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5961-00-077-2119
20 Products
2N4101
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
2N4101
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE OR 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
10653117
TRANSISTOR
NSN, MFG P/N
5961000771841
NSN
5961-00-077-1841
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
2N3646
TRANSISTOR
NSN, MFG P/N
5961000771841
NSN
5961-00-077-1841
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
2N3646A
TRANSISTOR
NSN, MFG P/N
5961000771841
NSN
5961-00-077-1841
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.215 INCHES NOMINAL
OVERALL LENGTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 0.5 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE, DC WITH BASE SHORT-CIRCUITED TO EMITTER AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE,
~1: STATIC, COLLECTOR OPEN
Related Searches:
10548229
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: U/O GUN,AA,TOWED,20-MM,XM167
Related Searches:
5761000772113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
5761000772113
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: U/O GUN,AA,TOWED,20-MM,XM167
Related Searches:
DZ870825A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: U/O GUN,AA,TOWED,20-MM,XM167
Related Searches:
SES629
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
MFG
SEMITRONICS CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: U/O GUN,AA,TOWED,20-MM,XM167
Related Searches:
SZ11822
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772113
NSN
5961-00-077-2113
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: U/O GUN,AA,TOWED,20-MM,XM167
Related Searches:
10548786
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
U S ARMY ARMAMENT RESEARCH & DEVELOPMENT COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
505-239
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
PLATH GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
5961000772115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
5961000772115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
9138C3010
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
G674
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
HAB020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961000772115
NSN
5961-00-077-2115
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.300 INCHES NOMINAL
OVERALL LENGTH: 0.375 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.812 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
40555
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE OR 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
5961000772119
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
5961000772119
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
MFG
E.C.A ETABLISSEMENT CENTRAL DES APPROVISIONNEMENTS DES FORCES ARMEES
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE OR 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
60050
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE OR 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
9138C3012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
9138C3012
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961000772119
NSN
5961-00-077-2119
MFG
LOCKHEED CORP LOCKHEED ELECTRONICS CO INC
Description
CURRENT RATING PER CHARACTERISTIC: 2.00 AMPERES MAXIMUM GATE CURRENT AND 60.00 AMPERES MAXIMUM AVERAGE ON-STATE CURRENT, 180 DEGREES CONDUCTION ANGLE, AVERAGE OVER A FULL 60-HZ CYCLE
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 100.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM GATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.360 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 1 CASE OR 2 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 600.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
850203G1
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961000775649
NSN
5961-00-077-5649
MFG
SUPERIOR ELECTRIC HOLDING GROUP LLC DBA SUPERIOR ELECTRIC DIV DANAHER SENSORS & CONTROLS
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
