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5961-01-048-3071

20 Products

2503988-203

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483071

NSN

5961-01-048-3071

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2503988-203

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483071

NSN

5961-01-048-3071

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

SR2107-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483071

NSN

5961-01-048-3071

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SR2107-3

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483071

NSN

5961-01-048-3071

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS

730-1004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010483398

NSN

5961-01-048-3398

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730-1004

SEMICONDUCTOR DEVICES,UNITIZED

NSN, MFG P/N

5961010483398

NSN

5961-01-048-3398

MFG

DIALIGHT CORPORATION

Description

COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
OVERALL HEIGHT: 0.438 INCHES MAXIMUM
OVERALL LENGTH: 1.365 INCHES MINIMUM AND 1.385 INCHES MAXIMUM
OVERALL WIDTH: 0.686 INCHES MAXIMUM
SPECIAL FEATURES: LED DISPLAY
TERMINAL TYPE AND QUANTITY: 10 PIN

13-808627-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

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13-808627-4

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

GC-10045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

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GC-10045

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

MFG

MICROSEMI CORP-MASSACHUSETTS DBA MICROSEMI-LOWELL DIV MICROSEMI - LOWELL

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

GC-1768-S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

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GC-1768-S

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

MFG

API ELECTRONICS INC.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

GC10045-55

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

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GC10045-55

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

MFG

LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MISSILES AND FIRE CONTROL

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

MDI60205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

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MDI60205

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010483896

NSN

5961-01-048-3896

MFG

HELICOPTER PARTS SERVICE INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MINIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL LENGTH: 0.145 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MINIMUM REVERSE BREAKDOWN VOLTAGE, DC

A5649-2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010484162

NSN

5961-01-048-4162

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A5649-2

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010484162

NSN

5961-01-048-4162

MFG

SCIENTIFIC-ATLANTA INC SIGNAL PROCESSING SYSTEMS DIV

Description

COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR

A5656-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010484163

NSN

5961-01-048-4163

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A5656-1

SEMICONDUCTOR DEVICE SET

NSN, MFG P/N

5961010484163

NSN

5961-01-048-4163

MFG

SCIENTIFIC-ATLANTA INC SIGNAL PROCESSING SYSTEMS DIV

5082-2730

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

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5082-2730

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

MFG

AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.2 MILLIMETERS NOMINAL
OVERALL WIDTH: 0.2 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE

6095959-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

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6095959-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

MFG

LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.2 MILLIMETERS NOMINAL
OVERALL WIDTH: 0.2 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE

DMS 82117B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

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DMS 82117B

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484720

NSN

5961-01-048-4720

MFG

DLA LAND AND MARITIME

Description

CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: PRESS FIT
OVERALL HEIGHT: 0.1 MILLIMETERS MAXIMUM
OVERALL LENGTH: 0.2 MILLIMETERS NOMINAL
OVERALL WIDTH: 0.2 MILLIMETERS NOMINAL
POWER RATING PER CHARACTERISTIC: 25.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 FLANGE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.0 MAXIMUM FORWARD VOLTAGE, AVERAGE

13-808627-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

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13-808627-2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: AL35930-31
MANUFACTURERS CODE: 27338
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
OVERALL HEIGHT: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: END CAP; TERMINAL TYPE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

AL35930-31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

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AL35930-31

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

MFG

SIGNAL TECHNOLOGY CORPORATION DBA STC MICROWAVE SYSTEMS DIV SIGNAL TECHNOLOGY CORPORATION USE CAGE CODE 33025 FOR CATALOGING.

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: AL35930-31
MANUFACTURERS CODE: 27338
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
OVERALL HEIGHT: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: END CAP; TERMINAL TYPE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

MDI60203

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

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MDI60203

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484721

NSN

5961-01-048-4721

MFG

HELICOPTER PARTS SERVICE INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MICROAMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DESIGN CONTROL REFERENCE: AL35930-31
MANUFACTURERS CODE: 27338
OVERALL DIAMETER: 0.118 INCHES MINIMUM AND 0.122 INCHES MAXIMUM
OVERALL HEIGHT: 0.090 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: END CAP; TERMINAL TYPE
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 70.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC

MA41409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484883

NSN

5961-01-048-4883

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MA41409

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484883

NSN

5961-01-048-4883

MFG

M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM

W41292F6200K2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484883

NSN

5961-01-048-4883

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W41292F6200K2

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010484883

NSN

5961-01-048-4883

MFG

EADS DEUTSCHLAND GMBH DEFENCE ELECTR ONICS ABTEILUNG VELB6

244350-000

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010485236

NSN

5961-01-048-5236

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244350-000

SEMICONDUCTOR DEVICE ASSEMBLY

NSN, MFG P/N

5961010485236

NSN

5961-01-048-5236

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

SCHF12500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010485237

NSN

5961-01-048-5237

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SCHF12500

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961010485237

NSN

5961-01-048-5237

MFG

SEMTECH CORPUS CHRISTI.A. DE C.V. REYNOSA FACILITY

Description

OVERALL DIAMETER: 0.500 INCHES NOMINAL
OVERALL LENGTH: 2.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD