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5961-00-547-2468
20 Products
14011-0011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472468
NSN
5961-00-547-2468
14011-0011
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472468
NSN
5961-00-547-2468
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N5916A
TRANSISTOR
NSN, MFG P/N
5961005464147
NSN
5961-00-546-4147
MFG
ADELCO ELEKTRONIK GMBH
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.700 INCHES NOMINAL
OVERALL LENGTH: 1.320 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6090 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 24.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
AL4534504
TRANSISTOR
NSN, MFG P/N
5961005464147
NSN
5961-00-546-4147
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
CURRENT RATING PER CHARACTERISTIC: 0.20 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: CERAMIC AND METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
OVERALL HEIGHT: 0.700 INCHES NOMINAL
OVERALL LENGTH: 1.320 INCHES NOMINAL
OVERALL WIDTH: 0.880 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIFICATION/STANDARD DATA: 80131-RELEASE 6090 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL TYPE AND QUANTITY: 4 RIBBON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 55.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 24.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.5 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
Related Searches:
403015
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005465550
NSN
5961-00-546-5550
MFG
TARGET CORPORATION DBA TARGET
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
1N1196AR
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005466232
NSN
5961-00-546-6232
MFG
SEMICON COMPONENTS INC
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 1N1196AR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 11961
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
JHP124-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005466232
NSN
5961-00-546-6232
JHP124-020
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005466232
NSN
5961-00-546-6232
MFG
HOLLINGSWORTH JOHN R CO
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
DESIGN CONTROL REFERENCE: 1N1196AR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 11961
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS CASE
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.250 INCHES
OVERALL HEIGHT: 0.450 INCHES MAXIMUM
OVERALL LENGTH: 0.450 INCHES MAXIMUM
OVERALL WIDTH: 0.687 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 2 THREADED STUD
THE MANUFACTURERS DATA:
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 400.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
40392L
TRANSISTOR
NSN, MFG P/N
5961005466261
NSN
5961-00-546-6261
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 40392L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE 1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
QI01
TRANSISTOR
NSN, MFG P/N
5961005466261
NSN
5961-00-546-6261
MFG
NAUTEL LIMITED
Description
CURRENT RATING PER CHARACTERISTIC: 700.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
DESIGN CONTROL REFERENCE: 40392L
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE 1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 34371
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.260 INCHES MAXIMUM
OVERALL LENGTH: 0.260 INCHES MAXIMUM
OVERALL WIDTH: 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 7.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN
Related Searches:
610035
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472468
NSN
5961-00-547-2468
MFG
LOGIMETRICS INC
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
VE48X
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472468
NSN
5961-00-547-2468
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G365480-3
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472594
NSN
5961-00-547-2594
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
G365480-4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961005472596
NSN
5961-00-547-2596
MFG
LUCENT TECHNOLOGIES INC DBA FEDERAL MARKETING GROUP
Description
CAPACITANCE RATING IN PICOFARADS: 71.0 MINIMUM AND 75.0 MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 5.00 NANOAMPERES MAXIMUM SOURCE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
FUNCTION FOR WHICH DESIGNED: VOLTAGE VARIABLE CAPACITOR
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS
Related Searches:
338513
TRANSISTOR
NSN, MFG P/N
5961005472636
NSN
5961-00-547-2636
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC
Related Searches:
ITS31228
TRANSISTOR
NSN, MFG P/N
5961005472636
NSN
5961-00-547-2636
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC
Related Searches:
SM0019
TRANSISTOR
NSN, MFG P/N
5961005472636
NSN
5961-00-547-2636
MFG
GENERAL INSTRUMENT CORP RECTIFIER DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 1.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC
Related Searches:
338513-2
TRANSISTOR
NSN, MFG P/N
5961005472638
NSN
5961-00-547-2638
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
ITS31227
TRANSISTOR
NSN, MFG P/N
5961005472638
NSN
5961-00-547-2638
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
SM0020
TRANSISTOR
NSN, MFG P/N
5961005472638
NSN
5961-00-547-2638
MFG
GENERAL INSTRUMENT CORP RECTIFIER DIV
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL INSULATED GATE TYPE
CURRENT RATING PER CHARACTERISTIC: 0.50 NANOAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: BASE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.190 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 225.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 56232-338513 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -35.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -35.0 MAXIMUM GATE NON-TRIGGER VOLTAGE, DC AND 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
Related Searches:
472-0835-001
TRANSISTOR
NSN, MFG P/N
5961005472662
NSN
5961-00-547-2662
MFG
BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS
Description
DESIGN CONTROL REFERENCE: 472-0835-001
MANUFACTURERS CODE: 94756
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: AS DIFFERENTIATED BY SPECIAL TEST FEATURES
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL TEST FEATURES: NAVORD OD41152
Related Searches:
10031455-101
TRANSISTOR
NSN, MFG P/N
5961005473332
NSN
5961-00-547-3332
MFG
HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
CURRENT RATING PER CHARACTERISTIC: -30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND -7.50 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.300 INCHES MAXIMUM
OVERALL LENGTH: 1.550 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 40.0 MINIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERIS
