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5961-00-431-4950
20 Products
1900-0014
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004314950
NSN
5961-00-431-4950
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
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MA4194M
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004314950
NSN
5961-00-431-4950
MFG
M/A-COM INC. DBA TYCO ELECTRONIC WIRELESS SYSTEM
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: GLASS ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-7 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
720461
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004314986
NSN
5961-00-431-4986
MFG
SYSTRON-DONNER CORP MICROWAVE/INSTRUMENT DIV
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
OVERALL DIAMETER: 0.096 INCHES NOMINAL
OVERALL LENGTH: 0.265 INCHES NOMINAL
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
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858097
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004315314
NSN
5961-00-431-5314
858097
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004315314
NSN
5961-00-431-5314
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
OVERALL HEIGHT: 0.440 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES MAXIMUM
OVERALL WIDTH: 1.375 INCHES MAXIMUM
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MB12A25V20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004315314
NSN
5961-00-431-5314
MB12A25V20
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961004315314
NSN
5961-00-431-5314
MFG
WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV
Description
OVERALL HEIGHT: 0.440 INCHES NOMINAL
OVERALL LENGTH: 2.000 INCHES MAXIMUM
OVERALL WIDTH: 1.375 INCHES MAXIMUM
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0N171017
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004315809
NSN
5961-00-431-5809
0N171017
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004315809
NSN
5961-00-431-5809
MFG
NATIONAL SECURITY AGENCY
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: KG-30 KEY GNTR/CJA
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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652-684
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004315809
NSN
5961-00-431-5809
652-684
RECTIFIER,SEMICONDUCTOR DEVICE
NSN, MFG P/N
5961004315809
NSN
5961-00-431-5809
MFG
MICRO USPD INC
Description
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC: 1.20 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 1.2 FORWARD VOLTAGE, TOTAL RMS
CIRCUIT CONNECTION STYLE DESIGNATOR: 7 BRIDGE 1 PHASE
III END ITEM IDENTIFICATION: KG-30 KEY GNTR/CJA
MATERIAL: SILICON
MOUNTING METHOD: TERMINAL
OPERATING TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
OVERALL HEIGHT: 0.750 INCHES NOMINAL
OVERALL LENGTH: 0.500 INCHES NOMINAL
OVERALL WIDTH: 0.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
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100230-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004316499
NSN
5961-00-431-6499
100230-101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961004316499
NSN
5961-00-431-6499
MFG
KAMAN AEROSPACE CORPORATION DBA KAMAN PRECISION PRODUCTS DIVISION DIV KAMAN AEROSPACE CORPORATION FUZING DIVISION
Description
SEMICONDUCTOR DEVICES,UNITIZED
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1855-0084
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004316812
NSN
5961-00-431-6812
MFG
AVAGO TECHNOLOGIES U.S. INC. DIV AVAGO TECHNOLOGIES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: FIELD EFFECT ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18 ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
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S-1805
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961004316812
NSN
5961-00-431-6812
MFG
SOLITRON DEVICES INC.
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: P-CHANNEL JUNCTION TYPE
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: FIELD EFFECT ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-18 ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL ALL TRANSISTOR
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD ALL TRANSISTOR
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1854-0224
TRANSISTOR
NSN, MFG P/N
5961004316829
NSN
5961-00-431-6829
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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357139
TRANSISTOR
NSN, MFG P/N
5961004316829
NSN
5961-00-431-6829
MFG
SIERRA TECHNOLOGIES INC GARDEN CITY DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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40250
TRANSISTOR
NSN, MFG P/N
5961004316829
NSN
5961-00-431-6829
MFG
RCA CORP NEW PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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655781
TRANSISTOR
NSN, MFG P/N
5961004316829
NSN
5961-00-431-6829
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
CURRENT RATING PER CHARACTERISTIC: 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-66
MOUNTING METHOD: TERMINAL
OVERALL HEIGHT: 0.295 INCHES MINIMUM
OVERALL LENGTH: 1.252 INCHES MAXIMUM
OVERALL WIDTH: 0.700 INCHES NOMINAL
POWER RATING PER CHARACTERISTIC: 29.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL LENGTH: 0.360 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 25.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 100.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.5 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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1854-0245
TRANSISTOR
NSN, MFG P/N
5961004316830
NSN
5961-00-431-6830
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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37938
TRANSISTOR
NSN, MFG P/N
5961004316830
NSN
5961-00-431-6830
MFG
INTERSIL CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 30.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-3
MOUNTING FACILITY QUANTITY: 2
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.350 INCHES NOMINAL
OVERALL LENGTH: 1.573 INCHES MAXIMUM
OVERALL WIDTH: 1.050 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 150.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 PIN AND 1 CASE
TRANSFER RATIO: 20.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND 120.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 40.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 1.0 MAXIMUM COLLECTOR TO EMITTER SATURATION VOLTAGE
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MR1126
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961004317841
NSN
5961-00-431-7841
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 300.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS AND METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-4
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 190.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.190 INCHES
OVERALL DIAMETER: 0.424 INCHES MAXIMUM
OVERALL LENGTH: 0.405 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.424 INCHES MINIMUM AND 0.437 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL TYPE AND QUANTITY: 1 TAB, SOLDER LUG AND 1 THREADED STUD
THREAD SERIES DESIGNATOR: UNF
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 600.0 MAXIMUM REVERSE VOLTAGE, PEAK
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440001
TRANSISTOR
NSN, MFG P/N
5961004317857
NSN
5961-00-431-7857
MFG
SYQWEST INC.
Description
TRANSISTOR
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4902-00-0290
TRANSISTOR
NSN, MFG P/N
5961004317857
NSN
5961-00-431-7857
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
TRANSISTOR
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854529
TRANSISTOR
NSN, MFG P/N
5961004317857
NSN
5961-00-431-7857
MFG
RAYTHEON TECHNICAL SERVICES COMPANY
Description
TRANSISTOR
