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5961-00-256-8783

20 Products

007-06045-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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007-06045-0000

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-OLATHE

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

SZ12726

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565110

NSN

5961-00-256-5110

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SZ12726

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565110

NSN

5961-00-256-5110

MFG

FREESCALE SEMICONDUCTOR INC.

Description

CURRENT RATING PER CHARACTERISTIC: 1.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.104 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.7 MAXIMUM NOMINAL REGULATOR VOLTAGE

0N149646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565111

NSN

5961-00-256-5111

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0N149646

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565111

NSN

5961-00-256-5111

MFG

NATIONAL SECURITY AGENCY

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

4EX5858

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565111

NSN

5961-00-256-5111

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4EX5858

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002565111

NSN

5961-00-256-5111

MFG

MATERIALS NORTHWEST INC

Description

CURRENT RATING PER CHARACTERISTIC: 70.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.700 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 110.0 MAXIMUM ON VOLTAGE, FORWARD VOLTAGE DROP, DC

1813564-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

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1813564-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

MFG

HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER GUIDANCE SYSTEMS DIV

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55973
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 1813564-11
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

1823564-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

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1823564-11

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

MFG

L-3 COMMUNICATIONS HOLDINGS INC. DBA SPACE AND NAVIGATION DIV SPACE & NAVIGATION

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55973
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 1813564-11
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

HW15A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

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HW15A

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

MFG

N A P SMD TECHNOLOGY INC

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55973
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 1813564-11
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

UZ815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

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UZ815

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002566329

NSN

5961-00-256-6329

MFG

MICRO USPD INC

Description

INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 55973
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 175.0 DEG CELSIUS AMBIENT AIR
MFR SOURCE CONTROLLING REFERENCE: 1813564-11
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MAXIMUM
OVERALL LENGTH: 0.160 INCHES MAXIMUM
SPEC/STD CONTROLLING DATA:
TERMINAL CIRCLE DIAMETER: 0.032 INCHES MAXIMUM
TERMINAL LENGTH: 0.750 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD

5MSD1W12

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002566825

NSN

5961-00-256-6825

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5MSD1W12

RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED

NSN, MFG P/N

5961002566825

NSN

5961-00-256-6825

MFG

SOLITRON DEVICES INC.

113308

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

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113308

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

MFG

FLUKE CORPORATION

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

CD13161

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

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CD13161

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

MFG

TELCOM SEMICONDUCTOR INC

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

FDH9275

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

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FDH9275

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

SG22

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

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SG22

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568127

NSN

5961-00-256-8127

MFG

GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP

Description

CURRENT RATING PER CHARACTERISTIC: 500.00 MILLIAMPERES MAXIMUM REPETITIVE PEAK FORWARD CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE

G390301S2

TRANSISTOR

NSN, MFG P/N

5961002568767

NSN

5961-00-256-8767

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G390301S2

TRANSISTOR

NSN, MFG P/N

5961002568767

NSN

5961-00-256-8767

MFG

ITT CORPORATION DBA ITT GILFILLAN

Description

FEATURES PROVIDED: HERMETICALLY SEALED CASE
INTERNAL CONFIGURATION: JUNCTION CONTACT
SEMICONDUCTOR MATERIAL: SILICON

154-0004-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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154-0004-001

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

EATON CORP ELECTRONIC INSTRUMENTATION DIV LOS ANGELES PLANT

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

1N5390

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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1N5390

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

2710004-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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2710004-00

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

EIP MICROWAVE INC

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

353-3708-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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353-3708-010

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

46617-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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46617-1

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

HAMILTON STANDARD ELECTRONICS SYSTEMS INC TELE-DYNAMICS DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK

54553-74

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

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54553-74

SEMICONDUCTOR DEVICE,DIODE

NSN, MFG P/N

5961002568783

NSN

5961-00-256-8783

MFG

DIGITAL DEVELOPMENT CORP HAWTHORNE DIV

Description

CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.105 INCHES MAXIMUM
OVERALL LENGTH: 0.275 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 10.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 5.5 MAXIMUM REVERSE VOLTAGE, PEAK