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5961-01-205-1615
20 Products
087262-2
TRANSISTOR
NSN, MFG P/N
5961012051615
NSN
5961-01-205-1615
MFG
BLUE WAVE ULTRASONICS INC.
Description
TRANSISTOR
Related Searches:
856975-0001
SEMICONDUCTOR DEVIC
NSN, MFG P/N
5961012050668
NSN
5961-01-205-0668
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
SEMICONDUCTOR DEVIC
Related Searches:
77D605616G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012051351
NSN
5961-01-205-1351
77D605616G001
SEMICONDUCTOR DEVICE ASSEMBLY
NSN, MFG P/N
5961012051351
NSN
5961-01-205-1351
MFG
LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS
Description
DESIGN CONTROL REFERENCE: 77D605616G001
MAJOR COMPONENTS: LAMP 30; PRINTED WIRING BOARD 1; RESISTOR 60; TERMINAL 32; TRANSISTOR 30
MANUFACTURERS CODE: 03538
MOUNTING CONFIGURATION: PLUG-IN AND SIX MTG HOLES
OVERALL HEIGHT: 0.940 INCHES NOMINAL
OVERALL LENGTH: 9.000 INCHES NOMINAL
OVERALL WIDTH: 2.600 INCHES NOMINAL
THE MANUFACTURERS DATA:
Related Searches:
919-2120
TRANSISTOR
NSN, MFG P/N
5961012051617
NSN
5961-01-205-1617
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
III END ITEM IDENTIFICATION: AN/URC-94(V)
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
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1N3743
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051618
NSN
5961-01-205-1618
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
A90PB
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051618
NSN
5961-01-205-1618
MFG
INTERNATIONAL RECTIFIER CORPORATION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
J94-0000
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051618
NSN
5961-01-205-1618
MFG
WARD LEONARD ELECTRIC CO INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
J94-0200
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051618
NSN
5961-01-205-1618
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2720-70095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051621
NSN
5961-01-205-1621
2720-70095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051621
NSN
5961-01-205-1621
MFG
DYNAMOTE CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
SKT70F08DT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051621
NSN
5961-01-205-1621
SKT70F08DT
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051621
NSN
5961-01-205-1621
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 800.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
2720-40125
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051622
NSN
5961-01-205-1622
2720-40125
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051622
NSN
5961-01-205-1622
MFG
DYNAMOTE CORP
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
P027RH06DKO
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051622
NSN
5961-01-205-1622
P027RH06DKO
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961012051622
NSN
5961-01-205-1622
MFG
SIEMENS COMPONENTS INC INTEGRATED CIRCUIT DIV
Description
SEMICONDUCTOR MATERIAL: SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
Related Searches:
4801-01-0752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051625
NSN
5961-01-205-1625
4801-01-0752
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051625
NSN
5961-01-205-1625
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
052785
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051626
NSN
5961-01-205-1626
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
021-479
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051627
NSN
5961-01-205-1627
MFG
MILLER ELECTRIC MFG CO
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
JANTX2N3507L
TRANSISTOR
NSN, MFG P/N
5961012051910
NSN
5961-01-205-1910
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX2N3507L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-5
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/349
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/349 GOVERNMENT SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.200 INC
Related Searches:
JANTXV1N6056A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051912
NSN
5961-01-205-1912
JANTXV1N6056A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051912
NSN
5961-01-205-1912
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MICROAMPERES MAXIMUM DRAIN CURRENT
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6056A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-PRF-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MI
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5E4818/05-0019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051913
NSN
5961-01-205-1913
5E4818/05-0019
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051913
NSN
5961-01-205-1913
MFG
HAMILTON SUNDSTRAND CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6054A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TES
Related Searches:
JANTXV1N6054A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051913
NSN
5961-01-205-1913
JANTXV1N6054A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051913
NSN
5961-01-205-1913
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM REVERSE BREAKDOWN CURRENT, INSTANTANEOUS
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTXV1N6054A
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TXV
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.357 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TES
Related Searches:
FS101-1000-055N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051914
NSN
5961-01-205-1914
FS101-1000-055N
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961012051914
NSN
5961-01-205-1914
MFG
BAE SYSTEMS INTEGRATED SYSTEM TECHNO LOGIES LTD
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM PEAK PULSE CURRENT AND 5.00 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N6071A
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-13
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/507
OVERALL DIAMETER: 0.235 INCHES MAXIMUM
OVERALL LENGTH: 0.570 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM AVERAGE ON-STATE POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/507 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-MIL-S-19500 SPECIFICATION
V
