My Quote Request
5962-00-461-5192
20 Products
15-107413-021
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615192
NSN
5962-00-461-5192
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC951L
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615182
NSN
5962-00-461-5182
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/COMPLEMENT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RM6875
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615182
NSN
5962-00-461-5182
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/COMPLEMENT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SW751
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615182
NSN
5962-00-461-5182
MFG
STEWART-WARNER CORP MICROCIRCUITS DIV
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/COMPLEMENT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SW751-2P
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615182
NSN
5962-00-461-5182
MFG
STEWART-WARNER CORP MICROCIRCUITS DIV
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/COMPLEMENT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
15-107406-121
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
ML552A1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
RG61CK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
RAYTHEON DATA SYSTEMS CO
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
RG61CK/3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
RG61CK/833B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
SG61-38
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615188
NSN
5962-00-461-5188
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
BODY HEIGHT: 0.040 INCHES MINIMUM AND 0.055 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND SYNCHRONOUS AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 04655-15-107406 DRAWING
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH
Related Searches:
15-107414-121
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
MC558F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
ML558B1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
RG141CK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
RAYTHEON DATA SYSTEMS CO
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
RG141CK/3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
RG141CK/833B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
SG141-38
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615190
NSN
5962-00-461-5190
MFG
MC GUIRK ELECTRONICS CO INC
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
BODY WIDTH: 0.180 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SO
Related Searches:
RG130CK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615192
NSN
5962-00-461-5192
MFG
RAYTHEON DATA SYSTEMS CO
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RG130CK/833B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004615192
NSN
5962-00-461-5192
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE