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5962-01-214-8833
20 Products
8103502RX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148833
NSN
5962-01-214-8833
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
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G311478-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148833
NSN
5962-01-214-8833
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
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M38510/50302BRA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148833
NSN
5962-01-214-8833
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
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ROM/PROM FAMILY 105
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148833
NSN
5962-01-214-8833
ROM/PROM FAMILY 105
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148833
NSN
5962-01-214-8833
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-8 MIL-M-38510
FEATURES PROVIDED: BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 WATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148834
NSN
5962-01-214-8834
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012148834
NSN
5962-01-214-8834
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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156-1153-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
MICROCIRCUIT,DIGITAL
Related Searches:
93634
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
MTS MICROELECTRONICS INC DBA M T S MICRO ELECTRONICS
Description
MICROCIRCUIT,DIGITAL
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B4012570-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND
Description
MICROCIRCUIT,DIGITAL
Related Searches:
L1A1804
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
LSI LOGIC CORP
Description
MICROCIRCUIT,DIGITAL
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MM5740AAC/D/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MM5740AAC/D/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
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T537022902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962012149064
NSN
5962-01-214-9064
MFG
LOCKHEED MARTIN LIBRASCOPE CORP
Description
MICROCIRCUIT,DIGITAL
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ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
ROM/PROM FAMILY 005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
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S82S129F/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
MFG
PHILIPS SEMICONDUCTORS INC
Description
MICROCIRCUIT,MEMORY
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SM-A-813886
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
MICROCIRCUIT,MEMORY
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SM-A-838651-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
MICROCIRCUIT,MEMORY
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SM-A-838986-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149065
NSN
5962-01-214-9065
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
MICROCIRCUIT,MEMORY
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ROM/PROM FAMILY005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149066
NSN
5962-01-214-9066
ROM/PROM FAMILY005
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149066
NSN
5962-01-214-9066
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
S82S129F/883B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149066
NSN
5962-01-214-9066
MFG
PHILIPS SEMICONDUCTORS INC
Description
MICROCIRCUIT,MEMORY
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SM-A-813891
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962012149066
NSN
5962-01-214-9066
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GENERAL DYNAMICS C4 SYSTEMS INC.
Description
MICROCIRCUIT,MEMORY
