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5962-01-115-0379
20 Products
134699-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150379
NSN
5962-01-115-0379
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NOR, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
SN54S258J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011149972
NSN
5962-01-114-9972
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 MULTIPLEXER AND 4 SELECTOR, DATA
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
019221001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011149973
NSN
5962-01-114-9973
MFG
SERVO CORPORATION OF AMERICA
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
SN54S134J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011149973
NSN
5962-01-114-9973
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
303165-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150065
NSN
5962-01-115-0065
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
9N06DMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150065
NSN
5962-01-115-0065
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
MC5406BCBJ
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150065
NSN
5962-01-115-0065
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
S5406F/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150065
NSN
5962-01-115-0065
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SNC5406J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150065
NSN
5962-01-115-0065
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: BURN IN, MIL-STD-883, CLASS B AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 23.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
314048-1
MICROCIRCUIT
NSN, MFG P/N
5962011150076
NSN
5962-01-115-0076
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
MICROCIRCUIT
Related Searches:
4002BDMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150372
NSN
5962-01-115-0372
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/BUFFERED OUTPUT AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 48.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
4014397-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150374
NSN
5962-01-115-0374
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
4014666-167
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150374
NSN
5962-01-115-0374
MFG
L-3 COMMUNICATIONS CORPORATION DIV LINK SIMULATION & TRAINING DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
N82S185-F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150374
NSN
5962-01-115-0374
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.882 INCHES MINIMUM AND 0.925 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
583R306H01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150375
NSN
5962-01-115-0375
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
DESIGN CONTROL REFERENCE: 583R306H01
FEATURES PROVIDED: RESETTABLE AND BIPOLAR
III END ITEM IDENTIFICATION: F-16
MANUFACTURERS CODE: 97942
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
08660-80021
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011150377
NSN
5962-01-115-0377
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.125 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
1816-0422
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011150377
NSN
5962-01-115-0377
MFG
HEWLETT PACKARD CO
Description
BODY HEIGHT: 0.125 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
DMS 87130B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011150377
NSN
5962-01-115-0377
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.125 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011150377
NSN
5962-01-115-0377
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.125 INCHES MAXIMUM
BODY LENGTH: 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
Related Searches:
460307-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011150379
NSN
5962-01-115-0379
MFG
BAE SYSTEMS CONTROLS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 LATCH, NOR, R/S
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
