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5961-01-062-7615
20 Products
334581
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627615
NSN
5961-01-062-7615
334581
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627615
NSN
5961-01-062-7615
MFG
FLUKE CORPORATION
Description
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.740 INCHES NOMINAL
OVERALL WIDTH: 0.040 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
Related Searches:
4660207
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010626925
NSN
5961-01-062-6925
MFG
GE AVIATION SYSTEMS LLC
Description
DESIGN CONTROL REFERENCE: 4660207
MANUFACTURERS CODE: 81039
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 155.0 DEG CELSIUS AMBIENT AIR
POWER RATING PER CHARACTERISTIC: 50.0 WATTS MAXIMUM TOTAL POWER DISSIPATION
THE MANUFACTURERS DATA:
Related Searches:
9D5481
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627261
NSN
5961-01-062-7261
MFG
CATERPILLAR INC. DBA CATERPILLAR DIV GOVERNMENTAL AND DEFENSE PRODUCTS
Description
SEMICONDUCTOR DEVICE,DIODE
Related Searches:
T235A126-1
TRANSISTOR
NSN, MFG P/N
5961010627460
NSN
5961-01-062-7460
MFG
TELEPHONICS CORPORATION DBA COMMUNICATIONS SYSTEMS DIVISION DIV COMMUNICATIONS SYSTEMS DIVISION
Description
CURRENT RATING PER CHARACTERISTIC: 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE: COLLECTOR
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: JUNCTION CONTACT
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 200.0 DEG CELSIUS AMBIENT AIR
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.2 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
SPECIAL FEATURES: JUNCTION PATTERN ARRANGEMENT: NPN
TERMINAL CIRCLE DIAMETER: 0.100 INCHES NOMINAL
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE O
Related Searches:
1TS30479
TRANSISTOR
NSN, MFG P/N
5961010627462
NSN
5961-01-062-7462
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM
Related Searches:
352-8509-012
TRANSISTOR
NSN, MFG P/N
5961010627462
NSN
5961-01-062-7462
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM
Related Searches:
FN3472
TRANSISTOR
NSN, MFG P/N
5961010627462
NSN
5961-01-062-7462
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM
Related Searches:
SF58013
TRANSISTOR
NSN, MFG P/N
5961010627462
NSN
5961-01-062-7462
MFG
NATIONAL SEMICONDUCTOR CORP
Description
(NON-CORE DATA) CHANNEL POLARITY AND CONTROL TYPE: N-CHANNEL JUNCTION TYPE
CURRENT RATING PER CHARACTERISTIC: 100.00 MILLIAMPERES MAXIMUM FORWARD GATE CURRENT
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III END ITEM IDENTIFICATION: AIRCRAFT, STRATOFORTRESS B-52
INCLOSURE MATERIAL: METAL
INTERNAL CONFIGURATION: FIELD EFFECT
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: T0-52
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.208 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.115 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 3 UNINSULATED WIRE LEAD
TEST DATA DOCUMENT: 13499-352-8509 DRAWING
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 25.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 25.0 MAXIMUM
Related Searches:
6082-1023
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010627466
NSN
5961-01-062-7466
MFG
GENRAD INC
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
MSQ100520
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010627466
NSN
5961-01-062-7466
MFG
SOLITRON DEVICES INC.
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
T235A126-2
SEMICONDUCTOR DEVICE SET
NSN, MFG P/N
5961010627466
NSN
5961-01-062-7466
MFG
INSTRUMENT SYSTEMS CORP
Description
COMPONENT FUNCTION RELATIONSHIP: MATCHED
COMPONENT NAME AND QUANTITY: 4 SEMICONDUCTOR DEVICE DIODE
INCLOSURE MATERIAL: METAL ALL SEMICONDUCTOR DEVICE DIODE
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION: DO-35 ALL SEMICONDUCTOR DEVICE DIODE
MOUNTING METHOD: TERMINAL ALL SEMICONDUCTOR DEVICE DIODE
OVERALL DIAMETER: 0.060 INCHES MINIMUM AND 0.090 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
OVERALL LENGTH: 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL LENGTH: 0.500 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE
Related Searches:
CR160
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627473
NSN
5961-01-062-7473
MFG
SILICONIX INCORPORATED D IV SILICONIX
Description
CURRENT RATING PER CHARACTERISTIC: 20.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC AND 50.00 MILLIAMPERES MAXIMUM REVERSE CURRENT, DC
FEATURES PROVIDED: HERMETICALLY SEALED CASE
INCLOSURE MATERIAL: METAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT: 150.0 DEG CELSIUS JUNCTION
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.230 INCHES MAXIMUM
OVERALL LENGTH: 0.210 INCHES MAXIMUM
POWER RATING PER CHARACTERISTIC: 1.25 WATTS MAXIMUM TOTAL POWER DISSIPATION
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 100.0 MAXIMUM FORWARD VOLTAGE, PEAK
Related Searches:
1N3595-1
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627474
NSN
5961-01-062-7474
MFG
MICROSEMI CORP. - MASSACHUSETTS DBA MICROSEMI-LAWRENCE DIV MICROSEMI CORPORATION
Description
CURRENT RATING PER CHARACTERISTIC: 0.005 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
1N458A
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627474
NSN
5961-01-062-7474
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CURRENT RATING PER CHARACTERISTIC: 0.005 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
288072
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627474
NSN
5961-01-062-7474
MFG
GOULD INSTRUMENT SYSTEMS INC
Description
CURRENT RATING PER CHARACTERISTIC: 0.005 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
756920
SEMICONDUCTOR DEVICE,DIODE
NSN, MFG P/N
5961010627474
NSN
5961-01-062-7474
MFG
NAVAL AIR SYSTEMS COMMAND
Description
CURRENT RATING PER CHARACTERISTIC: 0.005 MICROAMPERES MAXIMUM REVERSE CURRENT, DC
INCLOSURE MATERIAL: GLASS
MOUNTING METHOD: TERMINAL
OVERALL DIAMETER: 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM
OVERALL LENGTH: 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
SEMICONDUCTOR MATERIAL: SILICON
TERMINAL LENGTH: 1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY: 2 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC: 125.0 MAXIMUM REVERSE VOLTAGE, PEAK
Related Searches:
262-1397-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
262-1397-010
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: CERAMIC
Related Searches:
67025-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
67025-001
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
MFG
MICROPAC INDUSTRIES INC.
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: CERAMIC
Related Searches:
HRD101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
HRD101
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627549
NSN
5961-01-062-7549
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
FEATURES PROVIDED: HERMETICALLY SEALED CASE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE MATERIAL: CERAMIC
Related Searches:
DIS229
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627615
NSN
5961-01-062-7615
DIS229
SEMICONDUCTOR DEVICES,UNITIZED
NSN, MFG P/N
5961010627615
NSN
5961-01-062-7615
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
OVERALL HEIGHT: 0.120 INCHES NOMINAL
OVERALL LENGTH: 0.740 INCHES NOMINAL
OVERALL WIDTH: 0.040 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY: 14 UNINSULATED WIRE LEAD
