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5962-01-372-7430

20 Products

1372FW1060-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013727430

NSN

5962-01-372-7430

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1372FW1060-001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013727430

NSN

5962-01-372-7430

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 1.260 INCHES MINIMUM AND 1.280 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-9 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: 1372FW1060-001
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND PROGRAMMED AND W/CLOCK
III END ITEM IDENTIFICATION: EO LOROPS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 22 INPUT
MANUFACTURERS CODE: 72314
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: PAL
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,PROGRAMMED
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE; ALTERED ITEM,MAKE FROM 5962-8686401LX,CHECKSUM 0407; NHA PN 1372AE1062,5998-01-358-7044 CI

SV258-0107-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013727431

NSN

5962-01-372-7431

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SV258-0107-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013727431

NSN

5962-01-372-7431

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 64
BODY HEIGHT: 0.180 INCHES MINIMUM AND 0.200 INCHES MAXIMUM
BODY LENGTH: 0.820 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN CONTROL REFERENCE: SV258-0107-010
FEATURES PROVIDED: COMPATIBLE CMOS AND CASCADABLE AND ELECTROSTATIC SENSITIVE AND RADIATION HARDENED AND BURN IN, MIL-STD-883, CLASS B AND TESTED TO MIL-STD-883 AND SELECTED ITEM
III END ITEM IDENTIFICATION: MILSTAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
MANUFACTURERS CODE: 95105
MEMORY DEVICE TYPE: FIRST-IN FIRST-OUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT,DIGITAL,FIFO
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENS/CRITICAL HARDNESS ITEM;

97942-581R817H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727624

NSN

5962-01-372-7624

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97942-581R817H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727624

NSN

5962-01-372-7624

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DBA ELECTRONIC SYSTEMS

4PD449C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727625

NSN

5962-01-372-7625

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4PD449C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727625

NSN

5962-01-372-7625

MFG

NEC ELECTRONICS USA INC MICROCOMPUTER DIV ADVANCED CIRCUITS ENGINEERING

HCF4015BM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727748

NSN

5962-01-372-7748

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HCF4015BM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727748

NSN

5962-01-372-7748

MFG

STMICROELECTRONICS INC

Description

DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, SERIAL IN, PARALLEL OUT
FEATURES PROVIDED: STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN

HCF4020BM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727749

NSN

5962-01-372-7749

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HCF4020BM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013727749

NSN

5962-01-372-7749

MFG

STMICROELECTRONICS INC

Description

DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: STATIC OPERATION AND W/RIPPLE CARRY AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 14 STAGE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 16 PIN

80486DX-33

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728012

NSN

5962-01-372-8012

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80486DX-33

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728012

NSN

5962-01-372-8012

MFG

INTEL CORP SALES OFFICE FSO06

Description

DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS

A80486DX-33

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728012

NSN

5962-01-372-8012

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A80486DX-33

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728012

NSN

5962-01-372-8012

MFG

INTEL CORP SALES OFFICE FSO06

Description

DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: PIN GRID ARRAY
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS

526-3001-6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728013

NSN

5962-01-372-8013

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526-3001-6

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728013

NSN

5962-01-372-8013

MFG

GCH SYSTEMS INC

ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728013

NSN

5962-01-372-8013

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ROM/PROM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962013728013

NSN

5962-01-372-8013

MFG

DLA LAND AND MARITIME

42238-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728181

NSN

5962-01-372-8181

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42238-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728181

NSN

5962-01-372-8181

MFG

RAYTHEON COMPANY DBA RAYTHEON

42239-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728182

NSN

5962-01-372-8182

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42239-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728182

NSN

5962-01-372-8182

MFG

RAYTHEON COMPANY DBA RAYTHEON

42240-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728183

NSN

5962-01-372-8183

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42240-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728183

NSN

5962-01-372-8183

MFG

RAYTHEON COMPANY DBA RAYTHEON

42415-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728184

NSN

5962-01-372-8184

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42415-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728184

NSN

5962-01-372-8184

MFG

RAYTHEON COMPANY DBA RAYTHEON

42416-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728185

NSN

5962-01-372-8185

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42416-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728185

NSN

5962-01-372-8185

MFG

RAYTHEON COMPANY DBA RAYTHEON

42417-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728186

NSN

5962-01-372-8186

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42417-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728186

NSN

5962-01-372-8186

MFG

RAYTHEON COMPANY DBA RAYTHEON

42418-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728187

NSN

5962-01-372-8187

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42418-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728187

NSN

5962-01-372-8187

MFG

RAYTHEON COMPANY DBA RAYTHEON

42419-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728188

NSN

5962-01-372-8188

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42419-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728188

NSN

5962-01-372-8188

MFG

RAYTHEON COMPANY DBA RAYTHEON

42420-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728189

NSN

5962-01-372-8189

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42420-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728189

NSN

5962-01-372-8189

MFG

RAYTHEON COMPANY DBA RAYTHEON

42421-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728190

NSN

5962-01-372-8190

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42421-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962013728190

NSN

5962-01-372-8190

MFG

RAYTHEON COMPANY DBA RAYTHEON