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5961-01-375-4875
20 Products
969-0534
TRANSISTOR
NSN, MFG P/N
5961013754875
NSN
5961-01-375-4875
MFG
ZENITH DATA SYSTEMS CORP
Description
TRANSISTOR
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1041611Q00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753327
NSN
5961-01-375-3327
1041611Q00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753327
NSN
5961-01-375-3327
MFG
MBDA FRANCE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
622860
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753327
NSN
5961-01-375-3327
MFG
LING DYNAMIC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1041628N00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753328
NSN
5961-01-375-3328
1041628N00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753328
NSN
5961-01-375-3328
MFG
MBDA FRANCE
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
622870
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753328
NSN
5961-01-375-3328
MFG
LING DYNAMIC SYSTEMS INC
Description
SEMICONDUCTOR DEVICE,DIODE
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1582935-2
TRANSISTOR
NSN, MFG P/N
5961013753618
NSN
5961-01-375-3618
MFG
ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE
Description
III CUBIC MEASURE: 0.025 CUBIC INCHES
INCLOSURE MATERIAL: METAL OR PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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FF624
TRANSISTOR
NSN, MFG P/N
5961013753619
NSN
5961-01-375-3619
MFG
CRYSTALONICS INC.
Description
(NON-CORE DATA) SUPPLEMENTARY FEATURES: COGNIZANT SERVICE - UNITED KINGDOM ROYAL AIR FORCE
III END ITEM IDENTIFICATION: DETECTOR TORQUE METER,CRYSTALONICS INC
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1854-0719
TRANSISTOR
NSN, MFG P/N
5961013753620
NSN
5961-01-375-3620
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III CUBIC MEASURE: 0.034 CUBIC INCHES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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BFQ63
TRANSISTOR
NSN, MFG P/N
5961013753620
NSN
5961-01-375-3620
MFG
PHILIPS ELECTRONICS NEDERLAND BV
Description
CURRENT RATING PER CHARACTERISTIC: 75.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
III CUBIC MEASURE: 0.034 CUBIC INCHES
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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89026-2N7228
TRANSISTOR
NSN, MFG P/N
5961013753621
NSN
5961-01-375-3621
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 48.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 12.00 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7228
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFI
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JANTX2N7228
TRANSISTOR
NSN, MFG P/N
5961013753621
NSN
5961-01-375-3621
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 12.00 AMPERES MAXIMUM DRAIN CURRENT AND 48.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK AND 12.00 AMPERES MAXIMUM SOURCE CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N7228
INCLOSURE MATERIAL: METAL AND GLASS
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-254AA
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/592
OVERALL HEIGHT: 0.249 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.790 INCHES MINIMUM AND 0.800 INCHES MAXIMUM
OVERALL WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFI
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1582926-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753622
NSN
5961-01-375-3622
MFG
ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE
Description
III CUBIC MEASURE: 0.015 CUBIC INCHES
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.130 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
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01011785
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753623
NSN
5961-01-375-3623
MFG
COMMUNICATIONS & POWER INDUSTRIES INC. DBA SATCOM DIVISION DIV SATCOM DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III CUBIC MEASURE: 0.051 CUBIC INCHES
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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SDR3KTXV
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013753623
NSN
5961-01-375-3623
MFG
SOLID STATE DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 50-HZ CYCLE
FEATURES PROVIDED: ELECTROSTATIC SENSITIVE
III CUBIC MEASURE: 0.051 CUBIC INCHES
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.250 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
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29-25100-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013753624
NSN
5961-01-375-3624
29-25100-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013753624
NSN
5961-01-375-3624
MFG
COMPAQ FEDERAL LLC
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 2.000 OUNCES
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
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53535342
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013753624
NSN
5961-01-375-3624
53535342
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961013753624
NSN
5961-01-375-3624
MFG
RICOH CO. LTD
Description
(NON-CORE DATA) UNPACKAGED UNIT WEIGHT: 2.000 OUNCES
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: SLOT
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 2.500 INCHES NOMINAL
OVERALL WIDTH: 1.000 INCHES NOMINAL
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MFE9200
TRANSISTOR
NSN, MFG P/N
5961013754944
NSN
5961-01-375-4944
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.220 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 200.0 NOMINAL BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
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112092
TRANSISTOR
NSN, MFG P/N
5961013755126
NSN
5961-01-375-5126
MFG
QUALIDYNE SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.595 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 83.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 7.0 MAXI
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D44VH10
TRANSISTOR
NSN, MFG P/N
5961013755126
NSN
5961-01-375-5126
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 15.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: W/HEAT SINK
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: TERMINAL AND UNTHREADED HOLE
OVERALL HEIGHT: 0.595 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.405 INCHES MAXIMUM
OVERALL WIDTH: 0.160 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 83.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 80.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 100.0 MAXIMUM COLLECTOR-TO-EMITTER, WITH VOLTAGE BETWEEN BASE AND EMITTER AND 7.0 MAXI
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IRFBC30
TRANSISTOR
NSN, MFG P/N
5961013755452
NSN
5961-01-375-5452
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 3.60 AMPERES NOMINAL DRAIN CURRENT
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-220AB
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 1.114 INCHES MINIMUM AND 1.144 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MINIMUM AND 0.415 INCHES MAXIMUM
OVERALL WIDTH: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 74.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 NOMINAL DRAIN TO SOURCE VOLTAGE
