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5961-01-572-5404

20 Products

MR2001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015725404

NSN

5961-01-572-5404

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MR2001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015725404

NSN

5961-01-572-5404

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL FORWARD CURRENT, TOTAL RMS AND 20.00 AMPERES NOMINAL AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FUNCTION FOR WHICH DESIGNED: RECTIFIER
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 120.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE

P6SMBJ9.1CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015726733

NSN

5961-01-572-6733

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P6SMBJ9.1CA

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015726733

NSN

5961-01-572-6733

MFG

LITTELFUSE INC.

Description

III END ITEM IDENTIFICATION: SHOP EQUIPMENT, GUIDED MISSILE SYSTEM NSN 4935-01-136-0233

1.5KE7.5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015727869

NSN

5961-01-572-7869

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1.5KE7.5

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015727869

NSN

5961-01-572-7869

MFG

PROTEK DEVICES LP DBA PROTEK DEVICES

Description

III END ITEM IDENTIFICATION: SHOP EQUIPMENT,GUIDED MISSILE,NSN 4935-01-136-0233
III PART NAME ASSIGNED BY CONTROLLING AGENCY: 1500 WATT MOSORB TRANSIENT VOLTAGE SUPPRESSORS
OVERALL DIAMETER: 0.189 INCHES MINIMUM AND 0.209 INCHES MAXIMUM
OVERALL LENGTH: 2.335 INCHES NOMINAL

554-1171-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015728389

NSN

5961-01-572-8389

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554-1171-01

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015728389

NSN

5961-01-572-8389

MFG

L-3 COMMUNICATIONS AVIONICS SYSTEMS INC

Description

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T1-3/4
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.232 INCHES MINIMUM
OVERALL LENGTH: 0.339 INCHES MINIMUM
SPECIAL FEATURES: RED LED DIODE, 5VDC, 7MA
TERMINAL LENGTH: 1.063 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN

554-1108-03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015728390

NSN

5961-01-572-8390

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554-1108-03

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015728390

NSN

5961-01-572-8390

MFG

L-3 COMMUNICATIONS AVIONICS SYSTEMS INC

Description

JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T1-3/4
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.232 INCHES MINIMUM
OVERALL LENGTH: 0.339 INCHES MINIMUM
SPECIAL FEATURES: GREEN LED DIODE, 90MA
TERMINAL LENGTH: 1.063 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN

MMUN2111

TRANSISTOR

NSN, MFG P/N

5961015728794

NSN

5961-01-572-8794

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MMUN2111

TRANSISTOR

NSN, MFG P/N

5961015728794

NSN

5961-01-572-8794

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

III END ITEM IDENTIFICATION: B-1B AIRCRAFT
SPECIAL FEATURES: NHA GLIDESLOPE SYNTHESIZER CIRCUIT CAR ASSEMBLY A3

MMUN2111LT1

TRANSISTOR

NSN, MFG P/N

5961015728794

NSN

5961-01-572-8794

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MMUN2111LT1

TRANSISTOR

NSN, MFG P/N

5961015728794

NSN

5961-01-572-8794

MFG

FREESCALE SEMICONDUCTOR INC.

Description

III END ITEM IDENTIFICATION: B-1B AIRCRAFT
SPECIAL FEATURES: NHA GLIDESLOPE SYNTHESIZER CIRCUIT CAR ASSEMBLY A3

4805128M60

TRANSISTOR

NSN, MFG P/N

5961015729723

NSN

5961-01-572-9723

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4805128M60

TRANSISTOR

NSN, MFG P/N

5961015729723

NSN

5961-01-572-9723

MFG

MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION

2KBP08

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015730974

NSN

5961-01-573-0974

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2KBP08

RECTIFIER,SEMICONDUCTOR DEVICE

NSN, MFG P/N

5961015730974

NSN

5961-01-573-0974

MFG

INTERNATIONAL RECTIFIER CORPORATION

Description

ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 REPETITIVE PEAK REVERSE VOLTAGE
MATERIAL: GLASS
SPECIAL FEATURES: MAXIMUM RMS VOLTAGE 560, HIGH CASE DIELECTRIC STRENGTH, HIGH SURGE CURRENT CAPABILITY

