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5962-01-506-3741
20 Products
356A1409
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063741
NSN
5962-01-506-3741
MFG
BAE SYSTEMS CONTROLS INC.
Description
III END ITEM IDENTIFICATION: USED IN 1146472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
MEMORY CAPACITY: DEVICE DENSITY X16 (16-MBIT), ACCESS SPEED 95NS
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: -40.0 TO 125.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: 3 VOLT FAST BOOT BLOCK FLASH MEMORY
TERMINAL TYPE AND QUANTITY: 56 BEAM LEAD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.7 VOLTS MINIMUM INPUT AND 3.6 VOLTS MAXIMUM INPUT
Related Searches:
356A1277P3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063504
NSN
5962-01-506-3504
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMAABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1277P3.POF TO PROGRAM 356A1409P10 OR EPM7128STC100-7F
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1409-10
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063504
NSN
5962-01-506-3504
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMAABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1277P3.POF TO PROGRAM 356A1409P10 OR EPM7128STC100-7F
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1409P10
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063504
NSN
5962-01-506-3504
MFG
BAE SYSTEMS CONTROLS INC.
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMAABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1277P3.POF TO PROGRAM 356A1409P10 OR EPM7128STC100-7F
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063504
NSN
5962-01-506-3504
MFG
DLA LAND AND MARITIME
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: USED IN 114E647G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
MEMORY CAPACITY: 2500 USABLE GATES
MEMORY DEVICE TYPE: EEPROM
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: MAX 7000A PROGRAMMAABLE LOGIC DEVICE
SPECIAL FEATURES: 7 SPEED GRADE, USE 356A1277P3.POF TO PROGRAM 356A1409P10 OR EPM7128STC100-7F
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL TYPE AND QUANTITY: 100 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -2.0 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
356A1400P43
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063585
NSN
5962-01-506-3585
MFG
BAE SYSTEMS CONTROLS INC.
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL INPUT
Related Searches:
IS82C52
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063585
NSN
5962-01-506-3585
MFG
INTERSIL CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 1 CONTROL
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 28 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS NOMINAL INPUT
Related Searches:
356A1400P16
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063593
NSN
5962-01-506-3593
MFG
BAE SYSTEMS CONTROLS INC.
Description
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NONINVERTING
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
MC74ACT244DW
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063593
NSN
5962-01-506-3593
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NONINVERTING
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
SN74ACT244DW
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063593
NSN
5962-01-506-3593
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NONINVERTING
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADLESS FLAT PACK
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 20 LEADLESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
356A1400P9
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063695
NSN
5962-01-506-3695
MFG
BAE SYSTEMS CONTROLS INC.
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 14 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.0 VOLTS MINIMUM TOTAL SUPPLY AND 6.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
MC74AC32D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063695
NSN
5962-01-506-3695
MFG
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC DBA SEMI CONDUCTOR COMPONENTS INDUSTRIES DIV CORPORATE HEADQUARTERS
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 14 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.0 VOLTS MINIMUM TOTAL SUPPLY AND 6.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
SN74AC32D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063695
NSN
5962-01-506-3695
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
TERMINAL TYPE AND QUANTITY: 14 GULLWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 2.0 VOLTS MINIMUM TOTAL SUPPLY AND 6.0 VOLTS MAXIMUM TOTAL SUPPLY
