENTIFICATION: MODULATOR ASSEMBLY
SPECIAL FEATURES: ITEM AKA: SILCON CONTROLLED RECTIIFIER POWER MODULE (SCR-DIODE); NEXT ASSY., 2010596, USED ON KA1-1