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5961-01-081-5985
20 Products
138-0660
TRANSISTOR
NSN, MFG P/N
5961010815985
NSN
5961-01-081-5985
MFG
WAVETEK ROCKLAND INC DIV
Description
TRANSISTOR
Related Searches:
40-014245-03
TRANSISTOR
NSN, MFG P/N
5961010814206
NSN
5961-01-081-4206
MFG
INTERLINK COMMUNICATIONS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MINIMUM AND 0.326 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30890-40-014245 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BAS
Related Searches:
91516990
TRANSISTOR
NSN, MFG P/N
5961010814206
NSN
5961-01-081-4206
MFG
THALES
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MINIMUM AND 0.326 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30890-40-014245 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BAS
Related Searches:
PMD17K80
TRANSISTOR
NSN, MFG P/N
5961010814206
NSN
5961-01-081-4206
MFG
SEMTECH CORPUS CHRISTI INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 AMPERES MAXIMUM BASE CURRENT, DC AND 16.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.308 INCHES MINIMUM AND 0.326 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 1 CASE AND 2 PIN
TEST DATA DOCUMENT: 30890-40-014245 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BAS
Related Searches:
13220E3971-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
13220E3971-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
MFG
CECOM LR CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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307A8730P3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
307A8730P3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
MFG
BAE SYSTEMS CONTROLS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
959278-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
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ERZC14DK680
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
ERZC14DK680
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814207
NSN
5961-01-081-4207
MFG
MATSUSHITA ELECTRIC CORP OF AMERICA M/S 7H-4
Description
CURRENT RATING PER CHARACTERISTIC: 250.00 AMPERES MAXIMUM PEAK POINT CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.636 INCHES MAXIMUM
OVERALL LENGTH: 0.745 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.250 INCHES NOMINAL
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 68.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UES802
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814208
NSN
5961-01-081-4208
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 70.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
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50241001-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814209
NSN
5961-01-081-4209
50241001-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814209
NSN
5961-01-081-4209
MFG
SYNTEGRA / USA/ INC COMPUTER PARTS AND SUPPLIES ARH205
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.750 INCHES
OVERALL LENGTH: 3.100 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 1.620 INCHES MINIMUM AND 1.750 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 UNINSULATED WIRE LEAD W/TERMINAL LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
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SQ367
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814540
NSN
5961-01-081-4540
MFG
API ELECTRONICS INC.
Description
CRITICALITY CODE JUSTIFICATION: FEAT
CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: 14.60 MINIMUM TO 15.30 MAX PF; JUNCTION PATTERN ARRANGEMENT: PN
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 37.0 MAXIMUM DRAIN SUPPLY VOLTAGE
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SCSF1R
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010814805
NSN
5961-01-081-4805
MFG
SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL DIAMETER: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.700 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 THREADED STUD AND 1 CASE
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
101000199
TRANSISTOR
NSN, MFG P/N
5961010815116
NSN
5961-01-081-5116
MFG
DATA GENERAL CORP M/S 9S17
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTO
Related Searches:
54-031-084
TRANSISTOR
NSN, MFG P/N
5961010815116
NSN
5961-01-081-5116
MFG
TLT-BABCOCK INC DEL
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTO
Related Searches:
TIP41B
TRANSISTOR
NSN, MFG P/N
5961010815116
NSN
5961-01-081-5116
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM BASE CURRENT, DC AND 6.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 75.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.190 INCHES MAXIMUM
OVERALL LENGTH: 0.540 INCHES MAXIMUM
OVERALL WIDTH: 0.420 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 80.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTO
Related Searches:
088-98-00001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010815117
NSN
5961-01-081-5117
088-98-00001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010815117
NSN
5961-01-081-5117
MFG
L-3 COMMUNICATIONS CORPORATION DBA L3 COMMUNICATION AVIATION RECORDERS DIVISION DIV L3 COMMUNICATIONS CORPORATION AVIATION RECORDERS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1-5KE6-8
III END ITEM IDENTIFICATION: DIRECT ACCESS RADAR CHANNEL (DARC)3
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.367 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 NOMINAL REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1-5KE6-8
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010815117
NSN
5961-01-081-5117
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1-5KE6-8
III END ITEM IDENTIFICATION: DIRECT ACCESS RADAR CHANNEL (DARC)3
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.367 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 NOMINAL REVERSE VOLTAGE, TOTAL RMS
Related Searches:
41144-901-00-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010815117
NSN
5961-01-081-5117
41144-901-00-0
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010815117
NSN
5961-01-081-5117
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
DESIGN CONTROL REFERENCE: 1-5KE6-8
III END ITEM IDENTIFICATION: DIRECT ACCESS RADAR CHANNEL (DARC)3
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 08125
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.367 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.100 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 NOMINAL REVERSE VOLTAGE, TOTAL RMS
Related Searches:
1854-0630
TRANSISTOR
NSN, MFG P/N
5961010815334
NSN
5961-01-081-5334
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
Related Searches:
SS2077-1
TRANSISTOR
NSN, MFG P/N
5961010815334
NSN
5961-01-081-5334
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: MINIMUM VOLTAGE; JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
