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5980-00-148-4459

20 Products

00000581-131

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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00000581-131

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

AMPEX SYSTEMS CORP

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

110506501

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

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110506501

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

MFG

MOMENTUM TECHNOLOGIES INC

353107003

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

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353107003

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

MFG

MOMENTUM TECHNOLOGIES INC

A32925

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

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A32925

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

LS459-2

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

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LS459-2

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001131302

NSN

5980-00-113-1302

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

7657-225

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001227816

NSN

5980-00-122-7816

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7657-225

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001227816

NSN

5980-00-122-7816

MFG

RECON/OPTICAL INC .

6-75000

PHOTOELECTRIC CELL

NSN, MFG P/N

5980001338733

NSN

5980-00-133-8733

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6-75000

PHOTOELECTRIC CELL

NSN, MFG P/N

5980001338733

NSN

5980-00-133-8733

MFG

LCT ELECTRONICS

Description

FLUCTUATION RESPONSE PER SECOND: 10000.0
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SPECTRAL RESPONSE STANDARD CURVE DESIGNATION: S-3
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
USAGE DESIGN: INDOOR

CL703CL

PHOTOELECTRIC CELL

NSN, MFG P/N

5980001338733

NSN

5980-00-133-8733

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CL703CL

PHOTOELECTRIC CELL

NSN, MFG P/N

5980001338733

NSN

5980-00-133-8733

MFG

CLAIREX ELECTRONICS DIV OF CLAIREX CORP

Description

FLUCTUATION RESPONSE PER SECOND: 10000.0
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.360 INCHES NOMINAL
OVERALL LENGTH: 0.180 INCHES NOMINAL
SPECTRAL RESPONSE STANDARD CURVE DESIGNATION: S-3
TERMINAL QUANTITY: 2
TERMINAL TYPE: WIRE LEAD
USAGE DESIGN: INDOOR

94068000

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001392382

NSN

5980-00-139-2382

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94068000

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001392382

NSN

5980-00-139-2382

MFG

CONTROL DATA SYSTEMS INC CONTRACTS DEPT

Description

DESIGN CONTROL REFERENCE: LS634
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

LS634

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001392382

NSN

5980-00-139-2382

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LS634

SEMICONDUCTOR DEVICE,PHOTO

NSN, MFG P/N

5980001392382

NSN

5980-00-139-2382

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: LS634
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 01295
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:

2883817-2

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

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2883817-2

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

Description

CHARACTER QUANTITY PER LINE: 1
CHARACTER TYPE: NUMERIC
CURRENT RATING: 120.0 MILLIAMPERES NOMINAL
DISPLAY TYPE: LIGHT EMITTING DIODE
LINE QUANTITY: 1
OUTPUT LOGIC FORM: DIODE LOGIC
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
SPECIAL FEATURES: PLUS OR MINUS SIGN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING: 4.2 VOLTS NOMINAL

5082-7018

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

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5082-7018

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CHARACTER QUANTITY PER LINE: 1
CHARACTER TYPE: NUMERIC
CURRENT RATING: 120.0 MILLIAMPERES NOMINAL
DISPLAY TYPE: LIGHT EMITTING DIODE
LINE QUANTITY: 1
OUTPUT LOGIC FORM: DIODE LOGIC
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
SPECIAL FEATURES: PLUS OR MINUS SIGN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING: 4.2 VOLTS NOMINAL

SC6250-0014-1

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

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SC6250-0014-1

DISPLAY,OPTOELECTRONIC

NSN, MFG P/N

5980001459432

NSN

5980-00-145-9432

MFG

DRS ICAS, LLC

Description

CHARACTER QUANTITY PER LINE: 1
CHARACTER TYPE: NUMERIC
CURRENT RATING: 120.0 MILLIAMPERES NOMINAL
DISPLAY TYPE: LIGHT EMITTING DIODE
LINE QUANTITY: 1
OUTPUT LOGIC FORM: DIODE LOGIC
OVERALL HEIGHT: 0.295 INCHES NOMINAL
OVERALL LENGTH: 1.060 INCHES NOMINAL
OVERALL WIDTH: 0.390 INCHES NOMINAL
SPECIAL FEATURES: PLUS OR MINUS SIGN
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING: 4.2 VOLTS NOMINAL

150-1000-00

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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150-1000-00

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

1990-0323

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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1990-0323

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

2229-00

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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2229-00

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

DECISION DATA COMPUTER CORP

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

314386-1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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314386-1

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

353-2069-010

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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353-2069-010

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

CM4-50A

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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CM4-50A

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC

CMD50

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

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CMD50

LIGHT EMITTING DIODE

NSN, MFG P/N

5980001484459

NSN

5980-00-148-4459

MFG

CHICAGO MINIATURE LIGHTING LLC DBA CHICAGO MINIATURE OPTOELECTRON

Description

CURRENT RATING PER CHARACTERISTIC: 40.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: POINT CONTACT
INTERNAL JUNCTION CONFIGURATION: PN
MOUNTING METHOD: TERMINAL
POWER RATING PER CHARACTERISTIC: 80.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: GALLIUM ARSENIDE PHOSPHIDE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 3.0 MAXIMUM REVERSE VOLTAGE, DC