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5961-01-321-9341
20 Products
28458-0220-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013219341
NSN
5961-01-321-9341
28458-0220-0001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013219341
NSN
5961-01-321-9341
MFG
THALES UK LIMITED, AEROSPACE DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
350-3021-7
TRANSISTOR
NSN, MFG P/N
5961013215176
NSN
5961-01-321-5176
MFG
IMED CORP
Description
DESIGN CONTROL REFERENCE: 350-3021-7
III END ITEM IDENTIFICATION: 6515-01-252-4174
III PURCHASE DESCRIPTION IDENTIFICATION: 58682-350-3021-7
MANUFACTURERS CODE: 58682
SPECIAL FEATURES: REPAIR PART FOR CONTROLLER,FLOW RATE,INTRAVENOUS,MODEL 350
THE MANUFACTURERS DATA:
Related Searches:
CG853756P115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215177
NSN
5961-01-321-5177
CG853756P115
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215177
NSN
5961-01-321-5177
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: CG853756P115
MANUFACTURERS CODE: 24456
SPECIAL FEATURES: END ITEM APPLICATION C-ARRM X-RAY APPARATUS; CAGE 24456; P/N S2030D
THE MANUFACTURERS DATA:
Related Searches:
CG853757P045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215178
NSN
5961-01-321-5178
CG853757P045
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215178
NSN
5961-01-321-5178
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: CG853757P045
MANUFACTURERS CODE: 24456
SPECIAL FEATURES: BRIDGE; 300 V; 25 A; END ITEM APPLICATION C-ARM X-RAY APPARATUS; CAGE 24456; P/N S2030D
THE MANUFACTURERS DATA:
Related Searches:
CGK560004139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215179
NSN
5961-01-321-5179
CGK560004139
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215179
NSN
5961-01-321-5179
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: CGK560004139
MANUFACTURERS CODE: 24456
SPECIAL FEATURES: END ITEM APPLICATION C-ARM X-RAY APPARATUS; CAGE 24456, P/N S2030D
THE MANUFACTURERS DATA:
Related Searches:
CGGM853801P095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013215181
NSN
5961-01-321-5181
CGGM853801P095
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013215181
NSN
5961-01-321-5181
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: CGGM853801P095
MANUFACTURERS CODE: 24456
SPECIAL FEATURES: END ITEM APPLICATIOAN C-ARM X-RAY APPARATUS; CAGE 24456; P/N S2030D
THE MANUFACTURERS DATA:
Related Searches:
CGGM853802P125
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013215182
NSN
5961-01-321-5182
CGGM853802P125
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013215182
NSN
5961-01-321-5182
MFG
GENERAL ELECTRIC CO MEDICAL SYSTEMS DIV
Description
DESIGN CONTROL REFERENCE: CGGM853802P125
MANUFACTURERS CODE: 24456
SPECIAL FEATURES: END ITEM APPLICATION C-ARM X-RAY APPARATUS; CAGE 24456; P/N S2030D
THE MANUFACTURERS DATA:
Related Searches:
MVAM109
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013215612
NSN
5961-01-321-5612
MFG
FREESCALE SEMICONDUCTOR INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
11468615
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013216559
NSN
5961-01-321-6559
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 11468615
III END ITEM IDENTIFICATION: 1430-01-087-6330
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-11468615 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
2N6678
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961013216559
NSN
5961-01-321-6559
MFG
INTERSIL CORPORATION
Description
DESIGN CONTROL REFERENCE: 11468615
III END ITEM IDENTIFICATION: 1430-01-087-6330
MANUFACTURERS CODE: 18876
TEST DATA DOCUMENT: 18876-11468615 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
JANTX1N6134
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013217373
NSN
5961-01-321-7373
JANTX1N6134
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013217373
NSN
5961-01-321-7373
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 8.00 MILLIAMPERES NOMINAL REVERSE BREAKDOWN CURRENT, DC
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JANTX1N6134
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND QUALITY ASSURANCE LEVEL TX
FUNCTION FOR WHICH DESIGNED: TRANSIENT SUPPRESSOR
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/516
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM REVERSE POWER DISSIPATION, DC
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION
TERMINAL LENGTH: 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 81349-M
Related Searches:
507749-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013218287
NSN
5961-01-321-8287
MFG
RAYTHEON COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.375 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
RA2650
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013218287
NSN
5961-01-321-8287
MFG
VOLTAGE MULTIPLIERS INC. DBA V M I
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.375 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SA10962
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013218287
NSN
5961-01-321-8287
MFG
SEMTECH CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.375 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
SEN-B-832-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013218287
NSN
5961-01-321-8287
SEN-B-832-11
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961013218287
NSN
5961-01-321-8287
MFG
RSM ELECTRON POWER INC . DBA RSM SENSITRON SEMICONDUCTOR
Description
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE AND 25.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT
FEATURES PROVIDED: BURN IN
INCLOSURE MATERIAL: CERAMIC OR GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.250 INCHES NOMINAL
OVERALL LENGTH: 2.375 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 3.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 12500.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
IRFJ120
TRANSISTOR
NSN, MFG P/N
5961013218985
NSN
5961-01-321-8985
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.260 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
TR7-00018-001
TRANSISTOR
NSN, MFG P/N
5961013218985
NSN
5961-01-321-8985
MFG
MICROSOURCE INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 8.00 AMPERES MAXIMUM DRAIN CURRENT AND 32.00 AMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.340 INCHES MAXIMUM
OVERALL LENGTH: 1.260 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 40.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 100.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE
Related Searches:
16RIA10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013218986
NSN
5961-01-321-8986
16RIA10
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013218986
NSN
5961-01-321-8986
MFG
INTERNATIONAL RECTIFIER CORP ORATION USE CAGE CODE 81483 FOR CATALOGING.
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 20.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.650 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 86.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL V
Related Searches:
5542920
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013218986
NSN
5961-01-321-8986
5542920
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961013218986
NSN
5961-01-321-8986
MFG
NAVAL SEA SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 35.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL AND 20.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, PEAK AND 20.00 MILLIAMPERES MAXIMUM OFF-STATE CURRENT, PEAK
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL LENGTH: 1.645 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.650 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 86.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 150.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 100.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL V
Related Searches:
BF224
TRANSISTOR
NSN, MFG P/N
5961013219340
NSN
5961-01-321-9340
MFG
ADVANCED SEMICONDUCTOR INC. DBA A S I
Description
TRANSISTOR
