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5961-00-615-9922
20 Products
348C18121-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159922
NSN
5961-00-615-9922
348C18121-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159922
NSN
5961-00-615-9922
MFG
MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP
Description
DESIGN CONTROL REFERENCE: 348C18121-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94990
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
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SJE974
TRANSISTOR
NSN, MFG P/N
5961006157829
NSN
5961-00-615-7829
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.560 INCHES MINIMUM
OVERALL WIDTH: 0.380 INCHES MINIMUM
POWER RATING PER CHARACTERISTIC: 83.5 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TRANSFER RATIO: 100.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 200.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN
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528038
TRANSISTOR
NSN, MFG P/N
5961006158207
NSN
5961-00-615-8207
MFG
BOONTON ELECTRONICS CORPORATION DBA ALLTEL
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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DMS 81037B
TRANSISTOR
NSN, MFG P/N
5961006158207
NSN
5961-00-615-8207
MFG
DEFENSE ELECTRONICS SUPPLY CENTER
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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TIS58Y
TRANSISTOR
NSN, MFG P/N
5961006158207
NSN
5961-00-615-8207
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 4.00 MILLIAMPERES MAXIMUM REVERSE GATE CURRENT WITH ALL OTHER TERMINALS SHORT-CIRCUIT TO SOURCE, JUNCTION-GATE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: FIELD EFFECT
OVERALL HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL WIDTH: 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE
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94627
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006158315
NSN
5961-00-615-8315
MFG
CENTURION NON DESTRUCTIVE TESTING INC DBA CENTURION N D T
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
2N119
TRANSISTOR
NSN, MFG P/N
5961006159407
NSN
5961-00-615-9407
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N119 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
94-035
TRANSISTOR
NSN, MFG P/N
5961006159407
NSN
5961-00-615-9407
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN MS2
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-2N119 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
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1654553PC4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
1654553PC4
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
1N474
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
348B18466-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
348B18466-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
MFG
GENERAL DYNAMICS C4 SYSTEMS INC.
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
581-290
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159440
NSN
5961-00-615-9440
MFG
AMPEX DATA SYSTEMS CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 5.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIFICATION/STANDARD DATA: 80131-RELEASE1554 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.8 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
2N291
TRANSISTOR
NSN, MFG P/N
5961006159625
NSN
5961-00-615-9625
MFG
RAYTHEON COMPANY
Description
DESIGN CONTROL REFERENCE: 2N291
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
9173505
TRANSISTOR
NSN, MFG P/N
5961006159625
NSN
5961-00-615-9625
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
DESIGN CONTROL REFERENCE: 2N291
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: PNP
MANUFACTURERS CODE: 96214
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
2N139
TRANSISTOR
NSN, MFG P/N
5961006159649
NSN
5961-00-615-9649
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
OVERALL DIAMETER: 0.230 INCHES NOMINAL
OVERALL HEIGHT: 0.210 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: GERMANIUM
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL TYPE AND QUANTITY: 3 PIN
Related Searches:
2N167
TRANSISTOR
NSN, MFG P/N
5961006159768
NSN
5961-00-615-9768
MFG
ELECTRONIC INDUSTRIES ASSOCIATION
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION: NPN
SEMICONDUCTOR MATERIAL: GERMANIUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
Related Searches:
SG223
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006159922
NSN
5961-00-615-9922
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
DESIGN CONTROL REFERENCE: 348C18121-1
FEATURES PROVIDED: HERMETICALLY SEALED CASE
MANUFACTURERS CODE: 94990
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
1N4012
DIODE
NSN, MFG P/N
5961006172352
NSN
5961-00-617-2352
MFG
MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI
Description
DIODE
Related Searches:
VF25-20
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006172513
NSN
5961-00-617-2513
MFG
L-3 COMMUNICATIONS CORPORATION DBA L 3 COMMUNICATIONS CORPORATION EOS DIVISION
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
SV121
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961006173101
NSN
5961-00-617-3101
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 4.48 MAXIMUM NOMINAL REGULATOR VOLTAGE