70-BSMD-250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731197

NSN

5961-01-573-1197

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70-BSMD-250

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731197

NSN

5961-01-573-1197

MFG

SE RELAYS LLC MAGNECRAFT DIV SE RELAYS LLC MAGNECRAFT

Description

III END ITEM IDENTIFICATION: AN/TPT T1(V) RADAR
MOUNTING METHOD: PRESS FIT

SC5945-0030-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731197

NSN

5961-01-573-1197

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SC5945-0030-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731197

NSN

5961-01-573-1197

MFG

DRS ICAS, LLC

Description

III END ITEM IDENTIFICATION: AN/TPT T1(V) RADAR
MOUNTING METHOD: PRESS FIT

MMUN2211

TRANSISTOR

NSN, MFG P/N

5961015731679

NSN

5961-01-573-1679

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MMUN2211

TRANSISTOR

NSN, MFG P/N

5961015731679

NSN

5961-01-573-1679

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS

Description

III END ITEM IDENTIFICATION: B1-B AIRCRAFT
INCLOSURE MATERIAL: METAL

MMUN2211LT1

TRANSISTOR

NSN, MFG P/N

5961015731679

NSN

5961-01-573-1679

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MMUN2211LT1

TRANSISTOR

NSN, MFG P/N

5961015731679

NSN

5961-01-573-1679

MFG

ON SEMICONDUCTOR

Description

III END ITEM IDENTIFICATION: B1-B AIRCRAFT
INCLOSURE MATERIAL: METAL

1N6041

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731961

NSN

5961-01-573-1961

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1N6041

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015731961

NSN

5961-01-573-1961

MFG

LITTELFUSE INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES NOMINAL REVERSE CURRENT, DC
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 7.5 MILLIMETERS MINIMUM AND 9.0 MILLIMETERS MAXIMUM
POWER RATING PER CHARACTERISTIC: 15000.0 WATTS NOMINAL PEAK GATE POWER DISSIPATION
TERMINAL LENGTH: 25.4 MILLIMETERS MINIMUM AND 31.8 MILLIMETERS MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS

MA4P7102F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732484

NSN

5961-01-573-2484

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MA4P7102F

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732484

NSN

5961-01-573-2484

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: DIODE PIN ATTENUATOR, SWITCH
SPECIAL FEATURES: 200 VOLT; 2 PIN CASE

6012855-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732487

NSN

5961-01-573-2487

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6012855-004

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732487

NSN

5961-01-573-2487

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

Description

INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE

CMDZ5225B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732487

NSN

5961-01-573-2487

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CMDZ5225B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015732487

NSN

5961-01-573-2487

MFG

CENTRAL SEMICONDUCTOR CORP DIV CENTRAL STATE INDUSTRIES INC

Description

INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: COMPRESSION
OVERALL LENGTH: 0.102 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 NOMINAL NOMINAL REGULATOR VOLTAGE

SM15T18A BOITER SMC

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015733600

NSN

5961-01-573-3600

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SM15T18A BOITER SMC

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015733600

NSN

5961-01-573-3600

MFG

GENERAL SEMICONDUCTOR INC

Description

III PART NAME ASSIGNED BY CONTROLLING AGENCY: TRANSIENT VOLTAGE SUPPRESOR
INCLOSURE MATERIAL: GLASS
SPECIAL FEATURES: 1500 WATT PEAK PULSE POWER DISSIPATION (PPPM) CABABILTY; LEAD FREE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 17.1 MINIMUM BREAKDOWN VOLTAGE, DC AND 18.0 MAXIMUM BREAKDOWN VOLTAGE, DC

V12ZA1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015733794

NSN

5961-01-573-3794

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V12ZA1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015733794

NSN

5961-01-573-3794

MFG

LITTELFUSE INC.

Description

CAPACITANCE RATING IN PICOFARADS: 3350.0 NOMINAL
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES NOMINAL PEAK POINT CURRENT
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.354 INCHES NOMINAL
OVERALL LENGTH: 0.472 INCHES NOMINAL
SPECIAL FEATURES: 2 COPPER/TIN LEADS; POLYMER EPOXY INSULATION; BULK PACK; 0.6 TRANSIENT JOULES; 100 AMP PEAK CURRENT
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN

436-0801

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015734017

NSN

5961-01-573-4017

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436-0801

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961015734017

NSN

5961-01-573-4017

MFG

RS COMPONENTS LIMITED

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 AMPERES NOMINAL FORWARD CURRENT, AVERAGE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.600 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 KNIFE BLADE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM REVERSE VOLTAGE, DC AND 60.0 MAXIMUM REVERSE VOLTAGE, PEAK