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5961-00-353-6641
20 Products
075011760
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003536641
NSN
5961-00-353-6641
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION
Description
DESIGN CONTROL REFERENCE: 076011760
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 3.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 7.200 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
4006582-467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
4006582-467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE - ALBUQUERQUE
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLT
Related Searches:
SEN-2510-467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
SEN-2510-467
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLT
Related Searches:
SHQ1918H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
SHQ1918H
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531239
NSN
5961-00-353-1239
MFG
FREESCALE SEMICONDUCTOR INC.
Description
COMPONENT NAME AND QUANTITY: 4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.390 INCHES MAXIMUM
OVERALL LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
OVERALL WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2000.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.115 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 14 PIN
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -40.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND -5.0 MAXIMUM EMITTER TO BASE VOLT
Related Searches:
580R104H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531385
NSN
5961-00-353-1385
580R104H01
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531385
NSN
5961-00-353-1385
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
8300
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531385
NSN
5961-00-353-1385
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
MS1359
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531385
NSN
5961-00-353-1385
MS1359
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961003531385
NSN
5961-00-353-1385
MFG
SOLITRON DEVICES INC.
Description
SEMICONDUCTOR DEVICES,UNITIZED
Related Searches:
2N6116
TRANSISTOR
NSN, MFG P/N
5961003532257
NSN
5961-00-353-2257
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: UNIJUNCTION
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6275 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
0AZ204
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003532394
NSN
5961-00-353-2394
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT
DESIGN CONTROL REFERENCE: 9330-091-20112
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: PLASTIC
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.618 INCHES MAXIMUM
OVERALL LENGTH: 0.618 INCHES MAXIMUM
OVERALL WIDTH: 0.232 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
9330-890-00112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003532811
NSN
5961-00-353-2811
9330-890-00112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003532811
NSN
5961-00-353-2811
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 60.00 AMPERES NOMINAL FORWARD CURRENT, MAXIMUM PEAK TOTAL VALUE
DESIGN CONTROL REFERENCE: BYX42-600R
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.437 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
Related Searches:
9331-332-20112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003532813
NSN
5961-00-353-2813
9331-332-20112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003532813
NSN
5961-00-353-2813
MFG
COMMUNICATION SYSTEMS DIV NORTH AMERICAN PHILIPS CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.40 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: BYX22-1200
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 52361
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.400 INCHES MAXIMUM
OVERALL LENGTH: 0.337 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1200.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N1400
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003533278
NSN
5961-00-353-3278
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REVERSE VOLTAGE, AVERAGE
Related Searches:
9001-16-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003533278
NSN
5961-00-353-3278
9001-16-300
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003533278
NSN
5961-00-353-3278
MFG
RADIODETECTION CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REVERSE VOLTAGE, AVERAGE
Related Searches:
F00001-95
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003533278
NSN
5961-00-353-3278
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL AND GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.375 INCHES
OVERALL DIAMETER: 0.875 INCHES MAXIMUM
OVERALL LENGTH: 1.255 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 300.0 NOMINAL REVERSE VOLTAGE, AVERAGE
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JANTXV1N4245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003535328
NSN
5961-00-353-5328
JANTXV1N4245
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003535328
NSN
5961-00-353-5328
MFG
WOODARD ELECTRIC INC.
Description
DESIGN CONTROL REFERENCE: MIS-19320/2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.115 INCHES NOMINAL
OVERALL LENGTH: 0.215 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
MIS-19320/2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003535328
NSN
5961-00-353-5328
MIS-19320/2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003535328
NSN
5961-00-353-5328
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: MIS-19320/2
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 18876
OVERALL DIAMETER: 0.115 INCHES NOMINAL
OVERALL LENGTH: 0.215 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
076011760
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003536641
NSN
5961-00-353-6641
MFG
TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD
Description
DESIGN CONTROL REFERENCE: 076011760
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 3.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 7.200 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
076011750
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003536645
NSN
5961-00-353-6645
MFG
TOKYO KEIKI SEIZOSHO CO. TOKYO PRECISION INSTRUMENT CO. LTD
Description
DESIGN CONTROL REFERENCE: 076011750
MANUFACTURERS CODE: S0555
OVERALL DIAMETER: 3.100 MILLIMETERS MAXIMUM
OVERALL LENGTH: 7.200 MILLIMETERS MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
100090-01
TRANSISTOR
NSN, MFG P/N
5961003536651
NSN
5961-00-353-6651
MFG
NATIONAL MICRONETICS INC PACIFIC DIV
Description
DESIGN CONTROL REFERENCE: 100090-01
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 33821
OVERALL DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
OVERALL HEIGHT: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
313332-5
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961003540676
NSN
5961-00-354-0676
MFG
EDO CORP DIV EDO CORPORATION ANTENNA PRODUCTS & TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
FUNCTION FOR WHICH DESIGNED: MICROWAVE AND MIXER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE MATERIAL: GLASS
INTERNAL CONFIGURATION: POINT CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
SPECIAL FEATURES: MATCHED W/IN .005 VDC.
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