Related Searches:
356A1409P26
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063715
NSN
5962-01-506-3715
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.530 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: MEMORY 1 MEGABIT (128K X 8 BIT)
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNIFORM SECTOR FLASH MEMORY
SPECIAL FEATURES: USE 361A9020P3.DAT TO PROGRAM 356A1409P26 OR AM29F010B-90JI OR AM29F010B-90JC
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
361A9020P3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063715
NSN
5962-01-506-3715
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.530 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: MEMORY 1 MEGABIT (128K X 8 BIT)
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNIFORM SECTOR FLASH MEMORY
SPECIAL FEATURES: USE 361A9020P3.DAT TO PROGRAM 356A1409P26 OR AM29F010B-90JI OR AM29F010B-90JC
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
361A9020P3.DAT
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063715
NSN
5962-01-506-3715
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.530 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: MEMORY 1 MEGABIT (128K X 8 BIT)
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNIFORM SECTOR FLASH MEMORY
SPECIAL FEATURES: USE 361A9020P3.DAT TO PROGRAM 356A1409P26 OR AM29F010B-90JI OR AM29F010B-90JC
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
AM29F010B-90JC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063715
NSN
5962-01-506-3715
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.530 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: MEMORY 1 MEGABIT (128K X 8 BIT)
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNIFORM SECTOR FLASH MEMORY
SPECIAL FEATURES: USE 361A9020P3.DAT TO PROGRAM 356A1409P26 OR AM29F010B-90JI OR AM29F010B-90JC
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
AM29F010B-90JI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962015063715
NSN
5962-01-506-3715
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.530 INCHES MINIMUM AND 0.580 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.225 INCHES MAXIMUM
III END ITEM IDENTIFICATION: USED IN 114E6472G1
INCLOSURE CONFIGURATION: LEADED CHIP CARRIER
INCLOSURE MATERIAL: PLASTIC
MEMORY CAPACITY: MEMORY 1 MEGABIT (128K X 8 BIT)
MEMORY DEVICE TYPE: EPROM
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
PART NAME ASSIGNED BY CONTROLLING AGENCY: UNIFORM SECTOR FLASH MEMORY
SPECIAL FEATURES: USE 361A9020P3.DAT TO PROGRAM 356A1409P26 OR AM29F010B-90JI OR AM29F010B-90JC
TERMINAL TYPE AND QUANTITY: 32 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL POWER SOURCE
Related Searches:
356A1469P1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063720
NSN
5962-01-506-3720
MFG
BAE SYSTEMS CONTROLS INC.
Description
BODY HEIGHT: 0.098 INCHES NOMINAL
BODY LENGTH: 0.705 INCHES NOMINAL
BODY WIDTH: 0.295 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-013AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
DESIGN FUNCTION AND QUANTITY: 14 CLOCK, LOGIC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 89954/114E6472G1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, PLASTIC ENCAPSULATED (SURFACE MOUNT)PROCUREMENT ANDSELECTION REQUIREMENTS
SPECIAL FEATURES: CLOCK SYNTHESIZER/DRIVER, MAX DIGITAL INPUT VOLTAGE IS SUPPLY VOLTAGE PLUS 0.5V, NOMINAL SUPPLY VOLTAGES +3.3V OR +5.0V, MULTIPLE CLOCK OUTPUTS MEET REQUIREMENTS OFMOST PENTIUM MOTHERBOARDS
SPECIAL TEST FEATURES: APPROVED PEM TEST FACILITIES: PIKES PEAK TEST LABS, INC. AN
Related Searches:
CY2254ASC-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962015063720
NSN
5962-01-506-3720
MFG
CYPRESS SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.098 INCHES NOMINAL
BODY LENGTH: 0.705 INCHES NOMINAL
BODY WIDTH: 0.295 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: MS-013AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
CRITICALITY CODE JUSTIFICATION: CBBL
DESIGN FUNCTION AND QUANTITY: 14 CLOCK, LOGIC
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: 89954/114E6472G1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
PART NAME ASSIGNED BY CONTROLLING AGENCY: MICROCIRCUIT, DIGITAL, PLASTIC ENCAPSULATED (SURFACE MOUNT)PROCUREMENT ANDSELECTION REQUIREMENTS
SPECIAL FEATURES: CLOCK SYNTHESIZER/DRIVER, MAX DIGITAL INPUT VOLTAGE IS SUPPLY VOLTAGE PLUS 0.5V, NOMINAL SUPPLY VOLTAGES +3.3V OR +5.0V, MULTIPLE CLOCK OUTPUTS MEET REQUIREMENTS OFMOST PENTIUM MOTHERBOARDS
SPECIAL TEST FEATURES: APPROVED PEM TEST FACILITIES: PIKES PEAK TEST LABS, INC. AN
