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5961-01-044-4120
20 Products
2N5565
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010444120
NSN
5961-01-044-4120
2N5565
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010444120
NSN
5961-01-044-4120
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 80131-RELEASE5901 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 5
Related Searches:
110-506-113
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010442669
NSN
5961-01-044-2669
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: PNP ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-106 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.240 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM ALL TR
Related Searches:
110-506-114
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010442670
NSN
5961-01-044-2670
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: -80.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL ALL TRANSISTOR
INTERNAL CONFIGURATION: JUNCTION CONTACT ALL TRANSISTOR
INTERNAL JUNCTION CONFIGURATION: PNP ALL TRANSISTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-106 ALL TRANSISTOR
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 125.0 DEG CELSIUS JUNCTION ALL TRANSISTOR
MOUNTING METHOD: TERMINAL ALL TRANSISTOR
OVERALL DIAMETER: 0.192 INCHES MINIMUM AND 0.222 INCHES MAXIMUM ALL TRANSISTOR
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.140 INCHES MAXIMUM ALL TRANSISTOR
POWER RATING PER CHARACTERISTIC: 200.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
TERMINAL CIRCLE DIAMETER: 0.095 INCHES MINIMUM AND 0.105 INCHES MAXIMUM ALL TR
Related Searches:
57-8011
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
57-8011
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
MFG
PSI-PERIPHERAL SUPPORT
Description
DESIGN CONTROL REFERENCE: PB10
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;25 AMP SINGLE-PHASE FULL WAVE BRIDGE;100 VOLTS;1.125 IN. SQUARE ;FOUR SOLDER TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
581-055
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
581-055
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
MFG
AMPEX DATA SYSTEMS CORPORATION
Description
DESIGN CONTROL REFERENCE: PB10
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;25 AMP SINGLE-PHASE FULL WAVE BRIDGE;100 VOLTS;1.125 IN. SQUARE ;FOUR SOLDER TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
655-119
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
655-119
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
MFG
MICRO USPD INC
Description
DESIGN CONTROL REFERENCE: PB10
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;25 AMP SINGLE-PHASE FULL WAVE BRIDGE;100 VOLTS;1.125 IN. SQUARE ;FOUR SOLDER TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
PB10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
PB10
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
MFG
ELECTRONIC DEVICES INC DBA E D I
Description
DESIGN CONTROL REFERENCE: PB10
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;25 AMP SINGLE-PHASE FULL WAVE BRIDGE;100 VOLTS;1.125 IN. SQUARE ;FOUR SOLDER TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
SDA103-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
SDA103-2
RECTIFIER,SEMICONDUCTOR DEVICE,UNITIZED
NSN, MFG P/N
5961010443382
NSN
5961-01-044-3382
MFG
SOLID STATE DEVICES INC.
Description
DESIGN CONTROL REFERENCE: PB10
MANUFACTURERS CODE: 83701
SPECIAL FEATURES: SILICON;25 AMP SINGLE-PHASE FULL WAVE BRIDGE;100 VOLTS;1.125 IN. SQUARE ;FOUR SOLDER TYPE TERMINALS
THE MANUFACTURERS DATA:
Related Searches:
0N217571
TRANSISTOR
NSN, MFG P/N
5961010443500
NSN
5961-01-044-3500
MFG
NATIONAL SECURITY AGENCY
Description
DESIGN CONTROL REFERENCE: 0N217571
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: SOURCE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 98230
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.370 INCHES NOMINAL
OVERALL LENGTH: 0.260 INCHES NOMINAL
OVERALL WIDTH: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 15.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL CIRCLE DIAMETER: 0.200 INCHES NOMINAL
TERMINAL LENGTH: 1.500 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 3 TAB, SOLDER LUG
TEST DATA DOCUMENT: 98230-0N217571 DRAWING
THE MANUFACTURERS DATA:
Related Searches:
147-70201-048
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
147-70201-048
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
MFG
SAGEM DEFENSE SECURITE - GROUPE SAFR AN
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE SINGLE TRANSISTOR
Related Searches:
4710031-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
4710031-00
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
MFG
EIP MICROWAVE INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE SINGLE TRANSISTOR
Related Searches:
4902-00-2140
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
4902-00-2140
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
MFG
WAVETEK U S INC DIV OF WAVETEK CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE SINGLE TRANSISTOR
Related Searches:
SD215DE
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
SD215DE
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010443765
NSN
5961-01-044-3765
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 1 TRANSISTOR AND 1 SEMICONDUCTOR DEVICE DIODE
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-72
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 4 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 25.0 MAXIMUM DRAIN TO SUBSTRATE VOLTAGE AND 25.0 MAXIMUM SOURCE TO SUBSTRATE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE SINGLE TRANSISTOR
Related Searches:
48-869643
TRANSISTOR
NSN, MFG P/N
5961010443803
NSN
5961-01-044-3803
MFG
MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC
Description
DESIGN CONTROL REFERENCE: 48-869643
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MANUFACTURERS CODE: 50012
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
M9643
TRANSISTOR
NSN, MFG P/N
5961010443803
NSN
5961-01-044-3803
MFG
FREESCALE SEMICONDUCTOR INC.
Description
DESIGN CONTROL REFERENCE: 48-869643
INCLOSURE MATERIAL: PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-92
MANUFACTURERS CODE: 50012
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.187 INCHES MAXIMUM
OVERALL WIDTH: 0.187 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
6089919-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010443806
NSN
5961-01-044-3806
MFG
LOCKHEED MARTIN CORPORATION DBA MISSION SYSTEMS & SENSORS
Description
CURRENT RATING PER CHARACTERISTIC: 20.60 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6089919 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
PS-37031
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010443806
NSN
5961-01-044-3806
MFG
TRW ELECTRONICS AND DEFENSE SECTOR RF DEVICES
Description
CURRENT RATING PER CHARACTERISTIC: 20.60 MILLIAMPERES MAXIMUM MAXIMUM REVERSE SURGE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.125 INCHES MAXIMUM
OVERALL LENGTH: 0.300 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 03640-6089919 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 6.4 MAXIMUM NOMINAL REGULATOR VOLTAGE
Related Searches:
11056
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010443807
NSN
5961-01-044-3807
MFG
TRIPLETT BLUFFTON CORPORATION DBA LFE INSTRUMENTS
Description
DESIGN CONTROL REFERENCE: 11056
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: GLASS
MANUFACTURERS CODE: 60741
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL LENGTH: 0.250 INCHES MAXIMUM
OVERALL WIDTH: 0.125 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.125 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
THE MANUFACTURERS DATA:
Related Searches:
ID100
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010444118
NSN
5961-01-044-4118
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
COMPONENT NAME AND QUANTITY: 2 SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.370 INCHES MAXIMUM
OVERALL LENGTH: 0.185 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 8 UNINSULATED WIRE LEAD
Related Searches:
99114733
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010444120
NSN
5961-01-044-4120
99114733
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010444120
NSN
5961-01-044-4120
MFG
THALES
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
COMPONENT NAME AND QUANTITY: 2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM DRAIN CURRENT AND 50.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT ALL TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: TO-71
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 500.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL: SILICON ALL TRANSISTOR
SPECIFICATION/STANDARD DATA: 80131-RELEASE5901 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 6 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 50.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 5
