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5961-01-167-5089
20 Products
43A337-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
NSN
5961-01-167-5089
43A337-12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
NSN
5961-01-167-5089
MFG
POWER PARAGON INC DBA POWER SYSTEMS GROUP DIV POWER SYSTEMS GROUP
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011675063
NSN
5961-01-167-5063
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,DIODE
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SKN2M400/12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011675063
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5961-01-167-5063
SKN2M400/12
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011675063
NSN
5961-01-167-5063
MFG
SEMIKRON INTL INC
Description
SEMICONDUCTOR DEVICE,DIODE
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C390PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
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5961-01-167-5089
C390PB
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
NSN
5961-01-167-5089
MFG
POWEREX INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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SKT-600/12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
NSN
5961-01-167-5089
SKT-600/12
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961011675089
NSN
5961-01-167-5089
MFG
SEMIKRON INTL INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
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0447950002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011675096
NSN
5961-01-167-5096
0447950002
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011675096
NSN
5961-01-167-5096
MFG
SUNAIR ELECTRONICS LLC
Description
CAPACITANCE RATING IN PICOFARADS: 2.8 NOMINAL ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.770 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANS
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SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011675096
NSN
5961-01-167-5096
LM3086N
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961011675096
NSN
5961-01-167-5096
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
CAPACITANCE RATING IN PICOFARADS: 2.8 NOMINAL ALL TRANSISTOR
COMPONENT NAME AND QUANTITY: 5 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
INCLOSURE MATERIAL: PLASTIC
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 85.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.130 INCHES NOMINAL
OVERALL LENGTH: 0.770 INCHES NOMINAL
OVERALL WIDTH: 0.250 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 750.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIAL FEATURES: ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANS
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TRANSISTOR
NSN, MFG P/N
5961011675574
NSN
5961-01-167-5574
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 21952
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 75.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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21953
TRANSISTOR
NSN, MFG P/N
5961011675575
NSN
5961-01-167-5575
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 600.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 21953
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -60.0 NOMINAL COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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21956
TRANSISTOR
NSN, MFG P/N
5961011675576
NSN
5961-01-167-5576
MFG
SMITHS AEROSPACE INC. ELECTRONIC SYSTEMS-GRAND RAPIDS
Description
CURRENT RATING PER CHARACTERISTIC: 800.00 MILLIAMPERES NOMINAL COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.085 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS NOMINAL TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
SPECIAL TEST FEATURES: TESTED PER BASE TEN SYSTEMS DWG 21956
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 NOMINAL COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN
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48-01-042
TRANSISTOR
NSN, MFG P/N
5961011675780
NSN
5961-01-167-5780
MFG
REPCO INC
Description
INCLOSURE MATERIAL: CERAMIC
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 1.500 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 4 RIBBON
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TRANSISTOR
NSN, MFG P/N
5961011675901
NSN
5961-01-167-5901
MFG
COMPUTER TRANSCEIVER SYSTEMS INC
Description
TRANSISTOR
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011675902
NSN
5961-01-167-5902
MFG
TARGET CORPORATION DBA TARGET
Description
SEMICONDUCTOR DEVICE,DIODE
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5961011675902
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011675902
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5961-01-167-5902
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
SEMICONDUCTOR DEVICE,DIODE
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TRANSISTOR
NSN, MFG P/N
5961011675983
NSN
5961-01-167-5983
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
POWER RATING PER CHARACTERISTIC: 30.0 WATTS NOMINAL TOTAL POWER DISSIPATION
THREAD SERIES DESIGNATOR: UNC
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MINIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN
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1900-0023
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676029
NSN
5961-01-167-6029
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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1901-0920
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676029
NSN
5961-01-167-6029
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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1900-0024
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676030
NSN
5961-01-167-6030
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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5082-5550
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676030
NSN
5961-01-167-6030
MFG
HEWLETT PACKARD CO
Description
CRITICALITY CODE JUSTIFICATION: FEAT
III END ITEM IDENTIFICATION: STRATEGIC WEAPON SYSTEMS (POSEIDON AND TRIDENT)
SPECIAL FEATURES: WEAPON SYSTEM ESSENTIAL
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SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961011676031
NSN
5961-01-167-6031
MFG
HEWLETT PACKARD CO
Description
SEMICONDUCTOR DEVICE,DIODE
