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5961-00-119-4473
20 Products
0AZ240
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194473
NSN
5961-00-119-4473
MFG
VISHAY
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1S6007RA
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194471
NSN
5961-00-119-4471
MFG
RAYTHEON SYSTEMS LTD WEAPONS SUPPORT GROUP
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
9002340
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194471
NSN
5961-00-119-4471
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1906291
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194473
NSN
5961-00-119-4473
MFG
THALES SECURITY SYSTEMS UK LIMITED
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
48-82466H13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
48-82466H13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
DESIGN CONTROL REFERENCE: 48C82466H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
48C82466H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
48C82466H03
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
MFG
STATE HEALTH SERVICES TEXAS DEPARTMENT OF USE CAGE CODE 01WR9 FOR CATALOGING.
Description
DESIGN CONTROL REFERENCE: 48C82466H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
48C82466H13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
48C82466H13
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
MFG
VENTELO
Description
DESIGN CONTROL REFERENCE: 48C82466H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
48D82466H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
48D82466H04
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
DESIGN CONTROL REFERENCE: 48C82466H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
SR1161
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001194499
NSN
5961-00-119-4499
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 48C82466H03
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 01537
MOUNTING METHOD: TERMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
532758-2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001196649
NSN
5961-00-119-6649
MFG
RAYTHEON COMPANY
Description
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 532758-2
NONDEFINITIVE SPEC/STD DATA: 532758-2 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
T1V307
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001196649
NSN
5961-00-119-6649
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MANUFACTURERS CODE: 96214
MFR SOURCE CONTROLLING REFERENCE: 532758-2
NONDEFINITIVE SPEC/STD DATA: 532758-2 TYPE
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
Related Searches:
JAN1N3319B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001198820
NSN
5961-00-119-8820
JAN1N3319B
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001198820
NSN
5961-00-119-8820
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
CURRENT RATING PER CHARACTERISTIC: 630.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT AND 2.38 AMPERES MAXIMUM MAXIMUM DC CURRENT IN REVERSE BREAKDOWN REGION
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: JAN1N3319B
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: ANODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 81349
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-PRF-19500/358
OVERALL DIAMETER: 0.667 INCHES MAXIMUM
OVERALL LENGTH: 1.453 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-S-19500/358 GOVERNMENT SPECIFICATION
TERMI
Related Searches:
60101-004
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001199119
NSN
5961-00-119-9119
MFG
TYCO ELECTRONICS CORPORATION DBA CII TECHNOLOGIES HARTMAN PRODUCTS
Description
CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.055 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
UT112
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001199119
NSN
5961-00-119-9119
MFG
MICRO USPD INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.75 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES NOMINAL
OVERALL LENGTH: 0.085 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 1.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.055 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1563075
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001201047
NSN
5961-00-120-1047
1563075
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961001201047
NSN
5961-00-120-1047
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.335 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 7 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 10001-1563075 DRAWING
TRANSFER RATIO: 40.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLL
Related Searches:
CPP3110
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001201159
NSN
5961-00-120-1159
MFG
EDO
Description
MOUNTING METHOD: TERMINAL
Related Searches:
2137033G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001202641
NSN
5961-00-120-2641
2137033G001
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961001202641
NSN
5961-00-120-2641
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: 2137033G001
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 28527
OVERALL DIAMETER: 0.092 INCHES MINIMUM AND 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2137041G1
TRANSISTOR
NSN, MFG P/N
5961001202653
NSN
5961-00-120-2653
MFG
ITT CORPORATION
Description
DESIGN CONTROL REFERENCE: 2137041G1
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 28527
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL HEIGHT: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2137204G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001202660
NSN
5961-00-120-2660
2137204G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001202660
NSN
5961-00-120-2660
MFG
ITT CORPORATION
Description
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 1.500 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPECIAL FEATURES: ENCAPSULATED IN EPOXY; TURRET TYPE LEADS
Related Searches:
2137202G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001202663
NSN
5961-00-120-2663
2137202G001
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961001202663
NSN
5961-00-120-2663
MFG
ITT CORPORATION
Description
MANUFACTURERS CODE: 28527
MFR SOURCE CONTROLLING REFERENCE: 2137202G001
OVERALL HEIGHT: 0.500 INCHES MAXIMUM
OVERALL LENGTH: 2.000 INCHES MAXIMUM
OVERALL WIDTH: 0.750 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: ENCAPSULATED IN EPOXY; TURRET TYPE LEADS
