My Quote Request
5962-00-762-0614
20 Products
N8267B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007620614
NSN
5962-00-762-0614
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 275.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
Related Searches:
S8267B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962007620614
NSN
5962-00-762-0614
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 275.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
Related Searches:
CA3050
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007620615
NSN
5962-00-762-0615
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: DARLINGTON-CONNECTED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CA3051
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007620615
NSN
5962-00-762-0615
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN INFORMATION SYSTEMS AUTOMATED SPARES
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: DARLINGTON-CONNECTED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 88083B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962007620615
NSN
5962-00-762-0615
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, DIFFERENTIAL
FEATURES PROVIDED: DARLINGTON-CONNECTED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
247AS-C0817-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
2664-6521
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
LOCKHEED MARTIN CORP LOCKHEED MARTIN MISSION SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
3101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
351-7676-010
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
43-010072-25
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
APPLIED TECHNOLOGY DIV OF ANTEKNA INC
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
542-245-043
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
ELETTRONICA SPA
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
5489J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
800042-000
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
COMMUNICATION SYSTEMS TECHNOLOGY INC TYLUS SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
C3101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
D3101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
DM5489J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
HRAM-0064-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
P3101
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO
Related Searches:
S8225F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962007620617
NSN
5962-00-762-0617
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND W/DECODED OUTPUT AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND SCHOTTKY AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 160.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VO