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5961-00-350-8230
20 Products
03-49027-42
TRANSISTOR
NSN, MFG P/N
5961003508230
NSN
5961-00-350-8230
MFG
COMPUTER AUTOMATION INC
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLE
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AEB0690-5A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003502224
NSN
5961-00-350-2224
AEB0690-5A
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003502224
NSN
5961-00-350-2224
MFG
U S DEPT OF TRANSPORTATION FEDERAL AVIATION ADMINISTRATION
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
J94-0169
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003502224
NSN
5961-00-350-2224
J94-0169
SEMICONDUCTOR DEVICE,THYRISTOR
NSN, MFG P/N
5961003502224
NSN
5961-00-350-2224
MFG
WARD LEONARD ELECTRIC CO INC
Description
SEMICONDUCTOR DEVICE,THYRISTOR
Related Searches:
151-0216-00
TRANSISTOR
NSN, MFG P/N
5961003502246
NSN
5961-00-350-2246
MFG
SPACELABS-HILLSBORO OPERATIONS SQUIBB VITATEK INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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SPS8803
TRANSISTOR
NSN, MFG P/N
5961003502246
NSN
5961-00-350-2246
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 0.50 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
INCLOSURE MATERIAL: PLASTIC
INTERNAL CONFIGURATION: JUNCTION CONTACT
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.210 INCHES MAXIMUM
OVERALL LENGTH: 0.205 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: PNP
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: -25.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 20.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND -4.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN
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74200002-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503224
NSN
5961-00-350-3224
74200002-02
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503224
NSN
5961-00-350-3224
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
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74201145-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503228
NSN
5961-00-350-3228
74201145-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503228
NSN
5961-00-350-3228
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
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74202077-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503233
NSN
5961-00-350-3233
74202077-00
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503233
NSN
5961-00-350-3233
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
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4913485-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503240
NSN
5961-00-350-3240
4913485-30
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503240
NSN
5961-00-350-3240
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
IN7541
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503262
NSN
5961-00-350-3262
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
16R2B2
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961003503263
NSN
5961-00-350-3263
MFG
EDAL INDUSTRIES INC.
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
B541
TRANSISTOR
NSN, MFG P/N
5961003503268
NSN
5961-00-350-3268
MFG
INTERSIL CORPORATION
Description
TRANSISTOR
Related Searches:
GA324
TRANSISTOR
NSN, MFG P/N
5961003503268
NSN
5961-00-350-3268
MFG
RAYTHEON COMPANY
Description
TRANSISTOR
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3004187-00
TRANSISTOR
NSN, MFG P/N
5961003503642
NSN
5961-00-350-3642
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV MS2
Description
TRANSISTOR
Related Searches:
216-37673
TRANSISTOR
NSN, MFG P/N
5961003507767
NSN
5961-00-350-7767
MFG
VOUGHT AIRCRAFT INDUSTRIES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80378
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 216-37673
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.440 INCHES MINIMUM AND 1.525 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.865 INCHES MINIMUM AND 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UN
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SDT8746
TRANSISTOR
NSN, MFG P/N
5961003507767
NSN
5961-00-350-7767
MFG
SOLITRON DEVICES INC.
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND 5.00 AMPERES MAXIMUM BASE CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE AND MOUNTING HARDWARE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MANUFACTURERS CODE: 80378
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MFR SOURCE CONTROLLING REFERENCE: 216-37673
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: THREADED STUD
NOMINAL THREAD SIZE: 0.312 INCHES
OVERALL LENGTH: 1.440 INCHES MINIMUM AND 1.525 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS: 0.865 INCHES MINIMUM AND 0.875 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 100.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 2 TAB, SOLDER LUG AND 1 WIRE HOOK
THREAD SERIES DESIGNATOR: UN
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151-0478-00
TRANSISTOR
NSN, MFG P/N
5961003508230
NSN
5961-00-350-8230
MFG
TEKTRONIX INC. DBA TEKTRONIX
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLE
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20-007F00M00R00
TRANSISTOR
NSN, MFG P/N
5961003508230
NSN
5961-00-350-8230
MFG
CONCURRENT COMPUTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLE
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2111103
TRANSISTOR
NSN, MFG P/N
5961003508230
NSN
5961-00-350-8230
MFG
CEI CORP
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLE
Related Searches:
400101-01
TRANSISTOR
NSN, MFG P/N
5961003508230
NSN
5961-00-350-8230
MFG
TALLY PRINTER CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 1.00 AMPERES MAXIMUM BASE CURRENT, DC AND 3.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 165.0 DEG CELSIUS JUNCTION
MOUNTING FACILITY QUANTITY: 1
MOUNTING METHOD: UNTHREADED HOLE
OVERALL HEIGHT: 0.560 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
OVERALL LENGTH: 0.380 INCHES MINIMUM AND 0.420 INCHES MAXIMUM
OVERALL WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 2.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLE
