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5962-01-076-5904
20 Products
730-0039
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010765904
NSN
5962-01-076-5904
MFG
HUBBELL HARVEY INC PULSECOM DIV
Description
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND W/STROBE AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE_!
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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HR10806
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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5962010765902
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5962-01-076-5902
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765902
NSN
5962-01-076-5902
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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NSN, MFG P/N
5962010765903
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5962-01-076-5903
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
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5962010765903
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MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
Related Searches:
SN92848W
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010765903
NSN
5962-01-076-5903
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DISABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 910.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932820 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DE
Related Searches:
CD4042BD
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010765904
NSN
5962-01-076-5904
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/ENABLE AND W/STROBE AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE_!
