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5961-00-327-8345
20 Products
1N940B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003278345
NSN
5961-00-327-8345
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
S6458-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003270828
NSN
5961-00-327-0828
S6458-2
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003270828
NSN
5961-00-327-0828
MFG
ST-SEMICON INC
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
MATERIAL: SILICON
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.385 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
OVERALL WIDTH: 1.255 INCHES MAXIMUM
SPECIAL FEATURES: ANY ACCEPTABLE LOAD TYPE; 70 VOLTRMS AND 12 AMPS DC; ENCAPSULATED; HUMIDITY RESISTANT; GROUNDED TERMINAL NOT INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB, SOLDER LUG
Related Searches:
120-388
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003271081
NSN
5961-00-327-1081
120-388
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003271081
NSN
5961-00-327-1081
MFG
AUTOMATIC SWITCH COMPANY
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: GS120-388C
MANUFACTURERS CODE: 04845
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN TERMINAL
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 2.750 INCHES MAXIMUM
OVERALL WIDTH: 2.750 INCHES MAXIMUM
SPECIAL FEATURES: INDUCTIVE LOAD TYPE; 250 VOLTS RMS AND 6 AMPS DC; HERMETICALLY SEALED; INTERNAL QUICK DISCONNECT TERMINALS INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
Related Searches:
JHP133-783
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003271081
NSN
5961-00-327-1081
JHP133-783
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961003271081
NSN
5961-00-327-1081
MFG
HOLLINGSWORTH JOHN R CO
Description
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
DESIGN CONTROL REFERENCE: GS120-388C
MANUFACTURERS CODE: 04845
MATERIAL: SILICON
MOUNTING METHOD: PLUG-IN TERMINAL
OVERALL HEIGHT: 1.000 INCHES MAXIMUM
OVERALL LENGTH: 2.750 INCHES MAXIMUM
OVERALL WIDTH: 2.750 INCHES MAXIMUM
SPECIAL FEATURES: INDUCTIVE LOAD TYPE; 250 VOLTS RMS AND 6 AMPS DC; HERMETICALLY SEALED; INTERNAL QUICK DISCONNECT TERMINALS INCLUDED
TERMINAL TYPE AND QUANTITY: 4 TAB W/SCREW
Related Searches:
850217
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003273303
NSN
5961-00-327-3303
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DBA NORTHROP GRMMAN NORDEN SYSTEMS DIV NAVAL AND MARINE SYSTEMS DIVISION
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: PNP ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.370 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 3.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BAS
Related Searches:
232528-000
TRANSISTOR
NSN, MFG P/N
5961003274551
NSN
5961-00-327-4551
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
DESIGN CONTROL REFERENCE: 232528-000
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
THE MANUFACTURERS DATA:
Related Searches:
226403-703
TRANSISTOR
NSN, MFG P/N
5961003274559
NSN
5961-00-327-4559
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226403-703
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
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STA8315
TRANSISTOR
NSN, MFG P/N
5961003274559
NSN
5961-00-327-4559
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226403-703
OVERALL HEIGHT: 0.380 INCHES MAXIMUM
OVERALL LENGTH: 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
200985-002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274560
NSN
5961-00-327-4560
200985-002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274560
NSN
5961-00-327-4560
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200985 DRAWING
VOLTAGE RATI
Related Searches:
FSA1181
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274560
NSN
5961-00-327-4560
FSA1181
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274560
NSN
5961-00-327-4560
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 3 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: COMMON ANODE
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200985 DRAWING
VOLTAGE RATI
Related Searches:
200985-006
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274561
NSN
5961-00-327-4561
200985-006
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274561
NSN
5961-00-327-4561
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: MATRIX ASSY
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200985 DRAWING
VOLTAGE RATING IN VOLTS PE
Related Searches:
FSA1185
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274561
NSN
5961-00-327-4561
FSA1185
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003274561
NSN
5961-00-327-4561
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
CURRENT RATING PER CHARACTERISTIC: 200.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 300.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 600.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT ALL SEMICONDUCTOR DEVICE DIODE
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: MATRIX ASSY
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81413-200985 DRAWING
VOLTAGE RATING IN VOLTS PE
Related Searches:
200799-701
TRANSISTOR
NSN, MFG P/N
5961003274570
NSN
5961-00-327-4570
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
62414
TRANSISTOR
NSN, MFG P/N
5961003274570
NSN
5961-00-327-4570
MFG
INTERSIL CORPORATION
Description
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
Related Searches:
232527-000
TRANSISTOR
NSN, MFG P/N
5961003274571
NSN
5961-00-327-4571
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
STA8049
TRANSISTOR
NSN, MFG P/N
5961003274571
NSN
5961-00-327-4571
MFG
SILICON TRANSISTOR CORP SUB OF BBF INC
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL DIAMETER: 0.830 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
Related Searches:
BFX18
TRANSISTOR
NSN, MFG P/N
5961003278324
NSN
5961-00-327-8324
MFG
VISHAY
Description
DESIGN CONTROL REFERENCE: BFX18
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: K0004
OVERALL DIAMETER: 6.860 MILLIMETERS NOMINAL
OVERALL HEIGHT: 6.330 MILLIMETERS NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N940BA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003278345
NSN
5961-00-327-8345
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
932148-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003278345
NSN
5961-00-327-8345
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES NOMINAL VOLTAGE REGULATOR DIODE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE
VOLTAGE TOLERANCE IN PERCENT: -5.0 TO 5.0
Related Searches:
1N3862
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003279465
NSN
5961-00-327-9465
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 AMPERES MAXIMUM FORWARD CURRENT, AVERAGE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.115 INCHES MINIMUM AND 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.055 INCHES MINIMUM AND 0.075 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIFICATION/STANDARD DATA: 80131-RELEASE4006 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 0.4 MAXIMUM FORWARD VOLTAGE, AVERAGE
